H7N0401LM Search Results

H7N0401LM Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
H7N0401LM		Renesas Technology	Silicon N Channel MOS FET		Original	PDF
H7N0401LM		Renesas Technology	MOSFET, Switching; VDSS (V): 40; ID (A): 95; Pch : 100; RDS (ON) typ. (ohm) @10V: 0.0031; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0048]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 9300; toff ( us) typ: 0.13; Package: LDPAK (S)- (2)		Original	PDF

H7N0401LM Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Hitachi DSA00280 Contextual Info: H7N0401LD, H7N0401LS, H7N0401LM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1527C Z 4th. Edition May 2002 Features • Low on-resistance RDS(on) = 3.1 mΩ typ. • 4.5 V gate drive devices • High Speed Switching Outline LDPAK 4 4 4 D	Original	H7N0401LD, H7N0401LS, H7N0401LM ADE-208-1527C H7N0401LS H7N0401LD Hitachi DSA00280	PDF
H7N0401LD Abstract: H7N0401LD-E H7N0401LM H7N0401LS PRSS0004AE-A PRSS0004AE-C Contextual Info: H7N0401LD, H7N0401LS, H7N0401LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1129-0500 Previous: ADE-208-1527C Rev.5.00 Apr 07, 2006 Features • Low on-resistance RDS (on) = 3.1 mΩ typ. • 4.5 V gate drive devices • High Speed Switching	Original	H7N0401LD, H7N0401LS, H7N0401LM REJ03G1129-0500 ADE-208-1527C) PRSS0004AE-A PRSS0004AE-B H7N0401LD H7N0401LS PRSS0004AE-C H7N0401LD H7N0401LD-E H7N0401LM H7N0401LS PRSS0004AE-A PRSS0004AE-C	PDF
H7N0401LD Abstract: H7N0401LD-E H7N0401LM H7N0401LS PRSS0004AE-A PRSS0004AE-C Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
H7N0401LD Abstract: H7N0401LM H7N0401LS Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog	Original	D-85622 D-85619 H7N0401LD H7N0401LM H7N0401LS	PDF
rjp3053 Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5	Original	REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009	PDF