H BRIDGE 300V 30A Search Results

Thyristor pbh206 2A

Abstract: PBH203 PBH206 PBH208
Contextual Info: THYRISTOR MODULE 20A / 300V to 800V PBH203 PBH206 PBH208 OUTLINE DRAWING FEATURES * Isolated Base * Thyristors and Diodes H-Bridge Circuit * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS φ * Rectified For General Use Maximum Ratings

pbf206

Abstract: PBF208
Contextual Info: THYRISTOR MODULE 20A / 300V to 800V PBF203 PBF206 PBF208 OUTLINE DRAWING FEATURES * Isolated Base * Thyristors and Diodes H-Bridge Circuit With Free-Wheeling Diode * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS φ * Rectified For General Use

Contextual Info: APT30F60J 600V, 30A, 0.16Ω Max, trr ≤270ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

APT30F60J

Abstract: MIC4452 300V dc dc boost converter
Contextual Info: APT30F60J 600V, 30A, 0.16Ω Max, trr ≤270ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

Contextual Info: APT30DL60HJ ISOTOP Fast Diode Full Bridge Power Module VRRM = 600V IF = 30A @ Tc = 80°C Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features • • • • • • • • +

H bridge 300v 30a

Abstract: 7MBR30NE060 igbt 300V 30A
Contextual Info: 7M B R 30N E 060 IGBT Modules IGBT MODULE 600V/30A/PIM • Features ■High Speed Switching • Voltage Drive • Low Inductance M odule S tructure ■Converter Diode Bridge Dynamic Brake Circuit ■ Applications ■Inverter for Motor Drive ■AC and DC Servo D rive A m p lifie r

Contextual Info: 2 2 3 0 7 ^ 2 0 0 0 4 2 1 1 353 Ratings and characteristics of Fuji IGBT 1 M B 3 O — O 1. Outline Drawing 6 O 2. Equivalent circuit C:Collector Q 6:Gate O Ò E:Eraitter C O N N E C T IO N li 4- 41 @ © GATE © CO LLEC TO R ® EM IT T E R E1AJ : SC-65

MHPM7A30A60B

Abstract: H bridge 300v 30a Dimensioning Inverter TI1250 z12g lgbt
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MHPM7A30A60BID DATA Hybrid Power Module I= In&grated Power Stage for 3.0 hp Motor Drives This module integrates a 3–phase input rectifier bridge, 3–phase output inverter, brake transistor/diode, current sense resistor and temperature sensor

H bridge 300v 30a

Contextual Info: VUE 75-06NO7 ECO-PAC TM Three Phase Rectifier Bridge IdAV = 86 A VRRM = 600 V trr = 35 ns with Fast Recovery Epitaxial Diodes FRED Preliminary Data VRSM VRRM V V 600 600 D Typ VUE 75-06NO7 A H N K Symbol Conditions IdAV ① IdAVM TC = 100°C, module IFSM

rectifier bridge 300v 30a

Abstract: 05464 VUE35-06 H bridge 300v 30a
Contextual Info: VUE 35-06NO7 ECO-PAC TM Three Phase Rectifier Bridge IdAV = 56 A VRRM = 600 V trr = 35 ns with Fast Recovery Epitaxial Diodes FRED VRSM VRRM V V 600 600 D Typ VUE 35-06NO7 A H N K Symbol Conditions IdAV ① IdAVM TC = 85°C, module IFSM TVJ = 45°C VR = 0

Contextual Info: VUE 75-06NO7 ECO-PAC TM Three Phase Rectifier Bridge IdAV = 86 A VRRM = 600 V trr = 35 ns with Fast Recovery Epitaxial Diodes FRED VRSM VRRM V V 600 600 D Typ VUE 75-06NO7 A H N K Symbol Conditions IdAV ① IdAVM TC = 100°C, module IFSM TVJ = 45°C VR = 0

Contextual Info: VUE 35-06NO7 ECO-PAC TM Three Phase Rectifier Bridge IdAV = 56 A VRRM = 600 V trr = 35 ns with Fast Recovery Epitaxial Diodes FRED Preliminary Data VRSM VRRM V V 600 600 D Typ VUE 35-06NO7 A H N K Symbol Conditions IdAV ① IdAVM TC = 85°C, module IFSM

