H5N25 Search Results

H5N2501LD

Abstract: H5N2501LM H5N2501LS H5N2501LSTL-E PRSS0004AE-A PRSS0004AE-C Package Code 22
Contextual Info: H5N2501LD, H5N2501LS, H5N2501LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1250-0200 Rev.2.00 Jul.21,2005 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B

Contextual Info: Preliminary Datasheet H5N2501LD, H5N2501LS, H5N2501LM Silicon N Channel MOS FET High Speed Power Switching R07DS0056EJ0300 Previous: REJ03G1250-0200 Rev.3.00 Jul 23, 2010 Features • Low on-resistance RDS(on) = 0.14  typ. (at ID = 9 A, VGS = 10 V, Ta = 25C)

Hitachi DSA0076

Abstract: H5N2503P
Contextual Info: H5N2503P Silicon N Channel MOS FET High Speed Power Switching ADE-208-1374 Z 1st. Edition Mar. 2001 Features • • • • • Low on-resistance: R DS(on) = 0.04 typ. Low leakage current: IDSS = 1 µA max (at VDS = 250 V) High speed switching: tf = 190 ns typ (at VGS = 10 V, VDD = 125 V, ID = 25 A)

Hitachi MOSFET

Abstract: Hitachi DSA002730
Contextual Info: H5N2509P Silicon N-Channel MOSFET High-Speed Power Switching ADE-208-1378 Z 1st. Edition Mar. 2001 Features • • • • • Low on-resistance: R DS(on) = 0.053 Ω typ. (ID=15A, VGS=10V) Low drain cut-off current: IDSS = 1 µA max (at VDS = 250 V, VGS=0)

Hitachi DSA0076

Abstract: H5N2509P
Contextual Info: H5N2509P Silicon N Channel MOSFET High Speed Power Switching ADE-208-1378 Z Target Specification 1st. Edition Mar. 2001 Features • • • • • Low on-resistance Low leakage current High speed switching Low gate charge Avalanche ratings : RDS(on) = 0.053 Ω typ.

H5N2512FN-E

Abstract: H5N2512FN
Contextual Info: ` H5N2512FN Silicon N Channel MOS FET High Speed Power Switching REJ03G1767-0100 Rev.1.00 Jul 02, 2009 Features • • • • Low on-resistance Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code: PRSS0003AB-A

h5n2507p

Contextual Info: Preliminary Datasheet H5N2507P R07DS0877EJ0200 Previous: RJJ03G0646-0100 Rev.2.00 Sep 12, 2012 250V - 50A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.04  typ. (at ID = 25 A, VGS= 10 V, Ta = 25°C)  Low leakage current

Contextual Info: Preliminary Datasheet H5N2504DL, H5N2504DS R07DS0399EJ0300 Previous: REJ03G1106-0200 Rev.3.00 May 16, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • • • • • Low on-resistance Low leakage current High speed switching Low gate charge

H5N2509P

Abstract: H5N2509P-E PRSS0004ZE-A SC-65
Contextual Info: H5N2509P Silicon N Channel MOS FET High Speed Power Switching REJ03G1109-0200 Previous: ADE-208-1378 Rev.2.00 Sep 07, 2005 Features • • • • • Low on-resistance: R DS (on) = 0.053 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 250 V, VGS = 0 V)

Hitachi DSA0076

Abstract: H5N2510DL H5N2510DS Silicon N Channel MOS FET High Speed Power Switching dpak code
Contextual Info: H5N2510DL, H5N2510DS Silicon N Channel MOS FET High Speed Power Switching ADE-208-1379 Z Target Specification 1st. Edition Mar. 2001 Features • Low on-resistance • Low drive current • High speed switching Outline DPAK-2 4 4 1 2 D 3 H5N2510DS G 1 2

Hitachi DSA0076

Abstract: H5N2505DL H5N2505DS Silicon N Channel MOS FET High Speed Power Switching dpak code
Contextual Info: H5N2505DL, H5N2505DS Silicon N Channel MOS FET High Speed Power Switching ADE-208-1376 Z Target Specification 1st. Edition Mar. 2001 Features • Low on-resistance • Low drive current • High speed switching Outline DPAK-2 4 4 1 2 D 3 H5N2505DS G 1 2

FET 4900

Abstract: H5N2519P H5N2519P-E
Contextual Info: H5N2519P Silicon N Channel MOS FET High Speed Power Switching REJ03G0478-0200 Rev.2.00 Nov.19.2004 Features • Low on-resistance • Low leakage current • High speed switching Outline TO-3P D 1. Gate 2. Drain Flange 3. Source G S 1 2 3 Absolute Maximum Ratings

