A03 transistor
Abstract: Q62702F-1610 BFY193 a03 dbm microwave transistor bfy193 24 marking code transistor K 193 transistor
Text: HiRel NPN Silicon RF Transistor BFY 193 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers up to 2 GHz. ¥ For linear broadband amplifiers ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.3 dB at 2 GHz
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Q62702F1610
Q62702F1701
BFY193
de/semiconductor/products/35/35
de/semiconductor/products/35/353
GXM05552
A03 transistor
Q62702F-1610
a03 dbm
microwave transistor bfy193
24 marking code transistor
K 193 transistor
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XY 805 ic
Abstract: microwave transducer marking A04 BFY180 on semiconductor marking code A04
Text: HiRel NPN Silicon RF Transistor BFY 180 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low power amplifiers at collector currents from 0.2 to 2.5 mA ¥ Hermetically sealed microwave package ¥ fT = 6.5 GHz, F = 2.6 dB at 2 GHz ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5611/006
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Q97301013
Q97111419
Q97111419
BFY180
de/semiconductor/products/35/35
de/semiconductor/products/35/353
GXM05552
XY 805 ic
microwave transducer
marking A04
on semiconductor marking code A04
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transistor "micro-x" "marking" 3
Abstract: marking K "micro x" BFY420
Text: BFY420 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For High Gain Low Noise Amplifiers • For Oscillators up to 10 GHz • Noise Figure F = 1.1 dB at 1.8 GHz Outstanding G ms = 21 dB at 1.8 GHz • Hermetically sealed microwave package
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BFY420
Transistor25
transistor "micro-x" "marking" 3
marking K "micro x"
BFY420
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GaAs Amplifier Micro-X Marking 865
Abstract: Micro-X Marking 865 transistor GaAS marking 576 CFY67 CFY67-06 CFY67-08 CFY67-08P CFY67-10 CFY67-10P 09 67 025 4715
Text: CFY67. HiRel K-Band GaAs Super Low Noise HEMT • HiRel Discrete and Microwave Semiconductor • Pseudo- morphic AlGaAs/lnGaAs/ GaAs HEMT • For professional super low-noise amplifiers • For frequenzcies from 500 MHz to >20 Ghz • Hermetically sealed micorowave package
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CFY67.
CFY67-06
CFY67-08
CFY67-08P
CFY67-10
CFY67-10P
GaAs Amplifier Micro-X Marking 865
Micro-X Marking 865
transistor GaAS marking 576
CFY67
CFY67-06
CFY67-08
CFY67-08P
CFY67-10
CFY67-10P
09 67 025 4715
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BFY640-04
Abstract: bfy640 BFY640 ES
Text: BFY640 NPN Silicon Germanium RF Transistor Preliminary data • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Outstanding noise figure F = 0.8 dB at 1.8 GHz Outstanding noise figure F = 1 dB at 6 GHZ
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BFY640
BFY640-04
bfy640
BFY640 ES
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A03 transistor
Abstract: BFY280
Text: HiRel NPN Silicon RF Transistor BFY 280 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, low power amplifiers at collector currents from 0.2 mA to 8 mA ¥ Hermetically sealed microwave package ¥ fT = 7.2 GHz, F = 2.5 dB at 2 GHz ¥
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Q97302026
Q97111414
BFY280
de/semiconductor/products/35/35
de/semiconductor/products/35/353
GXM05552
A03 transistor
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marking K "micro x"
Abstract: MICROWAVE TRANSITOR transistor "micro-x" "marking" 3 GHZ micro-X Package BFY450
Text: BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Medium Power Amplifiers • Compression Point P-1dB = 19 dbm 1.8 GHz Max. available gain Gma = 16 dB at 1.8 GHz • Hermetically sealed microwave package • Transitor frequency fT = 20 GHz
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BFY450
Transistor25
marking K "micro x"
MICROWAVE TRANSITOR
transistor "micro-x" "marking" 3
GHZ micro-X Package
BFY450
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BFY196
Abstract: No abstract text available
Text: BFY196 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • Hermetically sealed microwave package • fT = 6,5 GHz F = 3 dB at 2 GHz • esa Space Qualification Expected 1998
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BFY196
BFY196
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BFY181
Abstract: No abstract text available
Text: BFY181. HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA • Hermetically sealed microwave package • fT = 8 GHz F = 2.2 dB at 2 GHz
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BFY181.
