H2N7000 Search Results
H2N7000 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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H2N7000 | Hi-Sincerity Mocroelectronics | N-Channel Enhancement Mode Transistor | Original |
H2N7000 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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diode marking H2
Abstract: H2N7000
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Original |
HE6267 H2N7000 H2N7000 150oC 200oC 183oC 217oC 260oC 245oC 10sec diode marking H2 | |
H2N7000Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6267 Issued Date : 1993.09.17 Revised Date : 2001.04.18 Page No. : 1/4 H2N7000 N-CHANNEL ENHANCEMENT MODE TRANSISTOR Description The H2N7000 is designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drivers. |
Original |
HE6267 H2N7000 H2N7000 | |
H2N7000Contextual Info: H2N7000 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor █ General Description TO-92 These products have been designed to minimize on-state resistance While provide rugged, reliable, and fast switching performance. These products |
Original |
H2N7000 500mA 200mA H2N7000 |