H5 MARKING Search Results

2N06LH5

Abstract: S6054 DIODE H5 SMD Q67060-S6055 smd diode H5 SPB80N06S2L-H5 ANPS071E SPP80N06S2L-H5
Contextual Info: SPP80N06S2L-H5 SPB80N06S2L-H5 OptiMOS =Power-Transistor Product Summary Feature 55 VDS
N-Channel R DS on
Enhancement mode ID
175°C operating temperature Type SPP80N06S2L-H5 Package Ordering Code P- TO220 -3-1 Q67060-S6054 Marking SPB80N06S2L-H5 P- TO263 -3-2 Q67060-S6055

2N06LH5

Abstract: DIODE H5 SMD Q67060-S6055 S6054 smd diode H5 ANPS071E SPB80N06S2L-H5 SPP80N06S2L-H5 2N06
Contextual Info: SPP80N06S2L-H5 SPB80N06S2L-H5 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS • Enhancement mode R DS on 55 ID • 175°C operating temperature • dv/dt rated Package Ordering Code Marking SPP80N06S2L-H5 P- TO220 -3-1 Q67060-S6054

2N06LH5

Abstract: Q67060-S6055 Q67060-S6054 BSPP80N06S2L-H5 smd diode 1410 TC320
Contextual Info: SPP80N06S2L-H5 SPB80N06S2L-H5 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel 55 R DS on • Enhancement mode ID • 175°C operating temperature 5 mΩ 80 P- TO263 -3-2 • Avalanche rated V A P- TO220 -3-1 • dv/dt rated Type SPP80N06S2L-H5

2N06H5

Contextual Info: SPP80N06S2-H5 SPB80N06S2-H5 OptiMOS =Power-Transistor Product Summary Feature
N-Channel
Enhancement mode
175°C operating temperature VDS 55 R DS on 5.5 m
ID 80 A P- TO263 -3-2
Avalanche rated V P- TO220 -3-1
dv/dt rated Type SPP80N06S2-H5 Package

BAV99W

Abstract: H5 MARKING
Contextual Info: SEMICONDUCTOR BAV99W MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 H5 1 2 Item Marking Description Device Mark H5 BAV99W hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

BCW89

Abstract: H5 MARKING
Contextual Info: SEMICONDUCTOR BCW89 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 H5 1 2 Item Marking Description Device Mark H5 BCW89 hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

2N06H5

Contextual Info: SPP80N06S2-H5 SPB80N06S2-H5 Preliminary data OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 5.5 mΩ ID 80 A • Enhancement mode • 175°C operating temperature • Avalanche rated P-TO263-3-2 P-TO220-3-1 • dv/dt rated

Contextual Info: H5 Ball Bearing Optical Shaft Encoder Page 1 of 6 Description The H5 series ball bearing optical shaft encoder has a molded polycarbonate housing and utilizes either a 5-pin or 10-pin finger-latching connector. This noncontacting rotary to digital converter is designed to provide digital feedback

DIODE H5 SMD

Abstract: 2n06h5 smd diode H5 70H100 ANPS071E SPB80N06S2-H5 SPP80N06S2-H5
Contextual Info: SPP80N06S2-H5 SPB80N06S2-H5 OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • 175°C operating temperature VDS 55 V RDS on 5.5 mΩ ID 80 A P- TO263 -3-2 • Avalanche rated P- TO220 -3-1 • dv/dt rated Type Package

2N06LH5

Contextual Info: SPP80N06S2L-H5 SPB80N06S2L-H5 Preliminary data OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 5 mΩ ID 80 A • Enhancement mode • 175°C operating temperature • Avalanche rated P-TO263-3-2 P-TO220-3-1 • dv/dt rated

2N06LH5

Contextual Info: SPP80N06S2L-H5 SPB80N06S2L-H5 Preliminary data OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 5 mΩ ID 80 A • Enhancement mode • 175°C operating temperature • Avalanche rated P-TO263-3-2 P-TO220-3-1 • dv/dt rated

26c32

Abstract: marking e5 5Pin
Contextual Info: H5 Ball Bearing Optical Shaft Encoder Page 1 of 5 Description The H5 series ball bearing optical shaft encoder has a molded polycarbonate housing and utilizes either a 5-pin or 10-pin finger-latching connector. This noncontacting rotary to digital converter is designed to provide digital feedback

2N06LH5

Abstract: smd diode marking G12 TRANSISTOR SMD MARKING CODE h5 DIODE H5 SMD smd marking g12 H5 SMD H5 smd diodE smd H5 T ANPS071E IPB80N06S2L-H5
Contextual Info: IPB80N06S2L-H5 IPP80N06S2L-H5 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 4.7 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

2N06H5

Abstract: smd marking g24 DIODE H5 SMD ANPS071E IPB80N06S2-H5 IPP80N06S2-H5 PG-TO263-3-2 2N06
Contextual Info: IPB80N06S2-H5 IPP80N06S2-H5 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 5.2 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

2N06H5

Abstract: ANPS071E SPB80N06S2-H5 SPP80N06S2-H5
Contextual Info: SPP80N06S2-H5 SPB80N06S2-H5 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 5.5 mΩ ID 80 A • 175°C operating temperature • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated Type Package

