H10 NPN Search Results

Contextual Info: UMH10N IMH10A Transistor, digitai, dual, NPN, with 2 resistors Features Dimensions Units : mm • available in UMT6 (UM6) and SMT6 (IMD, SC-74) package • package marking: UMH10N and IMH10A; H10 • • • UMH10N (UMT6) 2.0±0.2 3 U 2 M 1) package contains two independent

SC8810

Abstract: transistor h9 DTC124EK equivalent DI-74 H9 transistor marking DTC114TK dtc143tk
Contextual Info: D I G I TA L T R A N S I S T O R A R R AY S DUAL ISOLATED NPN TRANSISTOR CIRCUITS • COMPLETE SUB–CIRCUITS IN A SINGLE PACKAGE: SAVE PLACEMENT COSTS, INCREASES RELIABILITY • APPLICATIONS INCLUDE: PRE-AMPS, TV TUNERS, MIXER OSCILLATORS, INTERFACING LOGIC,

Contextual Info: General purpose dual digital transistors EMH10 / UMH10N Dimensions (Unit : mm) Structure Epitaxial planar type NPN silicon transistor (Built-in resistor type) 0.22 Features 1) Two DTC123J chips in a EMT or UMT package. 2) Mounting possible with EMT3 or UMT3 automatic mounting machines.

Contextual Info: General purpose dual digital transistors EMH10 / UMH10N Structure Epitaxial planar type NPN silicon transistor (Built-in resistor type) Dimensions (Unit : mm) 0.22 Features 1) Two DTC123J chips in a EMT or UMT package. 2) Mounting possible with EMT3 or UMT3 automatic mounting machines.

Contextual Info: AEC-Q101 Qualified General purpose dual digital transistors EMH10 / UMH10N EMH10FHA / UMH10NFHA Dimensions (Unit : mm) Structure Epitaxial planar type NPN silicon transistor (Built-in resistor type) 0.22 Features 1) Two DTC123J chips in a EMT or UMT package.

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

SOT-353 marking code B2

Contextual Info: EMH10 / UMH10N Datasheet NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors lOutline Parameter Tr1 and Tr2 EMT6 UMT6 (6) (6) VCC IC(MAX.) R1 R2 50V 100mA 2.2kW 47kW (5) (5) (4) (4) (1) (1) (2) (2) (3) (3) EMH10 (SC-107C) lFeatures

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: K4-Antriebssysteme Genial vielseitig Das Unternehmen ebm-papst Die ganze Welt der Luft- und Antriebstechnik: Das ist die Welt von ebm-papst. Über 11.000 Mitarbeiterinnen und Mitarbeiter – in aller Welt – entwickeln, produzieren und vertreiben Motoren und Ventilatoren. Globale Präsenz und unser einzigartiges Produktprogramm mit einem Qualitätsstandard, der seinesgleichen sucht, haben uns zum Weltmarktführer gemacht. Ein hohes Wissen um die Bedürfnisse unserer Kunden sowie das

IRFD620

Abstract: IRFD420 IRFD9220 h10 npn
Contextual Info: International lo i Rectifier HEXFET Power MOSFETs HEXDips Low charge HEXFETs reduce gate charge by 40% or more and capacitances by up to 85% without any added device cost. Part Number IRF0C10LC V BR d s s Drain-to-Source ROS(on) lg Continuous On-State Drain Current

BC328

Abstract: BC338
Contextual Info: SEMICONDUCTOR TECHNICAL DATA BC328 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • High Current : Ic=-800mA. • DC Current Gain : hFE=100~630 VCE=-1V, Ic=-100mA . • For Complementary with NPN type BC338.

DTC123J

Abstract: EMH10 IMH10A T110 UMH10N
Contextual Info: EMH10 / UMH10N / IMH10A Transistors General purpose dual digital transistors EMH10 / UMH10N / IMH10A zExternal dimensions (Units : mm) zFeatures 1) Two DTC123J chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines.

Contextual Info: K4-Antriebssysteme Genial vielseitig Ausgabe 2015-04 K4_Antriebssysteme_2015_4_D.indd 1 29.04.2015 14:59:48 Das Unternehmen ebm-papst Die ganze Welt der Luft- und Antriebstechnik: Das ist die Welt von ebm-papst. Über 11.700 Mitarbeiterinnen und Mitarbeiter – in aller Welt –

transistor marking MH

Abstract: 400M KSC2755 marking uma samsung tv marking mh npn
Contextual Info: SAMSUNG SEMICONDUCTOR INC 14E KSC2755 D | OOObma S | NPN EPITAXIAL SILICON TRANSISTOR T -3 1-1 5 RF AMP, FOR VHF TV TUNER • LOW NF, HIGH Gpe • NF=2.0dB Typ. G pe=23dB Typ. f=200MHz • FORW ARD A G C CAPABILITY TO 30 dB ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

dc motor for 24v braun

Contextual Info: 16:47 Seite 75 Informationen 18.01.2011 94 VARIODRIVE Compact ECI-Motorsensorik VarioDrive C 82 ECI-Motor ECI-Getriebemotor BG-Motor 79 BCI-Motor ECI-Motoren AC-Motoren 76 Beschreibung ECI-Motor Technik VARIODRIVE Die Motorfamilie ECI 75 Vertretungen Antriebstechnik_2011_01_18_Finale_DE_:Vorlage

Contextual Info: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc

Contextual Info: K4 drive systems Brilliantly versatile , The engineer s choice version 2015-04 K4_Antriebssysteme_2015_4_EN.indd 1 29.04.2015 14:59:28 Company profile: ebm-papst The entire scope of ventilation and drive technology: this is the world of ebm-papst. More than 11.700 people – in Germany and throughout the world –

mps 1049

Abstract: JB marking transistor Marking H11 sot marking JB sot23 JB MARKING SOT-23
Contextual Info: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS

Contextual Info: EMH10 / UMH10N / IMH10A Transistors General purpose dual digital transistors EMH10 / UMH10N / IMH10A zExternal dimensions (Units : mm) zFeatures 1) Two DTC123J chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines.

DTC123

Abstract: DTC123J EMH10 IMH10A T110 UMH10N IMH10
Contextual Info: EMH10 / UMH10N / IMH10A Transistors General purpose dual digital transistors EMH10 / UMH10N / IMH10A zExternal dimensions (Unit : mm) zFeatures 1) Two DTC123J chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines.

Contextual Info: 10:14 Seite 75 Information 27.05.2011 94 VARIODRIVE Compact ECI motor sensor VarioDrive C 82 ECI motor ECI gearmotors BG motor 79 BCI motor ECI motors AC motors 76 Specifications ECI motor technical information VARIODRIVE The ECI motor family 75 Representatives

Contextual Info: Ordering number:ENN6079 PNP/NPN Silicon Epitaxial Planar Transistors CPH 3110/3210 IS A 0 O I DC/DC Converter Applications Applications • Relay drivers, lamp drivers, motor drivers, and strobes. Package Dimensions unit:mm 2150A [CPH3110/3210] 2.9 0.15. r 0, 4

BUX100

Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistor BUX100 GENERAL DESCRIPTION High voltage, high speed glass passivated npn power transistor in a SOT82 envelope intended for use in high frequency electronic lighting ballast applications.

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the