GTO 10A 500V Search Results

TL494 full bridge inverter

Abstract: dc motor speed control tl494 switching power supply TL494 WELDING TL494 full bridge IR2N6547 Speed control of dc motor using TL494 Ruttonsha make Power diode ratings ir in4007 full bridge TL494 946b
Contextual Info: APPLICATION NOTE 946B High Voltage, High Frequency Switching Using a Cascode Connection of HEXFET and Bipolar Transistor H E X FE T is the tra dem ark fo r In te rn a tio n a l R e c tifie r P ow er M O S FETs By S. CLEM EN TE, a . PELLY, R. R U T T O N S H A , B. TAYLOR

Contextual Info: FRM450D, FRM450R, FRM450H 10A, 500V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 10A, 500V, RDS on = 0.600Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: UniFETTM FDB12N50U tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

P channel MOSFET 1A

Abstract: 2E12 3E12 FRM450D FRM450H FRM450R Rad Hard in Fairchild for MOSFET 250V 10A TF 106
Contextual Info: FRM450D, FRM450R, FRM450H 10A, 500V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 10A, 500V, RDS on = 0.600Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: TM Ultra FRFET FDP12N50U / FDPF12N50UT tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

FQPF10N50CF

Abstract: FQPF Series mosfet 500v 10A mosfet 10a 500v FQP10N50CF
Contextual Info: TM FRFET FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Features Description • 10A, 500V, RDS on = 0.61 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FDPF*12n50ut

Abstract: FDPF12N50UT FDP12N50U FDP12N50
Contextual Info: TM Ultra FRFET FDP12N50U / FDPF12N50UT tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

FDPF*12n50ut

Abstract: fdpf12n50ut mosfet 10a 500v FDP12N50U
Contextual Info: TM Ultra FRFET FDP12N50U / FDPF12N50UT tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

FDB12N50U

Contextual Info: TM Ultra FRFET FDB12N50U tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

IRFP450A

Abstract: diode 400V 4A Power MOSFET 50V 10A diode MARKING A1 125 diode N-channel 500V mosfet
Contextual Info: IRFP450A 14A, 500V, 0.40 Ohm, N-Channel SMPS Power MOSFET Applications Features • Switch Mode Power Supplies SMPS • Low Gate Charge Requirement • Uninterruptable Power Supply • Improved Gate, Ruggedness • High Speed Power Switching Qg results Avalanche

Contextual Info: UniFETTM FDB12N50U tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

R3000C

Abstract: gto mitsubishi mitsubishi gto FGR3000CV-90DA GTO switching test mitsubishi sine wave inverter hs
Contextual Info: MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS FG R3000CV-90DA HIGH POWER INVERTER USE PRESS PACK TYPE FGR3000CV-90DA • Itq r m Repetitive controllable on-state current. . 3 0 0 0 A • It av A v e ra g e o n -s ta te c u r r e n t . . 9 0 0 A

GTO thyristor 4500V 4000A

Abstract: FAST SWITCHING THYRISTOR ST GTO thyristor driver 10A fast Gate Turn-off Thyristor GTO thyristor GTO gate drive unit mitsubishi fast thyristor 200A gate control circuits GTO 4.5kv MITSUBISHI GATE TURN-OFF THYRISTOR gto gto Gate Drive circuit
Contextual Info: IEEE Industry Applications Society Annual Meeting St. Louis, Missouri, October 12-16, 1998 A NEW GATE COMMUTATED TURN-OFF THYRISTOR AND COMPANION DIODE FOR HIGH POWER APPLICATIONS John F. Donlon*, Eric R. Motto*, M. Yamamoto*, Takahiko Iida* *Powerex, Incorporated, Youngwood, PA 15697 USA

FDPF*12n50ut

Abstract: FDPF12N50UT
Contextual Info: TM Ultra FRFET FDP12N50U / FDPF12N50UT tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

Contextual Info: UniFETTM FDP20N50F / FDPF20N50FT N-Channel MOSFET, FRFET 500V, 20A, 0.26Ω Features • RDS on = 0.22Ω ( Typ.)@ VGS = 10V, ID = 10A Description • Low gate charge ( Typ. 50nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

Contextual Info: UniFETTM FDP20N50F / FDPF20N50FT N-Channel MOSFET, FRFET 500V, 20A, 0.26Ω Features • RDS on = 0.22Ω ( Typ.)@ VGS = 10V, ID = 10A Description • Low gate charge ( Typ. 50nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

power mosfet 500v 20a circuit

Abstract: FDPF20N50F
Contextual Info: UniFETTM FDP20N50F / FDPF20N50F tm N-Channel MOSFET 500V, 20A, 0.26Ω Features Description • RDS on = 0.21Ω ( Typ.)@ VGS = 10V, ID = 10A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

power mosfet 500v 20a circuit

Abstract: FDP20N50F FDPF20N50FT
Contextual Info: UniFETTM FDP20N50F / FDPF20N50FT tm N-Channel MOSFET, FRFET 500V, 20A, 0.26Ω Features • RDS on = 0.22Ω ( Typ.)@ VGS = 10V, ID = 10A Description • Low gate charge ( Typ. 50nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

FDPF10N50FT

Abstract: fdpf10n50 FDP10N50F
Contextual Info: UniFETTM FDP10N50F / FDPF10N50FT N-Channel MOSFET 500V, 9A, 0.85Ω Features Description • RDS on = 0.71Ω ( Typ.) @ VGS = 10V, ID = 4.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

FDPF10N50FT

Contextual Info: UniFETTM FDP10N50F / FDPF10N50FT N-Channel MOSFET 500V, 9A, 0.85Ω Features Description • RDS on = 0.71Ω ( Typ.) @ VGS = 10V, ID = 4.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

FDPF20N50FT

Abstract: FAST DIODE FDP20N50F 20A p MOSFET mosfet 20A 500V
Contextual Info: UniFETTM FDP20N50F / FDPF20N50FT tm N-Channel MOSFET, FRFET 500V, 20A, 0.26Ω Features • RDS on = 0.22Ω ( Typ.)@ VGS = 10V, ID = 10A Description • Low gate charge ( Typ. 50nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,

FDA20N50

Contextual Info: UniFET TM FDA20N50 500V N-Channel MOSFET Features Description • 20A, 500V, RDS on = 0.24Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 45.6 nC)

mosfet 20A 500V

Abstract: 500V 100A thyristors N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V p channel mosfet 100v FDP20N50 power mosfet 500v 20a circuit
Contextual Info: UniFET TM FDP20N50 500V N-Channel MOSFET Features Description • 20A, 500V, RDS on = 0.23Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 45.6 nC)

"Power Diode" 500V 20A

Abstract: FDP20N50
Contextual Info: UniFET TM FDP20N50 500V N-Channel MOSFET Features Description • 20A, 500V, RDS on = 0.24Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 45.6 nC)