55b7

Abstract: LG 7CA cxa75
Contextual Info: 3C= '.? @Y\R>@Cb ' : .99' 64;.9 >.;?6?@<> % ><1 A0@' A: : .>E 7NJ\]ZN[ ) ;J T  H5@ ) 7<5BB9@ ' ;J"_^#$]Qg T B<5B79A 9BGA C89 T . HD9E' C;=7 @9I9@   0 E5G98 *( L ) >J   0 /( ]" ) >J   0 )( $; *&) 7 T  I5@5B7<9 E5G98 T , H5@=:=98 577CE8=B; GC 

marking 7ca

Abstract: 55b7 57gi C89T
Contextual Info: 3C=*'-? $ =@6" $ ' F ' : .99' 64;.9 >.;?6?@<> % ><1 A0@' A: : .>E 7NJ\]ZN[ ;J T  H5@ ) 7<5BB9@ ' ;J"_^#$]Qg T B<5B79A 9BGA C89 T ' C;=7 @9I9@   0 E5G98 +( L ) >J 0 -/ ]" ) >J   0 1+ $; *&+ 7 T  I5@5B7<9 E5G98 T , H5@=:=98 577CE8=B; GC  + " /. * + 

89EB

Contextual Info: 3C= +? @Y\R>@Cb ' : .99' 64;.9(>.;?6?@<> % ><1 A0@' A: : .>E 7NJ\]ZN[ ) ;J T  H5@ ) 7<5BB9@ ' ;J"_^#$]Qg T B<5B79A 9BGA C89 T . HD9E' C;=7 @9I9@   0 E5G98 *( L ) >J   0 ),( ]" ) >J   0 *-( $; )&- 7 T  I5@5B7<9 E5G98 T , H5@=:=98 577CE8=B; GC 

55b7

Abstract: C89T marking BM marking A9
Contextual Info: 3B=* ,@ # <?5" # & E $ & 9 -88& 53: -8 '=-: >5>?;= $ =;0@/?& @9 9 -=D 7MI[\YMZ ;J T  H5@ + 7<5BB9@ ' ;J"_^#$]Qg T B<5B79A 9BGA C89 %+( L ) >J 0 )-( ]" ) >J   0 */( $; T ' C;=7 @9I9@   0 E5G98 %)&- 7 T  I5@5B7<9 E5G98 G>%KJFG%. T , H5@=:=98 577CE8=B; GC 

LG 7CA

Abstract: 8CJB cxa75 marking 7CA
Contextual Info: 3C= ',? @Y\R>@Cc ' : .99' 64;.9 >.;?6?@<> % ><1 A0@' A: : .>E 7NJ\]ZN[ ) ;J T  H5@ ) 7<5BB9@ ' ;J"_^#$]Qg T B<5B79A 9BGA C89 T . HD9E' C;=7 @9I9@   0 E5G98 *( L ) >J   0 -( ]" ) >J   0 0- $; *&- 7 T  I5@5B7<9 E5G98 T , H5@=:=98 577CE8=B; GC 

LG 7CA

Contextual Info: 3B= ,@ # <?5" # & E $ & 9 -8 8& 53: -8'=-: >5>?;= $ =;0@/?& @9 9 -=D 7MI[\YMZ ) ;J T  H5@ + 7<5BB9@ ' ;J"_^#$]Qg T B<5B79A 9BGA C89 T . HD9E' C;=7 ' 9I9@   0 E5G98 %*( L ) >J   0 )-( ]" ) >J   0 *0( $; %)&- 7 T  I5@5B7<9 E5G98 G>%KJFG. T , H5@=:=98 577CE8=B; GC 

DMA364A3

Contextual Info: DMA364A3 Tentative Total pages page DMA364A3 Silicon PNP epitaxial planar type Tr1 Silicon PNP epitaxial planar type (Tr2) For digital circuits Marking Symbol : H5 Package Code : SSSMini6-F2-B Internal Connection 6 Absolute Maximum Ratings Ta = 25 °C

TFS246H

Abstract: TFS246H5
Contextual Info: Filename: tfs246h5.doc version 1.1 VI TELEFILTER 08.05.2002 Filter Specification TFS 246 H5 1/5 Measurement condition °C dBm Ambient temperature: 23 Input power level: Terminating impedances * Input: Output: External coil: 400 Ohm ║ -2,4 pF 400 Ohm ║ -2,4 pF

BC 104 capacitor

Abstract: vishay capacitors lead spacing Vishay Capacitor marking VISHAY MARKING VISHAY MARKING CODE Vishay capacitor code marking BC 104 capacitor capacitance LOGO marking CODE Wb vishay body marking
Contextual Info: Dimensions and Marking Vishay Multilayer Ceramic Dipped Radial Capacitors 50 VDC, 100 VDC, 200 VDC and 500 VDC DIMENSIONS Wb T Wb H H SH SH L L 5.0 ± 0.8 2.5 ± 0.8 L2 H5 Component outline for lead spacing 2.5 mm ± 0.8 mm straight leads Component outline for