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    HALL EFFECT 5VDC Search Results

    HALL EFFECT 5VDC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    HALL EFFECT 5VDC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Technologies GmbH & Co. KG CYTY108A InSb HALL-EFFECT ELEMENT Hall-effect element CYTY108A is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage


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    PDF CYTY108A CYTY108A 40DERING 10sec 300g/30sec 200pF, D-85464

    Untitled

    Abstract: No abstract text available
    Text: Technologies GmbH & Co. KG CYTY302B InSb HALL-EFFECT ELEMENT Hall-effect element CYTY302B is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage


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    PDF CYTY302B CYTY302B 40LDERING 10sec 300g/30sec 200pF, D-85464

    Untitled

    Abstract: No abstract text available
    Text: Technologies GmbH & Co. KG CYTY300B InSb HALL-EFFECT ELEMENT Hall-effect element CYTY300B is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage


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    PDF CYTY300B CYTY300B D-85464

    Untitled

    Abstract: No abstract text available
    Text: Technologies GmbH & Co. KG CYTY322B InSb HALL-EFFECT ELEMENT Hall-effect element CYTY322B is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage


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    PDF CYTY322B CYTY322B 40LDERING 10sec 300g/30sec 200pF, D-85464

    CYSH12AF

    Abstract: No abstract text available
    Text: Technologies GmbH & Co. KG CYSH12AF InSb HALL-EFFECT ELEMENT Hall-effect element CYSH12AF is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage output. It


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    PDF CYSH12AF CYSH12AF CYTY101A. 10sec 300g/30sec 200pF, D-85464

    CTG-102EES

    Abstract: CTG-252FSX5 CTG-152EESX5 CTG-252 PS-4753 CTG4 ctg-152Hs
    Text: OSI HALL-EFFECT CURRENT transducer DESCRIPTION MODEL Current Sensor with Output Amplifier 5Vdc or 10Vdc Outputs CTG- The CTG Current Transducer is a Hall-effect sensor integrated with an output amplifier. The CTG series offers a number of current ranges, outputs and sensor dimensions. Hall-effect current measurement is a non-contact technique


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    PDF 10Vdc CTG-102EES CTG-252FSX5 CTG-152EESX5 CTG-252 PS-4753 CTG4 ctg-152Hs

    AIR FLOW DETECTOR LM339

    Abstract: 2505 hall ic 249-4700 lm339 sensor 1N4004 2N2222A 2N2905 2N4444 LM124 LM339
    Text: Issued March 1999 249-4700 Data Pack E Hall effect devices Data Sheet Hall effect ic switch RS stock no. 307-446 A miniature semi-conductor proximity switch utilising the Hall effect to give 'bounce-free' switching when influenced by a magnetic field. A magnet is supplied


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    304-267

    Abstract: 2N4444 equivalent hall effect 5vdc rs 304-267 RS 2n4444 transistor 2N4444 DC MOTOR DRIVE WITH LM339 307-446 2N2222A LM124
    Text: Issued November 1994 018-613 Data Pack E Hall effect devices Data Sheet Hall effect ic switch RS stock no. 307-446 A miniature semi-conductor proximity switch utilising the Hall effect to give 'bounce-free' switching when influenced by a magnetic field. A magnet is supplied


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    AIR FLOW DETECTOR LM339

    Abstract: 304-267 hall effect 5vdc p2k7 vane air flow sensor vane air flow sensor automotive 2N444 Hall sensor LM339 thyristor mtg 100A
    Text: Issued March 2001 249-4700 Data Pack E Hall effect devices Data Sheet Hall effect ic switch RS stock no. 307-446 A miniature semi-conductor proximity switch utilising the Hall effect to give 'bounce-free' switching when influenced by a magnetic field. A magnet is supplied


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    hall effect 5vdc

    Abstract: 249-4700 RS Components 304-267 "hall effect" 18 612 2505 hall ic 2N4444 equivalent 1N4004 2N2222A 2N2905 LM124
    Text: Issued July 1997 249-4700 Data Pack E Hall effect devices Data Sheet Hall effect ic switch RS stock no. 307-446 A miniature semi-conductor proximity switch utilising the Hall effect to give 'bounce-free' switching when influenced by a magnetic field. A magnet is supplied


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    CYSJ362A

    Abstract: No abstract text available
    Text: ChenYang Technologies GmbH & Co. KG CYSJ362A GaAs HALL-EFFECT ELEMENTS CYSJ362A series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology.


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    PDF CYSJ362A THS119, KSY14 KSY44 D-85464

    J1939

    Abstract: No abstract text available
    Text: MS series Mid-size Hall effect joysticks The MS Series joystick is a contactless, Hall effect controller developed for demanding operator control applications requiring a rugged, yet compact hand-operated positioning device. Available with several ergonomic multi-axes


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    PDF J1939 30VDC 5-30VDC

    gaussmeter probe

    Abstract: PSRI STB1X-0201 gaussmeter hall effect 5vdc
    Text: 5100 Series Hall Effect Gauss / Tesla Meters The 5100 Series Hall effect portable gaussmeters represent the most recent design from the world leader in magnetic measuring equipment. This new design incorporates the use of digital signal processing technology


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    PDF w/5170) STB1X-0201 MOS51-3204 YA-111 110VAC 220VAC gaussmeter probe PSRI gaussmeter hall effect 5vdc

    CYTHS124

    Abstract: No abstract text available
    Text: ChenYang Technologies GmbH & Co. KG CYTHS124 GaAs HALL-EFFECT ELEMENTS CYTHS124 Hall-effect element is a ion-implanted magnetic field sensor made of mono-crystal gallium arsenide GaAs semiconductor material group III-V using ion-implanted technology. It can


