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STMicroelectronics STGY40NC60VD IGBT 600V 80A MAX247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STGY40NC60VD	Tube	443		1	1 $7.28 10 $7.28 100 $4.19 1000 $3.02 10000 $3.02	Buy Now
Avnet Americas	STGY40NC60VD	Tube		14 Weeks	600	1 - 10 - 100 - 1000 $3.06 10000 $2.90	Buy Now
Mouser Electronics	STGY40NC60VD		660			1 $6.47 10 $5.43 100 $4.39 1000 $3.90 10000 $3.34	Buy Now
Newark	STGY40NC60VD	Bulk			600	1 - 10 - 100 - 1000 - 10000 -	Buy Now
RS	STGY40NC60VD	Bulk			5	1 - 10 $5.27 100 $4.33 1000 $4.33 10000 $4.33	Get Quote

STMicroelectronics	STGY40NC60VD		664		1	1 $6.34 10 $5.32 100 $4.30 1000 $4.30 10000 $4.30	Buy Now
TME	STGY40NC60VD				1	1 $6.28 10 $5.23 100 $5.00 1000 $4.34 10000 $3.73	Get Quote
Avnet Silica	STGY40NC60VD		600	15 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STGY40NC60VD			15 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi MGY40N60D Trans IGBT Chip N-CH 600V 66A 3-Pin(3+Tab) TO-264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	MGY40N60D		1,588		1	1 - 10 - 100 $4.23 1000 $3.78 10000 $3.56	Buy Now
onsemi MGY40N60 Insulated Gate Bipolar Transistor, 66A, 600V, N-Channel, TO-264AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	MGY40N60		12,095		1	1 - 10 - 100 $3.95 1000 $3.54 10000 $3.33	Buy Now
Motorola Semiconductor Products MGY40N60 N-CHANNEL ENHANCEMENT-MODE SILICON GATE INSULATED GATE BIPOLAR TRANSISTOR Insulated Gate Bipolar Transistor, 66A I(C), 600V V(BR)CES, N-Channel, TO-264AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	MGY40N60		259			1 - 10 - 100 - 1000 - 10000 -	Get Quote
STMicroelectronics GY40NC60VD Electronic Component
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	GY40NC60VD		30			1 - 10 - 100 - 1000 - 10000 -	Get Quote

GY40N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
GY40N60D Abstract: Y40N60D GY40N60 IC IGBT fast GY40N Contextual Info: MOTOROLA O rder this docum ent by M G Y40N60D /D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M GY40N60D Insulated G ate Bipolar Transistor with A nti-P arallel Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T O -2 6 4	OCR Scan	Y40N60D GY40N60D GY40N60 IC IGBT fast GY40N	PDF
GY40NC60VD Abstract: GY40NC60V IC 2030 schematic diagram 2030 ic circuit diagram GY40N STGY40NC60VD gy40NC60 Contextual Info: GY40NC60VD N-CHANNEL 50A - 600V - Max247 Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE VCES VCE sat (Max) @25°C IC @100°C GY40NC60VD 600 V < 2.5 V 50 A • ■ ■ ■ ■ ■ HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION UP TO 50	Original	STGY40NC60VD Max247 GY40NC60VD GY40NC60V IC 2030 schematic diagram 2030 ic circuit diagram GY40N STGY40NC60VD gy40NC60	PDF
GY40NC60VD Abstract: STGY40NC60VD Welding topologies MAX247 GY40N Contextual Info: GY40NC60VD N-CHANNEL 50A - 600V Max247 Hyper Fast PowerMESH IGBT TYPE VCES VCE sat (Max)@25°C IC(#) @100°C GY40NC60VD 600 V < 2.5 V 50 A • ■ ■ ■ ■ ■ HIGH INPUT IMPEDANCE OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY	Original	STGY40NC60VD Max247 Max247 GY40NC60VD STGY40NC60VD Welding topologies GY40N	PDF
GY40NC60VD Abstract: gy40NC60 GY40N STGY40NC60VD IC 2030 schematic diagram ic MARKING QG Contextual Info: GY40NC60VD N-CHANNEL 50A - 600V - Max247 Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE VCES VCE sat (Max) @25°C IC @100°C GY40NC60VD 600 V < 2.5 V 50 A • ■ ■ ■ ■ ■ ■ HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION UP TO	Original	STGY40NC60VD Max247 GY40NC60VD gy40NC60 GY40N STGY40NC60VD IC 2030 schematic diagram ic MARKING QG	PDF
GY40NC60VD Abstract: 2030 ic circuit diagram IC 2030 schematic diagram Contextual Info: GY40NC60VD N-CHANNEL 50A - 600V Max247 Hyper Fast PowerMESH IGBT PRELIMINARY DATA TYPE VCES VCE sat (Max)@25°C IC(#) @100°C GY40NC60VD 600 V < 2.5 V 50 A • ■ ■ ■ ■ ■ ■ OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY	Original	STGY40NC60VD Max247 Max247 GY40NC60VD 2030 ic circuit diagram IC 2030 schematic diagram	PDF
GY40N Abstract: gy40NC60 GY40NC60VD GY40NC60V 600V 20A 50KHz STGY40NC60VD JESD97 IC 2030 schematic diagram Contextual Info: GY40NC60VD N-channel 600V - 50A - Max247 Very fast PowerMESH IGBT Features Type VCES GY40NC60VD 600V IC VCE sat (max)@25°C @100°C < 2.5V 50A • High current capability ■ High frequency operation up to 50kHz ■ Low CRES / CIES ratio (no cross-conduction	Original	STGY40NC60VD Max247 50kHz GY40N gy40NC60 GY40NC60VD GY40NC60V 600V 20A 50KHz STGY40NC60VD JESD97 IC 2030 schematic diagram	PDF
Contextual Info: GY40NC60VD N-CHANNEL 50A - 600V Max247 Hyper Fast PowerMESH IGBT TYPE VCES VCE sat (Max)@25°C IC @100°C GY40NC60VD 600 V < 2.5 V 50 A • ■ ■ ■ ■ ■ HIGH INPUT IMPEDANCE OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY	Original	STGY40NC60VD Max247	PDF
Contextual Info: GY40NC60VD N-CHANNEL 50A - 600V Max247 Hyper Fast PowerMESH IGBT PRELIMINARY DATA TYPE VCES VCE sat (Max)@25°C IC(#) @100°C GY40NC60VD 600 V < 2.5 V 50 A • ■ ■ ■ ■ ■ ■ OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY	Original	STGY40NC60VD Max247	PDF
GY40N60 Abstract: motorola 6810 GY40N Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet GY40N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T h is In su la te d G a te B ip o la r T ra n sisto r IG B T u ses an a dva n ce d	OCR Scan	GY40N60 GY40N60 motorola 6810 GY40N	PDF
Contextual Info: GY40NC60VD N-CHANNEL 50A - 600V Max247 Hyper Fast PowerMESH IGBT TYPE VCES VCE sat (Max)@25°C IC(#) @100°C GY40NC60VD 600 V < 2.5 V 50 A • ■ ■ ■ ■ ■ HIGH INPUT IMPEDANCE OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY	Original	STGY40NC60VD Max247	PDF

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