H5DU5182 Search Results

Contextual Info: 512Mb DDR SDRAM H5DU5182EFR-xxI H5DU5162EFR-xxI This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.1 / Feb. 2011

H5DU5162EFR

Abstract: DDR200 DDR266A DDR266B DDR333 DDR400 DDR500
Contextual Info: 512Mb DDR SDRAM H5DU5182EFR-xxI H5DU5162EFR-xxI This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 / Nov. 2009

H5DU5162ETR-XXI

Abstract: H5DU5182ETR DDR200 DDR266A DDR266B DDR333 DDR400 DDR500 H5DU5162ETR H5DU5182ETR-xxI
Contextual Info: 512Mb DDR SDRAM H5DU5182ETR-xxI H5DU5162ETR-xxI This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 / Nov. 2009

Contextual Info: Data Sheet Rev.1.1 09.02.2010 1024MB DDR SDRAM SoDIMM 200Pin SO-DIMM Features: SDN01G64L1BE2HY-50R 1 200-pin 64-bit Small Outline Dual-In-Line. Double Data Rate synchronous DRAM Module for industrial applications 1 DDR-SDRAM component base: Hynix H5DU5182EFR die rev.: E

H5DU5182EFR-XXC

Abstract: H5DU5182EFR
Contextual Info: 512Mb DDR SDRAM H5DU5182EFR H5DU5162EFR This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.1 / Feb. 2011

Contextual Info: Data Sheet 512MB DDR Rev.1.2 15.11.2010 SDRAM SoDIMM 200 PIN SO-DIMM Features: SDN06464D1BE1HY-xxR • 200-pin 64-bit Small Outline Dual-In-Line. Double Data Rate synchronous DRAM Module for industrial applications • DDR-SDRAM component base: Hynix H5DU5182EFR die rev.: E

H5DU5162ETR

Abstract: H5DU5182ETR H5DU5162 H5DU5182 1H5du5182etr DDR200 DDR333 DDR400 DDR500 H5DU5162ET
Contextual Info: 512Mb DDR SDRAM H5DU5182ETR H5DU5162ETR This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 / Nov. 2009

H5DU5182EFR

Abstract: DDR200 DDR266A DDR333 DDR400 DDR500 H5DU5162EFR H5DU5162
Contextual Info: 512Mb DDR SDRAM H5DU5182EFR H5DU5162EFR This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 / Nov. 2009

H5DU5162ETR

Contextual Info: 512Mb DDR SDRAM H5DU5182ETR H5DU5162ETR This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 / Nov. 2009

Contextual Info: 512Mb DDR SDRAM H5DU5182ETR-xxI H5DU5162ETR-xxI This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 / Nov. 2009

Contextual Info: Data Sheet 512MB DDR Rev.1.2 15.11.2010 SDRAM SoDIMM 200 PIN SO-DIMM Features: SDN06464D1BE1HY-xxR • 200-pin 64-bit Small Outline Dual-In-Line. Double Data Rate synchronous DRAM Module for industrial applications • DDR-SDRAM component base: Hynix H5DU5182EFR die rev.: E

Contextual Info: Data Sheet Rev.1.0 02.04.2009 1024MB DDR – SDRAM DIMM 184PIN DIMM Features: SDU01G64H3BE2HY-50R 1024MB PC-3200 in TSOP Technique RoHS compliant Options: 1 Frequency / Latency DDR 400 MHz CL3 DDR 333 MHz CL2.5 1 Module densities 1024MB with 16 dies and 2 ranks

Contextual Info: Data Sheet Rev.1.1 22.02.2010 512MB DDR1 – SDRAM SO-DIMM Features: Features: 1 200-pin 64-bit Small Outline, Dual-In-Line Double 200 PIN SO-DIMM SDN06464K1BE1HY-50R 1 512MB DDR PC3200 1 1 TSOP Technique RoHS compliant Options: 1 Frequency / Latency DDR 400 MHz CL3

Contextual Info: Data Sheet Rev.1.0 13.01.2010 512MB DDR – SDRAM DIMM 184PIN DIMM Features: SDU06464B5BE1HY-50R 512MB PC-3200 in TSOP Technique RoHS compliant Options: 1 Frequency / Latency DDR 400 MHz CL3 DDR 333 MHz CL2.5 1 Module densities 512MB with 8 dies and 1 rank

H5DU5162ETR-XXI

Contextual Info: 512Mb DDR SDRAM H5DU518 6 2ETR-xxC H5DU518(6)2ETR-xxI H5DU518(6)2ETR-xxL H5DU518(6)2ETR-xxJ This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

H5DU5162

Abstract: H5DU5182 H5DU518 H5DU5182EFR-XXC H5DU
Contextual Info: 512Mb DDR SDRAM H5DU518 6 2EFR-xxC H5DU518(6)2EFR-xxI H5DU518(6)2EFR-xxL H5DU518(6)2EFR-xxJ This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: Data Sheet Rev.1.1 01.04.2010 1024MB DDR SDRAM SoDIMM 200Pin SO-DIMM Features: SDN01G64D1BE2HY-50R 1024MB DDR PC-3200 in FBGA Technique RoHS compliant Options: • Frequency / Latency DDR 400 MHz CL3 DDR 333 MHz CL2.5 DDR 266 MHz CL2.5 • Module densities