IRFD220 Search Results

IRFD220 Datasheets (28)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IRFD220	Fairchild Semiconductor	0.8a 200v 0.800 Ohm N-channel Power Mosfet	Original	PDF	89.79KB	7
IRFD220	Harris Semiconductor	Power MOSFET Selection Guide	Original	PDF	41.91KB	1
IRFD220	Intersil	0.8A, 200V, 0.800 ?, N-Channel Power MOSFET	Original	PDF	53.14KB	6
IRFD220	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
IRFD220	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 800MA 4-DIP	Original	PDF		9
IRFD220	General Electric	Power Transistor Data Book 1985	Scan	PDF	124.72KB	2
IRFD220	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF	177.08KB	5
IRFD220	International Rectifier	HEXFET Power MOSFETs	Scan	PDF	51.17KB	1
IRFD220	International Rectifier	Plastic Package HEXFETs	Scan	PDF	106.28KB	1
IRFD220	International Rectifier	HEXFET Power MOSFET	Scan	PDF	179.08KB	6
IRFD220	International Rectifier	Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=0.80A)	Scan	PDF	179.08KB	6
IRFD220	International Rectifier	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 200V, .8A, Pkg Style HEXDIP	Scan	PDF	50.01KB	1
IRFD220	Motorola	European Master Selection Guide 1986	Scan	PDF	39.32KB	1
IRFD220	Motorola	TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39	Scan	PDF	638.03KB	19

IRFD220	Motorola	1 Watt TMOS FETs	Scan	PDF	140.06KB	2
IRFD220	Motorola	Switchmode Datasheet	Scan	PDF	41.76KB	1
IRFD220	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	36.82KB	1
IRFD220	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	36.82KB	1
IRFD220	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	106.71KB	1
IRFD220	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	129.94KB	1

IRFD220 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: IRFD220 Data Sheet Title FD 0 bt 8A, 0V, 00 m, July 1999 0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of	Original	IRFD220 TB334	PDF
IRFD220 Abstract: SiHFD220-E3 IRFD220PBF Contextual Info: IRFD220, SiHFD220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.80 Qg (Max.) (nC) 14 Qgs (nC) 3.0 Qgd (nC) 7.9 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	IRFD220, SiHFD220 2002/95/EC 18-Jul-08 IRFD220 SiHFD220-E3 IRFD220PBF	PDF
IRFD220 Abstract: Transistors c-3229 C 3229 IRFD221 D220 IRFD222 IRFD223 Contextual Info: - Standard Power MOSFETs File Number IRFD220, IRFD221, IRFD222, IRFD223 23117 Power MOS Field-Effect Transistors N -C H A N N EL ENHAN C EM EN T MODE	OCR Scan	IRFD220, IRFD221, IRFD222, IRFD223 92CS-3374I IIRFD221, IRFD223 IRFD220 Transistors c-3229 C 3229 IRFD221 D220 IRFD222	PDF
fd220 Abstract: IRFD220 IRFD221 1RFD220 Contextual Info: IRFD220,221 D82CN2.M2 iPSMM-iiæa Mûr FIELD EFFECT POWER TRANSISTOR This series of NhChannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DM OS technology to achieve low on-resistance with excellent device rugged ness and reliability.	OCR Scan	IRFD220 P82CN2 ruggedness600 00A//US, fd220 IRFD221 1RFD220	PDF
IRFD220PBF Abstract: IRFD220 SiHFD220 SiHFD220-E3 Contextual Info: IRFD220, SiHFD220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.80 Qg (Max.) (nC) 14 Qgs (nC) 3.0 Qgd (nC) 7.9 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	IRFD220, SiHFD220 18-Jul-08 IRFD220PBF IRFD220 SiHFD220-E3	PDF
Contextual Info: h a r ^ IRFD220, IRFD221, IRFD222, IRFD223 s s e m i c o n d u c t o r 0.7A and 0.8A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 0.7A and 0.8A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate	OCR Scan	IRFD220, IRFD221, IRFD222, IRFD223	PDF
IRFD220 Contextual Info: IRFD220, IRFD221, IRFD222, IRFD223 S E M I C O N D U C T O R 0.7A and 0.8A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 0.7A and 0.8A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power	Original	IRFD220, IRFD221, IRFD222, IRFD223 TA09600. IRFD220	PDF
diode 222r Abstract: MOSFET 4407 a circuit 4407 Contextual Info: 2 HARRIS IR FD 220/221/222/223 IRFD220R/221R/222R/223R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package F e a tu re s 4-P IN DIP • 0.7 A and 0.8A , 1 5 0V - 2 0 0V TOP VIEW • rDS(on = 0 .8 H and 1 .2 Ct • Single Pulse Avalanche Energy R ated*	OCR Scan	IRFD220R/221R/222R/223R diode 222r MOSFET 4407 a circuit 4407	PDF
SiHFD220 Contextual Info: IRFD220, SiHFD220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.80 Qg (Max.) (nC) 14 Qgs (nC) 3.0 Qgd (nC) 7.9 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	IRFD220, SiHFD220 12-Mar-07	PDF
4501m Abstract: AN609 IRFD220 Contextual Info: IRFD220_RC, SiHFD220_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	IRFD220 SiHFD220 AN609, 0426m 8968m 4501m 6212m 25-Oct-10 4501m AN609	PDF
IRFD120 Contextual Info: PD- 95917 IRFD220PbF Lead-Free Document Number: 91131 10/27/04 www.vishay.com 1 IRFD220PbF Document Number: 91131 www.vishay.com 2 IRFD220PbF Document Number: 91131 www.vishay.com 3 IRFD220PbF Document Number: 91131 www.vishay.com 4 IRFD220PbF Document Number: 91131	Original	IRFD220PbF 12-Mar-07 IRFD120	PDF
IRFD220PBF Abstract: IRFD120 Contextual Info: PD- 95917 IRFD220PbF Lead-Free www.irf.com 1 10/27/04 IRFD220PbF 2 www.irf.com IRFD220PbF www.irf.com 3 IRFD220PbF 4 www.irf.com IRFD220PbF www.irf.com 5 IRFD220PbF 6 www.irf.com IRFD220PbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations	Original	IRFD220PbF IRFD120 IRFD220PBF IRFD120	PDF
IRFD220 Contextual Info: IRFD220, SiHFD220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) () VGS = 10 V 0.80 Qg (Max.) (nC) 14 Qgs (nC) 3.0 Qgd (nC) 7.9 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	IRFD220, SiHFD220 2002/95/EC 11-Mar-11 IRFD220	PDF
IRFD221 Abstract: 3203 MOSFET Contextual Info: MOTOROLA SC ÍXSTRS/R F} Tfl 6367254, M O T O R O L A SC XSTRS/R F öF\|fc,3t7aSL( 0003202 ; . 980 63282 D IRFD220-223 T ' 3 5 ~S lS ELECTRICAL CHARACTERISTICS — C o n tin u e d (Tc - 25°C unless otherwise noted) Characteristic Symbol Min Typ Max U nit	OCR Scan	IRFD220-223 IRFD220, IRFD221 IRFF110 IRFF113 IRFF113 3203 MOSFET	PDF

