H-EE 32 Search Results

Contextual Info: DATA S H EE T MOS FIELD EFFECT TRANSISTOR ¿

EE 1605

Abstract: EE CORES EE-25 transformer EE 25 transformer 42x15 Transformer EE-25 EE 1605 inductor 34x9 ee power transformer 80X20
Contextual Info: EE Cores EE Cores 2 A Shapes Driver transformer. Power Inductor. Power transformer. Wideband transformer. G z z z z H Application D Dimensions and Characteristics EE 13x3 13x6 13x6.1 16x4.9 19x5 19x7 19x9 20x5 A 9.0±0.4 12.7±0.25 12.7±0.25 13.0±0.45 16.0±0.5

Contextual Info: Aluminum Electrolytic Capacitors/ EE Radial Lead Type Series: EE Type: A • Features ● High ripple current at high frequency : 40 % higher than ED Series ● Endurance: 105 °C 8000 h to 10000 h ● RoHS directive compliant ■ Specifications Category Temp. Range

EEUEe2W100

Abstract: EEUEE2C151S EEUEE2C101S EEUEE2W470S EEUEE2W470 eeuee2w150 eeu-ee2w470s EEUEE2V470 EEUEE2D101 EEUEE2C101
Contextual Info: Aluminum Electrolytic Capacitors/ EE Radial Lead Type Series: EE Type: A • Features ● High ripple current at high frequency : 40 % higher than ED Series ● Endurance: 105 °C 8000 h to 10000 h ● RoHS directive compliant ■ Specifications Category Temp. Range

PALCE29M16

Abstract: PALCE29M16H PALCE29M16H-25 PD3024
Contextual Info: FINAL COM’L: H-25 PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic ■ Register/Latch Preload permits full logic replacement; Electrically Erasable EE technology allows reprogrammability

Contextual Info: Devices 20-Pin 14H4/-2 12H6/-2 10H8/-2 16H2/-2 16C1/-2 16L2/-2 16L8/B/B-2/B-4 A/A-2/A-4 - AND LOGIC ARRAY E - E =£> = 0 Ed = t> =T> i > ID H > ID =0 n > ID e E E - - - AND - ARRAY - E - I H > ID ID =E> =E> 3 ID =E> 3 =E> 3 = T > ID 3 "I EE EEEE EE EE r t

Contextual Info: COM’L: H-25 PALCE29MA16H-25 24-Pin EE CMOS Programmable Array Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic

PALCE29M16H/4

Abstract: PALCE29M16 PALCE29M16H PALCE29M16H-25 PD3024
Contextual Info: FINAL COM’L: H-25 Lattice/Vantis PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic ■ Register/Latch Preload permits full logic replacement; Electrically Erasable EE technology allows reprogrammability

PALCE29M16

Abstract: PALCE29M16H PALCE29M16H-25 PD3024
Contextual Info: FINAL COM’L: H-25 Advanced Micro Devices PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic ■ Register/Latch Preload permits full logic replacement; Electrically Erasable EE technology allows reprogrammability

pt 2358

Abstract: PALCE29MA16 PALCE29MA16H-25 PD3024
Contextual Info: FINAL COM’L: H-25 Lattice/Vantis PALCE29MA16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic ■ ■ ■ ■ ■ Register/Latch Preload permits full logic replacement; Electrically Erasable EE

pt 2358

Contextual Info: FINAL COM’L: H-25 PALCE29MA16H-25 24-Pin EE CMOS Programmable Array Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability ■ 16 bidirectional user-programmable I/O logic

pt 2358

Abstract: PALCE29MA16 PALCE29MA16H-25 PD3024
Contextual Info: FINAL COM’L: H-25 PALCE29MA16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic ■ ■ ■ ■ ■ Register/Latch Preload permits full logic replacement; Electrically Erasable EE technology allows reprogrammability

Contextual Info: 74HC/HCT4316 MSI QUAD BILA TER A L SWITCHES FEATURES • • • • • TYPICAL Low "O N " resistance: 160 typ. at V q q — V EE - 4.5 V 120 H (typ.) at V c c - V EE = 6.0 V 80 Q (typ.) at V c c - V EE = 9.0 V Logic level translation: to enable 5 V logic to communicate

