MG75H2YS1
Abstract: ic l00a l00a
Text: GTR MODULE SILICON N CHANNEL IG8T MG75H2YS1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm 3-M 5 , 2 3±0.5, 2 3±0.5^ 82 4-FA ST-ON TAB # 1 10 2-<45.6±0.3 • High Input Impedance . High Speed : tf=l.Oys Max. trr=0•5 ys(Max.)
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MG75H2YS1
MG75H2YS1
ic l00a
l00a
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Untitled
Abstract: No abstract text available
Text: Ratings and characteristics of Fuji IG8T 1 M B H 1 5 — 6 2. Equivalent c ir c u it I. Out I ine Drawing C:Collector O A G:Gate o FWD Ò E:Enii t t e r r.OWNFCTION CATE © COLLECTOR EMITTER © D (2 3. Absolute maximum ra tin g s ( Tc=25°C ) Symbo1s
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H04-004-03
Q00M552
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LA-591
Abstract: No abstract text available
Text: T O S H IB A MG100Q2YS51 TO SH IBA GTR M O D U L E SILICON N C H A N N EL IG8T MG100Q2YS51 HIGH POW ER SW ITCHING APPLICATIONS M O T O R C O NTRO L APPLICATIONS H igh In p u t Im pedance H igh Speed : tf= 0 .3 //s Max. Inductive Load Low S a tu ratio n Voltage
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MG100Q2YS51
961001EAA2
LA-591
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IG8T
Abstract: No abstract text available
Text: s e M IK R O n SKiiP 462 GB 060 - 250 WT Absolute Maximum Ratings Symbol ¡Conditions " Values Units 600 400 400 800 - 4 0 . + 150 2500 400 800 4300 93 V V A A °C V A A A kA2s IG8T & Inverse Diode VcES Vcc 10> lc lew Tj 31 Visai 4 If Ifm Ifsm I2) Diode)
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1MBH20D-060-S06TT
Abstract: No abstract text available
Text: M e ssrs. R o ckw eil Autom ation C o .Ltd. SPECIFICATION IG BT o! nny o use property lliu lliv for ¡5 h«ruin n ui l f i e r s o i'v c r wliM fie s f in i i June-11-1998 Date w»y ¡ n í o r ru n I i on M S5F-4086 uny They : No. lu Un* nrid Spec. i l rs<:U>svO
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1MBH20D-060-S06TT
MS5F-4086
June-11-1998
H04-004-05
July-15-1997
1MBH20D-05Q
MS5F408Ã
H04-004-03
r4088
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3 phase igbt INVERTER ac motor
Abstract: 7b15a
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module M H PM 7B 15A 60A integrated Power Stage for 1.0 hp Motor Drives This device is not recommended for new designs (This device is replaced by MHPM7A10E60DC3) This module integrates a 3-phase input rectifier bridge, 3-phase
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MHPM7A10E60DC3)
HPM7B15A60A
3 phase igbt INVERTER ac motor
7b15a
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GY25N120
Abstract: n120 30 igbt
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGY25N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high
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MGY25
O-264
GY25N120
0E-05
0E-04
0E-03
0E-02
0E-01
GY25N120
n120 30 igbt
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fuji igbt 300v 20a
Abstract: No abstract text available
Text: This m aieriol and the Information herein Is ha properly of FujS Electric Co .Ltd They shall be neither reproduced, cop ie d lent, or disclosed in any way w hatsoever (or the use of any third party.nor used lor the manufacturing purposes w ithout the express written con sent of Fu|l Electric Co. Ltd.
