H0400403 Search Results

1MBH20D-060-S06TT

Contextual Info: M e ssrs. R o ckw eil Autom ation C o .Ltd. SPECIFICATION IG BT o! nny o use property lliu lliv for ¡5 h«ruin n ui l f i e r s o i'v c r wliM fie s f in i i June-11-1998 Date w»y ¡ n í o r ru n I i on M S5F-4086 uny They : No. lu Un* nrid Spec. i l rs<:U>svO

Contextual Info: May 10 '02 S.Yoshiwatari May 10 '02 S.Miyashita T. Miyasaka DWG.No. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without

Contextual Info: DATE DRAWN CHECKED CHECKED Jan-18-&#39;02 Jan-18-&#39;02 Jan-18-&#39;02 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any

TJS10

Abstract: fuji IGBT e2ba
Contextual Info: Ratings and characteristics of Fuji IGBT 1 M B H 1 OD . Out!ine Drawing 6 2. Equivalent circuit C:Collector FWD C O N N F C T IO N CATE <2 > C O L L E C T O R O © D 3. Absolute maximum ratings E M IT T E R ( 10=25*0 ) Symbols Rat ings Collector-Emitter Voltage

DDD4425

Abstract: DDD4432 DDD443D
Contextual Info: SPEC 1F I C A T I O N DEVICE NAME TTPE NAME SPEC. No. G DATE B T Jun.-25-1998 r# F u This \ ; DATE 0RAW N¡ / U NAME j i Specification E is l e subject c t to r i c change C o . , Ltd. without notice. APPROVED Fuji Electric CoJLtd. K .' íÍ ' u a ^ i^li.

GDM207

Contextual Info: 22307=12 O D Ü M m T2b • ‘ S P E C I F I C A T I ON DEVICE NAME : TYPE NAME : SPEC. No. : I GBT 1M B H 2 0 D - 0 6 0 M S5F3686 M I _ :_ Jun. -25-1996 F uj i E l e c t r i c Co., Ltd. This Specification is subject to change without notice.

Contextual Info: S P E C I F I C A T I ON DEVICE NAHE :_ | g g j TYPE NAMF 1 M B H 5 0 — Of i O SPEC. No. MS 5 F 3 5 2 4 DATE : Jun. -25-1996 Fuji DATE DRAWN CHECKED NAME E l e c t r i c This Specification is subject to change without noti ce. APPROVED Fuji Electric CoJJd.

ESJA52-12A

Abstract: HIGH VOLTAGE DIODE 12kv 22VZ
Contextual Info: 1. SCOPE This specification provide the ratings and the requirements for high voltage silicon diode ESJA52-12A made by FUJI ELECTRIC CO.LTD. 2. OUT VIEW Shape and dimensions are described in Fig. 3. 3. IDENTIFICATION The diode shall be marked with Cathode Mark and Lot No.

t32 1-l

Contextual Info: Ratings and characteristics of Fuji IGBT 1 Í V 1 B H 3 D — 1 2 2. Equivalent circuit 1. Out Iine Drawing C:Collector î G :Gate FWD o Ò E:Emitter C O M N FC T I ON SATE CO LLECTO R © E M IT T E R 3. Absolute maximum ratings . C Tc=250C Ratings

HIGH VOLTAGE DIODE kv

Abstract: ESJA82-10A 223S7
Contextual Info: 1. SCOPE This specification provide the ratings and the requirements for high voltage si[icon diode ESJA82-10A made by FUJ1 ELECTR1C CO.,LTD. 2. OUT VIEW Shape and dimensions are described in Fig.3. 3. IDENTIFICATION . The diode shall be marked with Cathode Mark and Lot No.

DIODE 914

Abstract: ESJA53-18A GDD4775
Contextual Info: 1. SCOPE This specification provide the ratings and the requirements for high voltage silicon diode ESJA53-18A nade by RJJI ELECTRIC CO.,LTD. 2. OUT VIEW Shape and dimensions are described in Fig.3. 3. IDENTIFICATION The diode shall be marked with Cathode Mark and Lot No.