H5N2505DL

Abstract: H5N2505DL-E H5N2505DS H5N2505DSTL-E PRSS0004ZD-B PRSS0004ZD-C
Contextual Info: H5N2505DL, H5N2505DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1107-0300 Rev.3.00 Oct 16, 2006 Features • • • • • Low on-resistance Low drive current High speed switching Low gate change Avalanche ratings Outline RENESAS Package code: PRSS0004ZD-B

H5N2522LS

Abstract: H5N2522LSTL-E
Contextual Info: Preliminary Datasheet H5N2522LS R07DS0057EJ0200 Previous: REJ03G1667-0100 Rev.2.00 Jul 23, 2010 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.14  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  Low leakage current

dpak code

Abstract: H5N2510DL H5N2510DS H5N2510DSTL-E PRSS0004ZD-B PRSS0004ZD-C
Contextual Info: H5N2510DL, H5N2510DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1110-0200 Previous: ADE-208-1379 Rev.2.00 Sep 07, 2005 Features • Low on-resistance • Low drive current • High speed switching Outline RENESAS Package code: PRSS0004ZD-B

H5N2505DL

Abstract: H5N2505DL-E H5N2505DS H5N2505DSTL-E PRSS0004ZD-B PRSS0004ZD-C
Contextual Info: H5N2505DL, H5N2505DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1107-0200 Previous: ADE-208-1376 Rev.2.00 Sep 07, 2005 Features • Low on-resistance • Low drive current • High speed switching Outline RENESAS Package code: PRSS0004ZD-B

Hitachi DSA0076

Abstract: ADE-208-1377 H5N2508DL H5N2508DS
Contextual Info: H5N2508DL, H5N2508DS Silicon N Channel MOS FET High Speed Power Switching ADE-208-1377 Z 1st. Edition Mar. 2001 Features • • • • • Low on-resistance: R DS(on) = 0.48 typ. Low leakage current: IDSS = 1 µA max (at VDS = 250 V) High speed switching: tf = 11 ns typ (at VGS = 10 V, VDD = 125 V, ID = 3.5 A)

H5N2512CF

Abstract: H5N3007CF Diode BAY 32
Contextual Info: H5N2512CF Silicon N Channel MOS FET High Speed Power Switching REJ03G0481-0100 Rev.1.00 Nov.26.2004 Features • • • • Low on-resistance Low leakage current High Speed Switching Built-in fast recovery diode Outline TO-220CFM D 1. Gate 2. Drain 3. Source

H5N2503P

Abstract: a225
Contextual Info: H5N2503P Silicon N Channel MOS FET High Speed Power Switching ADE-208-1374A Z 2nd. Edition Jun. 2002 Features • Low on-resistance: RDS(on) = 0.04 Ω typ. • Low leakage current: IDSS = 1 µA max (at VDS = 250 V) • High speed switching: tf = 190 ns typ (at VGS = 10 V, VDD = 125 V, ID = 25 A)

Contextual Info: H5N2522FN Silicon N Channel MOS FET High Speed Power Switching REJ03G1573-0210 Rev.2.10 May 08, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A Package name: TO-220FN D 1. Gate

Contextual Info: Preliminary Datasheet H5N2522FP-E0-E 250V - 12A - MOS FET High Speed Power Switching R07DS0862EJ0100 Rev.1.00 Jul 27, 2012 Features • Low on-resistance RDS on = 0.13  typ. (at ID = 6 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching

H5N2514P

Abstract: H5N2514P-E PRSS0004ZE-A SC-65
Contextual Info: H5N2514P Silicon N Channel MOS FET High Speed Power Switching REJ03G1203-0100 Rev.1.00 May 25.2005 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A Package name: TO-3P D 1. Gate 2. Drain (Flange)

H5N2522FN

Abstract: H5N2522FN-E-T2
Contextual Info: H5N2522FN Silicon N Channel MOS FET High Speed Power Switching REJ03G1573-0210 Rev.2.10 May 08, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A Package name: TO-220FN D 1. Gate

H5N2513PL

Abstract: H5N2513PL-E PRSS0004ZF-A
Contextual Info: H5N2513PL Silicon N Channel MOS FET High Speed Power Switching REJ03G1243-0100 Rev.1.00 Jul 25, 2008 Features • Low on-resistance • High speed switching • Built-in fast recovery diode Outline RENESAS Package code: PRSS0004ZF-A Package name: TO-3PL