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JuIy-15-1997
H04-004-0T
July-15-1997
H04-004-2T
125eC
H04-004-03T
MS5F4086
H04-004-03
fuji igbt 300v 20a
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MG100J2YS40
Abstract: FAp DARLINGTON TRANSISTOR TOSHIBA IGBT snubber ap 5331 application POWER MOSFET HIG VELOCITY calculation of IGBT snubber P-Channel IGBT TRANSISTOR EN SMD TZ FAp DARLINGTON SMD TRANSISTOR
Text: TOSHIBA 2. [ 5 ] IGBT Description IGBT Construction 2.1 Chip Construction IGBT Insulated G ate B ipolar T ransistors are devices which combine the high in p u t im pedance and high speed of th e M OSFET w ith the high conductivity characteristics (low sa tu ratio n
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SC-65
Abstract: No abstract text available
Text: 22307^5 0QD4177 3b5 m S P E C 1F 1C A T I O N DEVICE NAME : TYPE NAME : SPEC. No. : 1G B T 1 M B 2 0 - 0 6 0 M S 5 F 3 5 2 2 Jun.-25-199fi F u j i DATE E l e c t r i c Co., Ltd. This Specification is subject to change without noti ce. NAM E APPROVED DRAWN
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0QD4177
1MB20
MS5F3522
SC-65
H04-004-03
G0D41flb
H04-004-03
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QQG441A
Abstract: DDD4421
Text: S P E C 1 F 1 C A T 10 N DEVICE NAME : TYPE NAME : SPEC. Mo. • MS 5 F 3 5 3 1 DATE • Jun. -25-1996 1G B T 1 M B H 2 5 - 1 20 Fuji DATE CH£CK£D E l e c t r i c Co.Ltd. This Specification is subject to change without not ice. NAME APP RO VE D Fuji Electric Ca,Lid.
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199fi
00G4H13
H04-004-0T
20-5mÂ
MS5F3531
H04-004-03
DDD4421
MS5F3531
223fl7T2
G00M422
QQG441A
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DDD421S
Abstract: No abstract text available
Text: X SPEC 1 F 1 CATI ON DEVICE NAME : I G BT TYPE NAME : 1MB 3 0 - SPEC. No. ; DATE : 0 6 0 M S 5 F 3 5 2 3 J u n .-2 5 -1 9 9 6 F u j i T h is S p e c ific a tio n DATE DRAW N CHECKED NAME E l e c t r i c C o. L td. is s u b je c t to change w ith o ut not ice.
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MS5F3523
H04-004-07
0GD4211
H04-004-03
M21cl
DGGM22D
H04-004-03
DDD421S
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION DEVICE NAME 1G BT TYPE NAME : SPEC. No. : M S 5 F 3 5 0 5 DATE : Jun. -25-1996 1MB C 1 0 D — 0 6 0 F u j i E l e c t r i c C o. Ltd. T h is S p e c if ic a t io n is su b je c t to change w ithout notice. DATE DRAWN iN A M E APPROVED Fuji Electric CoJLtd.
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H04-004-OT
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F4086
Abstract: 1MBH20D-060-S06TT vcc4-g
Text: M essrs. R o c k w e il A u t o m a tio n C o . . Ltd. SPECIFICATION IG BT o! nny o use property lliu lliv for ¡5 h«ruin nuilfier so i'vcr wliM fie sfin ii June-11-1998 Date w »y ¡ n í o r ru n I i on M S5F-4086 uny They : No. lu Un* nrid Spec. i lr s<: U>sv O
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1MBH20D-060-S06TT
MS5F-4086
June-11-1998
H04-004-05
July-15-1997
MS5F408Ã
H04-004-03
H04-004-03
F4086
1MBH20D-060-S06TT
vcc4-g
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IG8T
Abstract: No abstract text available
Text: 1 l»ny the e*press woy w h n ts o o v e r ol It ll«e p ro per lv ol w iih o u l USO ol a n y Co . l i d p u rp oses lor ih$ Fuji Electric lor ihr» rn a n u la c lu rin g w i l l le n c o n s e n t third p a rly .n o f used herein sl>«» be nei|l»er 'rip ro d u ca ti, c o p ie d
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MS5F377U^
1800PN--
IG8T
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g47e
Abstract: F4084 1MBH10D-060 1MBH10D-060-S06TT
Text: third parly nor used or the m anufacturing purposes Ihe express written consent ol Fuji Electric Co.Ltd. w ith o u t This rnnlorlnl nnd (he Information heroin is Ihe properly of Fuji Electric C o .,U d . They slinll l>e neither re p ru d u cu d , c o p ie d ,
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1MBH10D-060-S06TT
MS5F-4084
June-11-1998
S5F4084
H04-0Ã
July-15-1997