BFY181
BFY181
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BFY193
Abstract: No abstract text available
Text: BFY193 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • Hermetically sealed microwave package • fT = 8 GHz F = 2.3 dB at 2 GHz • esa Space Qualified
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BFY193
BFY193
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Untitled
Abstract: No abstract text available
Text: BFY640 NPN Silicon Germanium RF Transistor Preliminary data • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Outstanding noise figure F = 0.8 dB at 1.8 GHz Outstanding noise figure F = 1 dB at 6 GHZ
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BFY640
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marking A04
Abstract: BFY181 p 181 V Q62702F1715
Text: HiRel NPN Silicon RF Transistor BFY 181 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.2 dB at 2 GHz
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Q62702F1607
Q62702F1715
BFY181
de/semiconductor/products/35/35
de/semiconductor/products/35/353
GXM05552
marking A04
p 181 V
Q62702F1715
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on semiconductor marking code A04
Abstract: marking A04 C BFY182
Text: HiRel NPN Silicon RF Transistor BFY 182 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.4 dB at 2 GHz
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Q62702F1608
Q62702F1714
BFY182
de/semiconductor/products/35/35
de/semiconductor/products/35/353
GXM05552
on semiconductor marking code A04
marking A04 C
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A03 transistor
Abstract: microwave transducer BFY196 BFY 36 transistor
Text: HiRel NPN Silicon RF Transistor BFY 196 Features ¥ ¥ ¥ ¥ ¥ ¥ HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz. For linear broadband amplifiers Hermetically sealed microwave package fT = 6.5 GHz, F = 3 dB at 2 GHz
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Q62702F1684
BFY196
de/semiconductor/products/35/35
de/semiconductor/products/35/353
GXM05552
A03 transistor
microwave transducer
BFY 36 transistor
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BFY182
Abstract: No abstract text available
Text: BFY182 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • Hermetically sealed microwave package • fT = 8GHz F = 2.4dB at 2GHz • esa Space Qualified
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BFY182
BFY182
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35 micro-X 20ghz gaas
Abstract: marking K "micro x" transistor GaAS marking 576 CFY25 CFY25-20 CFY25-20P CFY25-23 CFY25-23P CFY25-P 133 marking Micro-X
Text: CFY25. HiRel X-Band GaAs General Purpose MESFET • HiRel discrete and Microwave semiconductor • For professional pre- and driver- amplifiers • For frequencies from 500MHz to 20GHz • Hermetically sealed microwave package • Low noise figure, high gain, moderate power
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CFY25.
500MHz
20GHz
CFY25-20
CFY25-20P
CFY25-23
CFY25-23P
35 micro-X 20ghz gaas
marking K "micro x"
transistor GaAS marking 576
CFY25
CFY25-20
CFY25-20P
CFY25-23
CFY25-23P
CFY25-P
133 marking Micro-X
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A03 transistor
Abstract: BFy 90 transistor microwave transducer BFY183 marking code microwave
Text: HiRel NPN Silicon RF Transistor BFY 183 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.3 dB at 2 GHz
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Q62702F1609
Q62702F1713
BFY183
de/semiconductor/products/35/35
de/semiconductor/products/35/353
GXM05552
A03 transistor
BFy 90 transistor
microwave transducer
marking code microwave
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GaAs Amplifier Micro-X Marking k
Abstract: marking K "micro x" CGY41 GaAs Amplifier Micro-X
Text: CGY41 HiRel L- and S-Band GaAs General Purpose Amplifier • HiRel Discrete and Microwave Semiconductor • Single- stage monolithic mircrowave IC MMIC- amplifier • Application range: 100 MHZ to 3 GHz • Gain: 9.5 dB typ. @ 1.8 GHz • Low noise figure: 2.7 dB typ. @ 1.8 GHz
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CGY41
GaAs Amplifier Micro-X Marking k
marking K "micro x"
CGY41
GaAs Amplifier Micro-X
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Untitled
Abstract: No abstract text available
Text: SIEMENS HiRel NPN Silicon RF Transistor BFY183 Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA • Hermetically sealed microwave package • f-r = 8 GHz, F = 2.3 dB at 2 GHz
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OCR Scan
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PDF
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BFY183
Q62702F1609
Q62702F1713
BFY183
de/semiconductor/products/35/35
de/semiconductor/products/35/353
GXM05552
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Untitled
Abstract: No abstract text available
Text: SIEMENS HiRel NPN Silicon RF Transistor BFY182 Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA • Hermetically sealed microwave package • f T = 8 GHz, F = 2.4 dB at 2 GHz
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OCR Scan
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PDF
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BFY182
Q62702F1608
Q62702F1714
BFY182
de/semiconductor/products/35/35
de/semiconductor/products/35/353
FY182
GXM05552
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Untitled
Abstract: No abstract text available
Text: SIEMENS HiRel NPN Silicon RF Transistor BFY180 Features • HiRel Discrete and Microwave Semiconductor • For low power amplifiers at collector currents from 0.2 to 2.5 mA • Hermetically sealed microwave package • f T = 6.5 GHz, F = 2.6 dB at 2 GHz •
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OCR Scan
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PDF
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BFY180
Q97301013
Q97111419
BFY180
de/semiconductor/products/35/35
de/semiconductor/products/35/353
GXM05552
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Untitled
Abstract: No abstract text available
Text: SIEMENS HiRel NPN Silicon RF Transistor BFY 193 Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers up to 2 GHz. • For linear broadband amplifiers • Hermetically sealed microwave package • f T = 8 GHz, F = 2.3 dB at 2 GHz
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OCR Scan
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PDF
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Q62702F1610
Q62702F1701
BFY193
de/semiconductor/products/35/35
de/semiconductor/products/35/353
BFY193
GXM05552
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Untitled
Abstract: No abstract text available
Text: SIEMENS HiRel NPN Silicon RF Transistor BFY 280 Features • HiRel Discrete and Microwave Semiconductor • For low noise, low power amplifiers at collector currents from 0.2 mA to 8 mA • Hermetically sealed microwave package • f T = 7.2 GHz, F = 2.5 dB at 2 GHz
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OCR Scan
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PDF
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Q97302026
Q97111414
BFY280
de/semiconductor/products/35/35
de/semiconductor/products/35/353
BFY280
GXM05552
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A21E
Abstract: No abstract text available
Text: SIEMENS HiRel NPN Silicon RF Transistor BFY181 Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • Hermetically sealed microwave package • /- r = 8 GHz, F = 2.2 dB at 2 GHz
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OCR Scan
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PDF
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BFY181
Q62702F1607
Q62702F1715
BFY181
de/semiconductor/products/35/35
de/semiconductor/products/35/353
GXM05552
A21E
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