ESJA83

Abstract: ESJA83-16 ESJA83-16A
Contextual Info: SPECIFICATION u e v ic e T vd « S d s c nam e N am e . ; i l 1fe ll T U I k o g c : E S J A 8 3 —16A i i o u i u iu u g . . No. ivi iîï* nil il * * i 15 S ilfi •íg 1 ¡rS íí*]í • 5? ' ll» f H U ] liti* ?Js¿ Fuji Electric Co.,Ltd. Matsumoto Factory

IG8T

Abstract: WE VQE 11 E Z4020 FUJI ELECTRIC CO.,LTD
Contextual Info: Ratings and characteristics of Fuji IGBT 1 IVI B M 5 1 1. Out Iine Drawing 6 2. Equivalent circuit C :Co Ilector r.ONNFCTION © CATE © COLLECTOR © EMITTER 3 @ < > 3. Absolute maximum ratings C Tc=25°C Symbo1s 1terns Ratings Units Col lector-Einitter Voltage

diode T-71

Abstract: ESJA57-04A
Contextual Info: 1. SCOPE This specification provide the-ratings and the requirements for high voltage silicon diode ESJA57-04A made by FUJI ELECTRIC CO. .LTD. 2. OUT VIEW Shape and dimensions are described in Fig. 3. 3. IDENT FtCAT 1ON The diods shall be marked with Cathode Mark and Lot No.

1MBH10D-120

Contextual Info: *> SPECIFICATION DEVICE NAME TYPE NAME SPEC. No. DATE IG B T 1M B H 1 0 D - 1 2 0 MS 5 F 4-C9 f July-15-1997 Fuj i Electr ic Co.,Ltd. Matsumoto Factory DATE DRAWN NAME M / s -n CHECKED I Fuji Electric CaJLid /l/a o .’t i r/ii. f f APPROVED 7/ /? fiJyi MS5F4091

ERW07-120

Contextual Info: S P E C I F I C A T I O N DEVICE NAME : SILICON DIODE TYPE NAME : E RWO 7 - 1 2 0 SPEC. No. DATE Fuji E l e c t r i c Co., Ltd. This Specification is subject to change without notice. DATE NAM E APPROVED Fuji Electric C o d i c i DRAWN I A. CHECKED 1/6 Y 0257-R-004a

MMW4

Abstract: F5023
Contextual Info: p w tT "iltf T l* f C a ll it p aM h*' W t N 11 , M • * prtptrly pi r tp w lM M , «or «M 1w Q« iw iv lM t u ito g b a n a l« » irtO « u l lM>. « «Hc4mM li 4M xr; «tfi«1ú*Vii P9T lNr ü>r oí • »? 0 *<lifc F < |l Tib N*Urf>l i»a ih» lnror#iaiiaa

Contextual Info: ThI« m alarial and ha Information haraln la 1ha praparty of Fuji Elaelrio Co.pltd . Thay »hall ba nalthar raproduead, coplad, lanl. or dlacloaad In any way whataoavar for tha uta of any third party nor uaad for lh« manufacturing purpoaai w ithout tha axpraai wrtttan conMnt of Fuji ElaoOHc Co.Ltd.

Contextual Info: SPECIFICA TIO N Th ¿i material and ih« Information herein i« the property of Fuji Elee toc Co .Ltd They shveH be neither ««produced copied lent, or disclosed In any way wheisoeva* lor the uS6 of any third partynor used for the manufacturing purposes w ithout

Contextual Info: SPECIFICATION DEVICE NAME :_ I 6 B T TYPE NAME : SPEC. No. 1M B C 1 0 - 0 6 0 : M S5 F 3 5 1 9 DATE_ :_ Jun.-25-1996 Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE DRAWN CHECKED A NAME APPROVED Fuji Electric C oJJd

Contextual Info: Ratings and characteristics of Fuji IG8T 1 M B H 1 5 — 6 2. Equivalent c ir c u it I. Out I ine Drawing C:Collector O A G:Gate o FWD Ò E:Enii t t e r r.OWNFCTION CATE © COLLECTOR EMITTER © D (2 3. Absolute maximum ra tin g s ( Tc=25°C ) Symbo1s

A-132

Abstract: YA962S6R
Contextual Info: DATE DRAWN CHECKED Feb.-28'-02 Feb.-28'-02 Feb.-28'-02 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without

ERW01-060

Contextual Info: SPECI F I CAT I ON DEVICE NAME : SILICON DIODE TYPE NAME : E RW O 1 - 0 6 0 SPEC. No. : DATE F u j i E l e c t r i c Co. Ltd. T his S p e c ific a tio n is subject to change without notice. DRAWN [ CKKXEO DATE - NAME approved Fuji Electric Cadici. 1/6 R a t i n g s and c h a r a c t e r i s t i c s of Fuji

Contextual Info: SPECIFICATION DEVICE NAME : SILICON DIODE TYPE NANE : E R W 0 8 — 1 20 SPEC. No. DATE_ F u j i E l e c t r i c Co.Ltd. This Specification is subject to change without notice. DATE NAM E APPROVED Fuji Electric C o JJd - CHECKED 1 - I DWG.N0. DRAWN