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    H14Y Search Results

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    Panduit Corp UTPCH14Y

    COPPER PATCH CORD, CAT 5E, OFF W
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    JRH Electronics M55302-58-H14Y-6

    Military Rectangular PCB Connect
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    DigiKey M55302-58-H14Y-6 1
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    JRH Electronics M55302-58LH14Y-7

    Military Rectangular PCB Connect
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    DigiKey M55302-58LH14Y-7 1
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    JRH Electronics M55302-58-H14Y-7

    Military Rectangular PCB Connect
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    DigiKey M55302-58-H14Y-7 1
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    JRH Electronics M55302-58-H14Y-11

    Military Rectangular PCB Connect
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    DigiKey M55302-58-H14Y-11 1
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    H14Y Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    H12Y

    Abstract: H11X H11Y H14Y H10Y 20-channel
    Text: SSI 32R2112R 20-Channel Thin Film Read/Write Device October 1995 FEATURES The SSI 32R2112R is a BiCMOS monolithic integrated circuit designed for use with two-terminal recording heads. They provide a low noise read amplifier, a high performance write driver, write current control, and


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    PDF 32R2112R 20-Channel 32R2112R 32R2110R/2111R 32R2112 mak17 64-Lead, H12Y H11X H11Y H14Y H10Y

    philips ecg master replacement guide

    Abstract: smd transistor WW1 ecg philips semiconductor master book ww1 transistor smd philips ecg replacement guide fcs 9013 ECG transistor replacement guide book free data sheet NPN 9013 smd marking hry 32R2024
    Text: STORAGE PRODUCTS REFERENCE GUIDE Market Number Channels Flip Flop Input Type Noise nV/Hz Write Current, mA Input Cap, pF Servo Enable Voltage Gain Damp Resistor Bandwidth MHz, Min. Package Min. Head Swing Vp-p R 5 & 12 Volt Thin Film Read/Write Preamps Rise time 7 ns, Head Swing 11 Vp-p, Power 235 mW


    Original
    PDF 32R2105RW 32R2110RW 32R2111RW 32R2112RU 32R2124RV philips ecg master replacement guide smd transistor WW1 ecg philips semiconductor master book ww1 transistor smd philips ecg replacement guide fcs 9013 ECG transistor replacement guide book free data sheet NPN 9013 smd marking hry 32R2024

    H14Y

    Abstract: VM31316
    Text: m a VTC Inc. Value the Customer VM31316 16-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY FEATURES July, 1993 CONNECTION DIAGRAM • High Performance: - Read mode gain = 150 V/V - Low input noise = 0.8nVA/Hz maximum - Input capacitance = 25 pF maximum


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    PDF VM31316 16-CHANNEL, 32R2010 10OmV, 10MHz 600nH, H14Y VM31316

    H14Y

    Abstract: No abstract text available
    Text: VM5200M VTC Inc. Value the C ustom er 10 OR 20-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY DESCRIPTION The VM5200M is a high-performance, integrated read/write preamplifier designed for use with two-terminal, thin-film record­


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    PDF VM5200M 20-CHANNEL, VM5200M 100mV, 10MHz H14Y

    VM VTC

    Abstract: No abstract text available
    Text: VM31216 Value the Customerm 16-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER August, 1995 FEATURES • • • • • • • • • High Performance: - Read Mode Gain = 150 V/V - Low Input Noise = 0.85nV/VHz Maximum - Input C apacitance = 25 pF Maximum


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    PDF VM31216 16-CHANNEL, V/12V 85nV/VHz 32R2015 600nH, VM VTC

    Untitled

    Abstract: No abstract text available
    Text: SSI 32R2015R ¿immsiiskms 16-Channel Thin Film Read/Write Device A TDK Group/Company Advance Information January 1993 DESCRIPTION FEATURES The SSI 32R2015R is an integrated read/write circuit designed for use with two terminal heads in disk drive systems. The device contains sixteen channels of read


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    PDF 32R2015R 330i2 52-pin 32R2015R 16-Channel

    MAX232

    Abstract: H14Y
    Text: VM782020 V W Y J £ |2 £ - 20-CHANNEL, 5-VOLT, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER August, 1994 FEATURES • High Performance - Read Gain = 200 V/V Typical - Input Noise = 0.55nV/VFiz Typical - Head Inductance Range = 0 . 2 - 5 |o.H 0.5 nH Typical - IW Rise/Fall Times = 9 ns (LH = 1 (j.H, lw = 20 mA b-p)


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    PDF VM782020 20-CHANNEL, 55nV/VFiz VM782020 MAX232 H14Y

    32R2015R

    Abstract: No abstract text available
    Text: SSI 32R2015R ¿ ik m s if s k m 16-Channel Thin Film Read/Write Device s A TDK Group/Company Advance Information January 1993 DESCRIPTION FEATURES The SSI 32R2015R is an integrated read/write circuit designed for use with two terminal heads in disk drive systems. The device contains sixteen channels ot read


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    PDF 32R2015R 16-Channel 32R2015R 52-pin

    Untitled

    Abstract: No abstract text available
    Text: W ^ VValue T the C Customer -In c v VM31316 16-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER ADVANCE INFORMATION FEATURES July, 1992 C O N NECTIO N D IA G R A M TWO-TERMINAL READ/WRITE PREAMPS • High Performance: - Read mode gain = 150V/V_


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    PDF VM31316 16-CHANNEL, 50V/V_ 85nV/VHz 200nH 10MHz 100mV, 10MHz 600nH,

    H14Y

    Abstract: No abstract text available
    Text: SSI 32R2112R m m M k m 20-Channel Thin Film Read/Write Device s ' A TDK Group/Company October 1995 DESCRIPTION FEATURES 5V ± 10%, 12V ± 10% supply The SSI 32R2112R is a BiCMOS monolithic integrated circuit designed for use with two-terminal recording heads. They provide a low noise read amplifier, a high


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    PDF 32R2112R 20-Channel 32R2112R 32R2110R/2111R 32R2112 32R2112RU 64-Lead 32R2112RU-20CGT 32R2112RU-20 3B-46 H14Y

    H16Y

    Abstract: No abstract text available
    Text: m S S I3 2 R 2 1 1 2 R 20-Channel Thin Film Read/Write Device m s u s b n s * A TDK Group/Company October 1995 DESCRIPTION FEATURES The SSI 32R2112R is a BiCMOS monolithic integrated circuit designed for use with two-terminal recording heads. They provide a low noise read amplifier, a high


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    PDF 20-Channel 32R2112R 32R2110R/2111R 250i2 32R2112 32R2112RU 64-Lead 32R2112RU-20CGT 32R2112RU-20 3B-46 H16Y

    H21Y

    Abstract: HD14X HD14Y
    Text: ê* é VM 313H24 VTC In c . W 24-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER August, 1994 FEATU R ES CONNECTION DIAGRAM • High Performance: - Read Mode Gain = 250V/V - Low Input Noise = 0.8nV/VHz Maximum - Input Capacitance = 25pF Maximum


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    PDF 313H24 24-CHANNEL, 50V/V 200nH VM313H24 10MHz 600nH, H21Y HD14X HD14Y