IRFD220 Abstract: TB334 Contextual Info: IRFD220 Data Sheet January 2002 0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET Features • 0.8A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of	Original	IRFD220 IRFD220 TB334	PDF
rectifier s4 79 Abstract: diode t7e irfd220 Contextual Info: International SMI Rectifier 4 ÔS S4 S5 GÜ1S0MÜ I T T H IN R PD-9.417F IRFD220 INTERNATIONAL HEXFET Power MOSFET b5E RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of Paralleling Simple Drive Requirements	OCR Scan	IRFD220 rectifier s4 79 diode t7e irfd220	PDF
Contextual Info: IRFD220, SiHFD220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) () VGS = 10 V 0.80 Qg (Max.) (nC) 14 Qgs (nC) 3.0 Qgd (nC) 7.9 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	IRFD220, SiHFD220 2002/95/EC 18-Jul-08	PDF
IRFD220 Abstract: TB334 la 4287 Contextual Info: IRFD220 Data Sheet July 1999 0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET • 0.8A, 200V • rDS ON = 0.800Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics	Original	IRFD220 TB334 TA09600. IRFD220 TB334 la 4287	PDF
irfd220 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRFD220 IRFD223 TMOS Field Effect Transistors Dual In-Line Package N-Channel Enhancement Mode Ideal for Peripheral Control Applications Intermediate 1 Watt Power Capability Standard DIP Outline T TMOS TMOS FET TRANSISTORS	OCR Scan	IRFD220 IRFD223 IRFD223	PDF
mosfet k 2038 Abstract: IRFD222R 250M IRFD220R IRFD221R IRFD223R Contextual Info: Rugged Power M O S F E T s_ File Num ber 2038 IRFD220R, IRFD221R, IRFD222R, IRFD223R Avalanche Energy Rated N-Channel Power MOSFETs 0.8A a n d 0.7A, 1 5 0 V -2 0 0 V ros on = 0.8fi a n d 1 .2 0 N -C H A N N E L E N H A N C E M E N T M O D E	OCR Scan	IRFD220R, IRFD221R, IRFD222R, IRFD223R 50V-200V IRFD222R IRFD223R mosfet k 2038 250M IRFD220R IRFD221R	PDF
Contextual Info: IRFD220, SiHFD220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) () VGS = 10 V 0.80 Qg (Max.) (nC) 14 Qgs (nC) 3.0 Qgd (nC) 7.9 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	IRFD220, SiHFD220 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
IRFD120 Contextual Info: PD- 95917 IRFD220PbF Lead-Free 1 IRFD220PbF 2 IRFD220PbF Hexdip Package Outline Dimensions are shown in millimeters inches Hexdip Part Marking Information THIS IS AN IRFD120 INTERNAT IONAL RECT IF IER LOGO PART NUMBER IRFD120 XXXX AS S EMBLY LOT CODE	Original	IRFD220PbF IRFD120 IRFD120	PDF
Contextual Info: IRFD220, SiHFD220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) () VGS = 10 V 0.80 Qg (Max.) (nC) 14 Qgs (nC) 3.0 Qgd (nC) 7.9 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	IRFD220, SiHFD220 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
IRFD220 Abstract: 417F Contextual Info: International S Rectifier PD-9.417F IRFD220 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of Paralleling Simple Drive Requirements VDSS= 200V ^DS on = 0 -8 0 Q	OCR Scan	IRFD220 IRFD220 417F	PDF

IRFD220 Search Results

IRFD220 Datasheets (28)

IRFD220 Datasheets Context Search

IRFD220

IRFD220

fd220

IRFD220PBF

IRFD220

diode 222r

SiHFD220

4501m

IRFD120

IRFD220PBF

IRFD220

IRFD221

IRFD220

rectifier s4 79

IRFD220

irfd220

mosfet k 2038

IRFD120

IRFD220