GV SC75 Search Results

b48 DIODE schottky

Abstract: SCC2691AC1 mosfet base inverter with chargers circuit 74HC1G14 30689 all n type mosfet switch ic for notebook cpu core dc to dc conversion 74AHC1G14 SOT-23 N40 DIODE PHILIPS MOSFET class ab A44 transistor
Contextual Info: NEW MULTIMARKET PRODUCTS QUARTERLY HIGHLIGHTS VOLUME 1 ISSUE 1 Semiconductors O C TO B E R 2 0 0 2 Discretes Logic Microcontrollers Standard Analog In this issue: 1. P89LPC932 First LPC900 device integrates 8 Kbytes Flash program memory 1. P89LPC932 2. BZA418A

907 TRANSISTOR smd

Abstract: PDTA144E catalog mosfet Transistor smd diode schottky code GW smd transistor bq smd diode GW at mega 48 microcontroller smd transistor y5 mosfet triggering circuit for inverter y4 smd transistor
Contextual Info: NEW MULTIMARKET PRODUCTS QUARTERLY HIGHLIGHTS VOLUME 2 ISSUE 4 Semiconductors NOVEMBER 2003 Discretes Logic Microcontrollers Standard Analog In this issue: 1. 74LVC1GX04 High performance crystal driver 2. BTA208X-1000B 1000 V high commutation, 3 quadrant triac

2SD2345

Abstract: SC-75
Contextual Info: Transistors 2SD2345 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 3 ■ Absolute Maximum Ratings Ta = 25°C Unit Collector-base voltage Emitter open VCBO 50 V Collector-emitter voltage (Base open)

transistor NEC 2SK2552B

Abstract: 2SK2552B SC-75 D17282
Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK2552B N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK2552B is suitable for converter of ECM. 0.3 +0.1 –0 General-purpose product.

2SD2345

Abstract: SC-75
Contextual Info: Transistors 2SD2345 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm M Di ain sc te on na tin nc ue e/ d 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 Emitter-base voltage Collector open Collector current Peak collector current

d1889

Abstract: transistor NEC 2SK2552C 2SK2552C SC-75
Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK2552C N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK2552C contains a diode and high resistivity 0.3 +0.1 –0 between its gates and sources, for achieving short stability

AMPLI

Abstract: Vbe 8 V 2SD2345 SC-75
Contextual Info: Transistors 2SD2345 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 3 ■ Absolute Maximum Ratings Ta = 25°C Rating Unit Collector-base voltage Emitter open VCBO 50 V Collector-emitter voltage (Base open)

Contextual Info: Transistors 2SD2345 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 Unit Collector-base voltage Emitter open VCBO 50 V Collector-emitter voltage (Base open) VCEO 40 V Emitter-base voltage (Collector open)

D1889

Abstract: 2SK2552C SC-75
Contextual Info: データ・シート 接合形電界効果トランジスタ Junction Field Effect Transistor 2SK2552C N チャネル接合形シリコン電界効果トランジスタ ECM インピーダンス変換用 外形図（単位：mm） 2SK2552C は，ゲート - ソース間にダイオードと高抵抗を内

2SK2552B

Abstract: SC-75 D17282
Contextual Info: データ・シート 接合形電界効果トランジスタ Junction Field Effect Transistor 2SK2552B N チャネル接合形シリコン電界効果トランジスタ ECM インピーダンス変換用 外形図（単位：mm） 2SK2552B は，ゲート - ソース間にダイオードと高抵抗を内

2SK2552B

Abstract: SC-75
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SK2552C

Abstract: SC-75
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

PMEG2020EA

Abstract: smps repair circuit TEA1620P 40V NPN embedded package TEA1622 pecl clock so8 30v 3a schottky barrier type rectifiers TEA1623P smps repair smd transistor bq
Contextual Info: New MultiMarket Products Quarterly highlights Semiconductors VOLUME 3 • ISSUE 2 M AY 2 0 0 4 ■ In this issue: Welcome to the latest issue of Philips’ New MultiMarket Products – Quarterly highlights. P 1 PCK12429 25 - 400 MHz differential PECL clock generator

2SD2240

Abstract: 2SD2240A SC-75 2SD224
Contextual Info: Transistors 2SD2240, 2SD2240A Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.2+0.1 –0.05 0.15+0.1 –0.05 3 1˚ • Features ■ Absolute Maximum Ratings Ta = 25°C VCBO 2SD2240A Unit 150

2SB1463

Abstract: 2SD2240 SC-75 SJC00089BED
Contextual Info: Transistors 2SB1463 Silicon PNP epitaxial planar type Unit: mm For high breakdown voltage low-frequency amplification Complementary to 2SD2240 0.2+0.1 –0.05 0.15+0.1 –0.05 1˚ 3 2 0.3 1 (0.5) (0.5) 1.0±0.1 1.6±0.1 (0.4) • High collector-emitter voltage (Base open) VCEO

SC-75

Abstract: 2SB1463 2SD2240
Contextual Info: Transistors 2SB1463 Silicon PNP epitaxial planar type Unit: mm For high breakdown voltage low-frequency amplification Complementary to 2SD2240 0.2+0.1 –0.05 0.15+0.1 –0.05 • High collector-emitter voltage Base open VCEO • Low noise voltage NV • SS-Mini type package, allowing downsizing of the equipment and

2SB1463

Abstract: 2SD2240 SC-75 SSMini3-G1
Contextual Info: Transistors 2SB1463 Silicon PNP epitaxial planar type Unit: mm For high breakdown voltage low-frequency amplification Complementary to 2SD2240 0.2+0.1 –0.05 0.15+0.1 –0.05 Collector-emitter voltage Base open Emitter-base voltage (Collector open) Collector current

2SD2240

Abstract: 2SD2240A SC-75
Contextual Info: Transistors 2SD2240, 2SD2240A Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.2+0.1 –0.05 0.15+0.1 –0.05 3 • Absolute Maximum Ratings Ta = 25°C Unit 150 V VCBO 2SD2240A 185 150 V Collector-emitter voltage 2SD2240

2SD2240

Abstract: 2SD2240A SC-75
Contextual Info: Transistors 2SD2240, 2SD2240A Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Unit: mm 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 0.2+0.1 –0.05 • Features 2SD2240 Collector-base voltage Emitter open

Contextual Info: Transistors 2SB1463 Silicon PNP epitaxial planar type Unit: mm For high breakdown voltage low-frequency amplification Complementary to 2SD2240 0.2+0.1 –0.05 0.15+0.1 –0.05 0.4 5˚ Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO

2SK2552B

Abstract: SC-75
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社