EETEE2G101HJ

Abstract: EETEE2G331LJ EETEE2W471LJ EE-125 EETEE2D EE126 EE-126 EET-EE2W181KJ
Contextual Info: Aluminum Electrolytic Capacitors/ EE Snap-in Type Series: EE Type : TS Country of Origin Japan n Features Endurance : 105°C 3000 h Miniaturize Maximum Ripple Current Low profile RoHS directive compliant U.S.A Malaysia n Recommended Applications For power supplies and inverters

gal programming algorithm

Abstract: PALCE29M16 PALCE29M16H PALCE29M16H-25 PD3024
Contextual Info: USE GAL DEVICES FOR NEW DESIGNS FINAL COM’L: H-25 Lattice Semiconductor PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic ■ Register/Latch Preload permits full logic replacement; Electrically Erasable EE

0 261 230 015

Contextual Info: Aluminum Electrolytic Capacitors/ EE Snap-in Type Series: EE Type: TS • Features ● Endurance : 105 °C 3000 h ● Miniaturize Maximum Ripple Current Low profile ● RoHS directive compliant ■ Specifications Category Temp. Range Rated W.V. Range Nominal Cap. Range

Contextual Info: Aluminum Electrolytic Capacitors/ EE Snap-in Type Series: EE Type: TS • Features ● Endurance : 105 °C 3000 h ● Miniaturize Maximum Ripple Current Low profile ● RoHS directive compliant ■ Specifications Category Temp. Range Rated W.V. Range Nominal Cap. Range

EETEE2W121JJ

Abstract: EETEE2W391KJ EETEE2E731KJ EETEE2G221JJ EETEE EETEE2G271HJ EETEE2D152 EETEE2W121KJ EE-142 EETEE2W301LJ
Contextual Info: Aluminum Electrolytic Capacitors/ EE Snap-in Type Series: EE Type: TS • Features ● Endurance : 105 °C 3000 h ● Miniaturize Maximum Ripple Current Low profile ● RoHS directive compliant ■ Specifications Category Temp. Range Rated W.V. Range Nominal Cap. Range

Contextual Info: Aluminum Electrolytic Capacitors/ EE Snap-in Type Series: EE Type: TS • Features ● Endurance : 105 °C 3000 h ● Miniaturize Maximum Ripple Current Low profile ● RoHS directive compliant ■ Specifications Category Temp. Range Rated W.V. Range Nominal Cap. Range

palce22v10 programming guide

Contextual Info: COM’L: H-10/15/25, Q-25 MIL: H-10/15/20/25/30 Zi Advanced Micro Devices PALCE22V10 Family 24-Pin EE CMOS Versatile PAL Device DISTINCTIVE CHARACTERISTICS • ■ ■ ■ As fast as 10 ns propagation delay and 83.3 MHz I max Low-power EE CMOS ■ Global asynchronous reset and synchronous

etd24

Abstract: FEER28 NC-2H NC-2h ferrite material ETD-24 FEER-40 EQ20R AUO-G1422.2H FEER-28L FEE-28/33/11
Contextual Info: E - Type Ferrite Cores •Ordering Code System [ Cores ] F EI - 40 NC-2H ① ② ③ ① Type of Core EI EE EER EIR ②Size of Core ③Material − 77 − I C A EE - Type Cores H B F Cores Dimensions mm Weight A B C F H I(min.) (g/Set) FEE-5 5.25±0.1 2.65±0.075

Contextual Info: Military 54F138 MOTOROLA 1 -of-8 Decoder Active Low Outputs With Enable Inputs ELECTRICALLY TESTED PER: MIL-M-38510/33701 H P O m T h e 5 4F 1 38 is a h ig h -sp ee d 1-of-8 D ecode r/D em u ltiple xe r. T h is device is ide a lly suited fo r h ig h -sp ee d b ip o lar m em ory ch ip se le ct a dd re ss decoding.

Contextual Info: PCB Chip Type Concave Flat Top TCI Part No. TIRSPT-P2F-3215C TIRSPT-P2F-3215K Matrial Silicon Silicon SMD Phototransistor VCE SAT IC (ON) Chip Outline (mm) Rise & Fall Time BVCEO (nS) Min.(V) Ee=mW/cm2 Max.(V) Ee=mW/cm2 Min.(mA) M Lens Color N m H Water Clear

ic pt 2358

Abstract: pt 2358 g6 amd
Contextual Info: AMDZI COM’L: H-25 PALCE29M A16H-25 T 24-Pin EE CMOS Programmable Array Logic V A W T I S AN AME» COMPANY DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ High-performance semicustom logic replacement; Electrically Erasable EE technology allows reprogrammability