MS5F4034
MS5F40S4
g47e
F4084
1MBH10D-060
1MBH10D-060-S06TT
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Untitled
Abstract: No abstract text available
Text: third parly nor used or the m anufacturing purposes Ihe express written consent ol Fuji Electric Co.Ltd. w ith o u t This rnnlorlnl nnd (he Information heroin is Ihe properly of Fuji Electric C o .,U d . They slinll l>e neither re p ru d u cu d , c o p ie d ,
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MS5F-4084
1MBH10D-060-S06TT
June-11-1998
MS5F4084
H04-004-05
F4034
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agbf
Abstract: LT 5351
Text: Revised Date Classi fication tnd. Content enactment Ft# Electric Ca,LtcL Records Applied date Issued date Brawn Checked Approved - MS5F3241 # »4-004-06 3 IM B I 4 O O M B - I 3 0 t. Outline Drawinn Unit : ma 2. Equivalent circuit -OB c o- o Ô G *NUJ (Over Carrent Liai ting Circuit
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MS5F3241
H04-004-03
agbf
LT 5351
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IG8T
Abstract: No abstract text available
Text: This m a ie rio l and the Information herein Is ha properly of FujS Electric Co .Ltd They shall be neither reproduced, c o pied le n t, or disclosed in any way w hatsoever (or the use of any third party.nor used lor the m anufacturing purposes w ith o u t
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JuIy-15-1997
H04-004-0T
July-15-1997
H04-004-2T
125eC
H04-004-03T
MS5F4086
H04-004-03
IG8T
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Untitled
Abstract: No abstract text available
Text: This m a ie rio l and the Information herein Is ha properly of FujS Electric Co .Ltd They shall be neither reproduced, c opie d le n t, or disclosed in any way w hatsoever (or the use of any third party.nor used lor the m anufacturing purposes w ith o u t
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JuIy-15-1997
H04-004-0T
July-15-1997
H04-004-2T
125eC
H04-004-03T
MS5F4086
H04-004-03
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Diode C219
Abstract: resistance 220 ohm diode 1n6
Text: International lï»RjRectifier PD-9.958B IRGTI120F06 "HALF-BRIDGE" IGBT INT-A-PAK Fast Speed IGBT H a lf-B rid g e VCE = 600V • Rugged Design •Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant • Switching-Loss Rating includes all "tail"
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IRGTI120F06
10KHz
50KHz
su513
IRGTI120F06
100nH
C-224
Diode C219
resistance 220 ohm
diode 1n6
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Untitled
Abstract: No abstract text available
Text: OM6533SF OM6534SF INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC PACKAGE 1000 Volt. 50 A m p . N -C h a n n e l IGBT In A H e rm e tic M etal P ackage FEATURES • • • • • • • • Isolated IGBTs In A Hermetic Package High Input Impedance
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OM6533SF
OM6534SF
MIL-S-19500,
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RMJ BH
Abstract: SKIIP2* CASE
Text: s e MIKRO n SKiiP 262 GPL 060 - 452 W T 12 Absolute Maximum Ratings Symbol | Conditions1* IGBT & Inverse Diode V ces V c c 101 lc iCM T j 3' Visol 41 If I fm I fsm l2t Diode) Driver Vsi V s 2 9* dv/dt Top, Tstg Operating DC link voltage Theatsink - 25 °C
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262GD060
RMJ BH
SKIIP2* CASE
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40n60 transistor
Abstract: 30N60 40n60 30N60A 40n60 igbt 17N10 wiom DC transistor JE 1090 20N60A igbt equivalent to 40n60
Text: MbE D • Mb S b S E b OO O O S T M T «IXY I X V S CORP T □IX Y S I V I S Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features • • • Guaranteed Short Circuit Capability SCSOA Optimized for 60Hz to 30kHz Switching
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1560A
30kHz
IXSH20N60
IXSM20N60
Tj-125
40n60 transistor
30N60
40n60
30N60A
40n60 igbt
17N10
wiom DC
transistor JE 1090
20N60A
igbt equivalent to 40n60
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