CYSH12AF Search Results
CYSH12AF Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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CYSH12AF
Abstract: ssf hall CYSH12 CYTY101A hall ssd HR100 3060S 1000HR sse hall
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CYSH12AF CYSH12AF CYTY101A. 30CYCLE 10sec 300g/30sec 200pF, D-85464 ssf hall CYSH12 CYTY101A hall ssd HR100 3060S 1000HR sse hall | |
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Contextual Info: Technologies GmbH & Co. KG CYSH12AF InSb HALL-EFFECT ELEMENT Hall-effect element CYSH12AF is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage output. It |
Original |
CYSH12AF CYSH12AF CYTY101A. 10sec 300g/30sec 200pF, D-85464 | |
CYSH12AFContextual Info: Technologies GmbH & Co. KG CYSH12AF InSb HALL-EFFECT ELEMENT Hall-effect element CYSH12AF is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage output. It |
Original |
CYSH12AF CYSH12AF CYTY101A. 10sec 300g/30sec 200pF, D-85464 |