Q62702F1715 Search Results

Q62702F1715 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BFY181 Contextual Info: BFY181 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. • Hermetically sealed microwave package • fT= 8 GHz F = 2.2 dB at 2 GHz	Original	BFY181 Q62702F1607 QS9000 BFY181	PDF
Contextual Info: BFY181 HiRel NPN Silicon RF Transistor • • • • • HiRel Discrete and Microwave Semiconductor 4 3 1 2 For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.2 dB at 2 GHz	Original	BFY181 BFY181 Q62702F1607 Q62702in QS9000	PDF
marking A04 Abstract: BFY181 p 181 V Q62702F1715 Contextual Info: HiRel NPN Silicon RF Transistor BFY 181 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.2 dB at 2 GHz	Original	Q62702F1607 Q62702F1715 BFY181 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 marking A04 p 181 V Q62702F1715	PDF
A21E Contextual Info: SIEMENS HiRel NPN Silicon RF Transistor BFY181 Features • HiRel Discrete and Microwave Semiconductor • For low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA • Hermetically sealed microwave package • /- r = 8 GHz, F = 2.2 dB at 2 GHz	OCR Scan	BFY181 Q62702F1607 Q62702F1715 BFY181 de/semiconductor/products/35/35 de/semiconductor/products/35/353 GXM05552 A21E	PDF