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    PDF CYTHS124 D-85464

    joystick hall

    Abstract: J1939 cable DEUTSCH DT04
    Text: HT series Ruggedized Hall effect joysticks The HT Series joystick is a long life cycle, Hall effect controller providing reliable multi-axes finger positioning control. Available in single, dual, and triple axes configurations, HT Series joysticks are ideal for harsh


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    PDF J1939 30VDC 5-30VDC joystick hall J1939 cable DEUTSCH DT04

    Untitled

    Abstract: No abstract text available
    Text: HF series Hall effect joysticks an APEM Group Company The HF joystick is a contactless, multi-axes controller providing long life finger positioning control. Featuring non-contact Hall effect technology while utilizing minimal mounting depth, the HF joystick is designed for


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    PDF 30VDC 5-30VDC

    DEUTSCH DT04

    Abstract: DT04-6P DT04-3P 4 pin hall throttle sensor AMP 120 pin connector Metri-Pack 150.2 deutsch 6 pin connector model AMP Superseal 1.5 4 pin dt06-3s 282087-1
    Text: 9960 Series Hall Effect Rotary Position Sensor BEI Sensors BEI Sensors’ Model 9960 Hall effect rotary position sensors are available in numerous standard configurations with fast, one week delivery. Available configurations include 7 termination options, single or dual outputs and 24 active


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    PDF DT04-6P DT04-3P DT06-6S DT06-3S DEUTSCH DT04 4 pin hall throttle sensor AMP 120 pin connector Metri-Pack 150.2 deutsch 6 pin connector model AMP Superseal 1.5 4 pin 282087-1

    APEM HFX Series

    Abstract: HFX Joystick an 132 hall sensor
    Text: HFX series I First generation Hall effect joysticks an APEM Group Company The HFX Series I Joystick is designed for precision finger operated applications requiring proportional control and long trouble-free life. Featuring non-contacting Hall effect technology for three million lifecycle


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    PDF 30VDC 5-30VDC APEM HFX Series HFX Joystick an 132 hall sensor

    DEUTSCH DT04

    Abstract: Metri-Pack 150.2 tyco 282105-1 4 pin hall throttle sensor 12162182 DT04-6P AMP Superseal 1.5 3 pin AMP Superseal 1.5 AMP Superseal 1.5 4 pin AMP Superseal 1.5 2 pin
    Text: 9960 Series Hall Effect Rotary Position Sensor BEI Sensors BEI Sensors’ Model 9960 Hall effect rotary position sensors are available in numerous standard configurations with fast, one week delivery. Available configurations include 7 termination options, single or dual outputs and 24 active


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    PDF DT04-6P DT04-3P DT06-6S DT06-3S DEUTSCH DT04 Metri-Pack 150.2 tyco 282105-1 4 pin hall throttle sensor 12162182 AMP Superseal 1.5 3 pin AMP Superseal 1.5 AMP Superseal 1.5 4 pin AMP Superseal 1.5 2 pin

    Thumbwheel switch linear single

    Abstract: hall effect 5vdc J1455 14Hz J1113-22 life electronics sae J1113-22 IP68S MIL-810F switch THUMBWHEEL
    Text: PROPORTIONAL OUTPUT THUMBWHEEL HTW HALL EFFECT THUMBWHEEL 3 MILLION CYCLE ROTATIONAL LIFE HALL EFFECT Standard Characteristics/Ratings: Paddle Wheel Style MECHANICAL: Mechanical Life: 3,000,000 full forward to full back Mechanical Detent Cycle Life Per Detent: 100,000 detent @ +/- 21°, full travel is +/- 30° max


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    CY-P15A

    Abstract: hall sensor P15A hall sensor sot143
    Text: Technologies GmbH & Co. KG Hall Effect Sensor CY-P15A CY-P15A Hall Effect Sensor is outstanding for its Ultra-High sensitivity and its low temperature coefficients. This sensor is made by using the technique of Molecular Beam Epitaxy MBE , which provides excellent uniformity and reproducibility.


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    PDF CY-P15A CY-P15A 000V/AT) OT-143 D-85464 hall sensor P15A hall sensor sot143

    Untitled

    Abstract: No abstract text available
    Text: AC/DC Hall Effect Current Transducer DIN RAIL / PANEL MOUNT, TRACING OUTPUT The CR5400 Series, AC/DC Hall Effect Current Transducers, are designed to provide a bipolar output that proportionally reflects traces the waveform of the input current. These devices are specifically targeted to be used in applications


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    PDF CR5400 CR5410 CR5411 CRPS24VDC

    304-267

    Abstract: hall effect 5vdc hall effect vane sensor E18613 DC MOTOR DRIVE WITH LM339 lm339 motor control magnetic position sensor RS Components 304-267 magnetic sensor 21 L 307-446
    Text: Issued November 1994 E18613 Halleffectdevices Hall effect ic switch RS stock no. 307-446 A miniature semi-conductor proximity switch utilising the Hall effect to give 'bounce-free' switching when influenced by a magnetic field. A magnet is supplied which allows switching at distances of typically 2 mm.


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    PDF E18613 24Vdc 304-267 hall effect 5vdc hall effect vane sensor E18613 DC MOTOR DRIVE WITH LM339 lm339 motor control magnetic position sensor RS Components 304-267 magnetic sensor 21 L 307-446

    CYSJ106C

    Abstract: No abstract text available
    Text: ChenYang Technologies GmbH & Co. KG CYSJ106C GaAs HALL-EFFECT ELEMENTS CYSJ106C series Hall-effect element is a ion-implanted magnetic field sensor made of monocrystal gallium arsenide GaAs semiconductor material group Ⅲ-V using ion-implanted technology. It can convert a magnetic flux density signal linearly into voltage output.


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    PDF CYSJ106C D-85464