H bridge 300v 30a

Abstract: rectifier bridge 300v 30a 75-06NO7
Contextual Info: VUE 75-06NO7 ECO-PAC TM Three Phase Rectifier Bridge IdAV = 86 A VRRM = 600 V trr = 35 ns with Fast Recovery Epitaxial Diodes FRED VRSM VRRM V V 600 600 D Typ VUE 75-06NO7 A H N K Symbol Conditions IdAV ① IdAVM TC = 100°C, module IFSM TVJ = 45°C VR = 0

Contextual Info: APT30DL60HJ ISOTOP Fast Diode Full Bridge Power Module VRRM = 600V IF = 30A @ Tc = 80°C Application •    Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features + ~        

47-6 k5 diode

Abstract: Motorola 022 6934 MHPM7B30A60B rectifier bridge 300v 30a
Contextual Info: MAXIMUM, DEVICE RATINGS continued (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit IGBT Reverse Voltage VCES 600 v Gate-Emitter Voltage. VGES +20 v [c 30 A BRAKE CIRCUIT - \ , : - - Continuous IGBT Collector Current Peak IGBT Collector Current (PW = 1.0 ms) (2)

NTC 5R1

Abstract: IRF32N50 smd diode 600v 1a
Contextual Info: AC Motor Drive Table of Contents AC INPUT, Diode Bridges. 3 AC INPUT, Power Factor

BUF420AI

Abstract: BUF420M
Contextual Info: SGS-THOMSON B U F 4 2 0 / 4 2 0 I/4 2 0 M B U F 4 2 0 A /4 2 0 A I/4 2 0 A M FASTSWITCH EASY-TO-DRIVE ETD NPN TRANSISTORS P R E LIM IN A R Y DATA • HIGH SW ITCHING SPEED NPN POWER TRANSISTORS ■ EASY TO DRIVE ■ HIGH VOLTAGE FOR OFF-LINE APPLICA­ TIONS

Contextual Info: APT30DC60HJ ISOTOP SiC Diode Full Bridge Power Module VRRM = 600V IC = 30A @ Tc = 100°C Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features • SiC Schottky Diode - Zero reverse recovery

STW30NM60D

Abstract: W30NM60 ZVS phase-shift converters W30NM60D
Contextual Info: STW30NM60D N-CHANNEL 600V - 0.125Ω - 30A TO-247 Fast Diode MDmesh Power MOSFET ADVANCED DATA TYPE STW30NM60D VDSS RDS on Rds(on)*Qg 600 V < 0.135 Ω 9.12 Ω*nC ID 30 A TYPICAL RDS(on) = 0.125Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY

ZVS phase-shift converters

Abstract: STW30NM60D W30NM60 W30NM60D
Contextual Info: STW30NM60D N-CHANNEL 600V - 0.125Ω - 30A TO-247 Fast Diode MDmesh Power MOSFET ADVANCED DATA TYPE STW30NM60D VDSS RDS on Rds(on)*Qg 600 V < 0.135 Ω 9.12 Ω*nC ID 30 A TYPICAL RDS(on) = 0.125Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY

Contextual Info: FII 30-06D IC25 = 30 A VCES = 600 V VCE sat typ. = 1.9 V IGBT phaseleg in ISOPLUS i4-PAC 3 5 4 E72873 1 2 Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 47 Ω; TVJ = 125°C

CM100TL-12NF

Contextual Info: CM100TL-12NF Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Six IGBTMOD NF-Series Module 100 Amperes/600 Volts A D E F G K H J M J N 8 1 1 1 1 B C CN UP B U V N W Q U L T K K S V WP AB AA P K VP R K R P K R K

3006d

Abstract: H bridge 300v 30a
Contextual Info: FII 30-06D IGBT phaseleg IC25 = 30 A VCES = 600 V VCE sat typ. = 1.9 V in ISOPLUS i4-PAC 3 5 4 E72873 1 2 Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 47 Ω; TVJ = 125°C

Contextual Info: CM75TL-12NF Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Six IGBTMOD NF-Series Module 75 Amperes/600 Volts A D E F G K H J M J N 8 1 1 1 1 B C CN UP B U V N W Q U L T K K S V WP AB AA P K VP R K R P K R K X