T04 transistor SOT
Abstract: hall switch ignition SMD Hall C micronas hall 203 4 Pin SMD Hall sensors HAL320 hall chip smd hall current sensor 3A sensor hall 4.5 24 pulse 300C
Text: MICRONAS Edition July 15, 1998 6251-345-1DS HAL300 Differential Hall Effect Sensor IC MICRONAS HAL300 Differential Hall Effect Sensor IC in CMOS technology Introduction The HAL 300 is a differential Hall switch produced in CMOS technology. The sensor includes 2 temperaturecompensated Hall plates 2.05 mm apart with active offset compensation, a differential amplifier with a Schmitt
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6251-345-1DS
HAL300
OT-89B
OT-89A
SPGS0022-5-B3/1E
T04 transistor SOT
hall switch ignition
SMD Hall C
micronas hall 203
4 Pin SMD Hall sensors
HAL320
hall chip smd
hall current sensor 3A
sensor hall 4.5 24 pulse
300C
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HAL320
Abstract: 300C 300E HAL300 HAL300SO HAL300UA HAL300UA-E IEC68-2-20 hall switch ignition T04 transistor SOT
Text: MICRONAS Edition July 15, 1998 6251-345-1DS HAL300 Differential Hall Effect Sensor IC MICRONAS HAL300 Differential Hall Effect Sensor IC in CMOS technology Introduction The HAL 300 is a differential Hall switch produced in CMOS technology. The sensor includes 2 temperaturecompensated Hall plates 2.05 mm apart with active offset compensation, a differential amplifier with a Schmitt
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6251-345-1DS
HAL300
HAL320
300C
300E
HAL300
HAL300SO
HAL300UA
HAL300UA-E
IEC68-2-20
hall switch ignition
T04 transistor SOT
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MICRONAS INTERMETALL HAL556, HAL566 Hall Effect Sensor ICs MICRONAS Edition April 29, 1997 6251-425-1PD HAL556, HAL566 PRELIMINARY DATA SHEET Hall Effect Sensor IC in CMOS technology Designation of Hall Sensors HALXXXPP-T Temperature Range: E or C
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HAL556,
HAL566
6251-425-1PD
O-92UA,
OT-89A
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MICRONAS INTERMETALL HAL300 Differential Hall Effect Sensor IC MICRONAS Edition May 7, 1997 6251-345-4PD HAL300 Differential Hall Effect Sensor IC in CMOS technology Release Notes: Revision bars indicate significant changes to the previous edition.
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HAL300
6251-345-4PD
HAL300S,
HAL300UA
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HAL320
Abstract: 320C HAL320UA-E IEC68-2-20 TO-92UA
Text: MICRONAS Edition July 15, 1998 6251-439-1DS HAL320 Differential Hall Effect Sensor IC MICRONAS HAL320 Differential Hall Effect Sensor IC in CMOS technology Introduction – reverse-voltage protection of VDD-pin – short-circuit protected open-drain output by thermal
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6251-439-1DS
HAL320
HAL320
320C
HAL320UA-E
IEC68-2-20
TO-92UA
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sot-89b
Abstract: HAL320 hall switch ignition HALL Sensor TO92UA temperature sensor TOP marking X1 sot89b
Text: MICRONAS Edition July 15, 1998 6251-439-1DS HAL320 Differential Hall Effect Sensor IC MICRONAS HAL320 Differential Hall Effect Sensor IC in CMOS technology Introduction – reverse-voltage protection of VDD-pin – short-circuit protected open-drain output by thermal
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6251-439-1DS
HAL320
OT-89B
OT-89A
SPGS0022-5-B3/1E
sot-89b
HAL320
hall switch ignition
HALL Sensor TO92UA
temperature sensor TOP marking X1
sot89b
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107 hall effect sensor
Abstract: 115c hall 115E HAL115 HAL115UA-E IEC68-2-20 HALL Sensor TO92UA open drain in hall effect sensor
Text: MICRONAS INTERMETALL HAL115 Hall Effect Sensor IC MICRONAS Edition May 7, 1997 6251-414-1DS HAL115 Hall Effect Sensor IC in CMOS technology Marking Code Type Temperature Range Features: E C – operates from 4.3 to 24 V supply voltage with reverse voltage protection
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HAL115
6251-414-1DS
115UA
107 hall effect sensor
115c hall
115E
HAL115
HAL115UA-E
IEC68-2-20
HALL Sensor TO92UA
open drain in hall effect sensor
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115c hall
Abstract: brushless dc motor speed control Hall 115C HAL115UA-E Hall-Effect-Sensor 115C 115E HAL115 IEC68-2-20 107 hall effect sensor
Text: MICRONAS INTERMETALL HAL115 Hall Effect Sensor IC MICRONAS Edition May 7, 1997 6251-414-1DS HAL115 Hall Effect Sensor IC in CMOS technology Marking Code Type Temperature Range Features: E C – operates from 4.3 to 24 V supply voltage with reverse voltage protection
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HAL115
6251-414-1DS
115UA
115c hall
brushless dc motor speed control Hall 115C
HAL115UA-E
Hall-Effect-Sensor 115C
115E
HAL115
IEC68-2-20
107 hall effect sensor
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"Linear Hall-effect Sensor"
Abstract: hal 1821 SMD Hall sensors linear D analog hall smd 4 pin Angle Sensors SMD Hall sensors HALL Sensor TO92UA SMD Hall sensors linear hall sensor smd "linear hall effect sensor"
Text: PRODUCT INFORMATION HAL 1821/1822/1823 July/2009 HAL 1821/1822/1823 Linear Hall-Effect Sensor Family The HAL 1821/1822/1823 are new members of the linear Hall-effect sensor family HAL 182x, offering excellent performance/ price trade-off. They are universal magnetic
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July/2009
PI000135
001EN
D-79108
D-79008
"Linear Hall-effect Sensor"
hal 1821
SMD Hall sensors linear D
analog hall smd 4 pin
Angle Sensors
SMD Hall sensors
HALL Sensor TO92UA
SMD Hall sensors linear
hall sensor smd
"linear hall effect sensor"
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smd hall effect sensor
Abstract: IC 1820 analog hall smd 4 pin HALL Sensor TO92UA hall effect interface WITH digital MICRONAS USB hall magnetic field current sensor HALL Sensor 1820 TO92UA hall sensors for magnetic measurements hall sensor smd
Text: PRODUCT INFORMATION HAL 1820 July/2009 HAL 1820 Programmable Linear Hall-Effect Sensor Family The HAL 1820 is a new member of the Micronas family of programmable linear Hall sensors. The HAL 1820 is a universal magnetic field sensor with a linear analog output based on
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July/2009
PI000129
002EN
D-79108
D-79008
smd hall effect sensor
IC 1820
analog hall smd 4 pin
HALL Sensor TO92UA
hall effect interface WITH digital
MICRONAS USB
hall magnetic field current sensor
HALL Sensor 1820 TO92UA
hall sensors for magnetic measurements
hall sensor smd
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506a hall
Abstract: hall effect transistor 502a SENSOR HALL 504A SENSOR HALL 505A 506A hall switch SENSOR HALL 508a 502a hall sensor hall 502a 506UA hall sensor 502a
Text: MICRONAS INTERMETALL HAL501.HAL506, HAL508 Hall Effect Sensor ICs MICRONAS Edition May 5, 1997 6251-405-1DS HAL501.HAL506 HAL508 Hall Effect Sensor IC in CMOS technology Common Features: – switching offset compensation at 62 kHz – operates from 3.8 V to 24 V supply voltage
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HAL501.
HAL506,
HAL508
6251-405-1DS
HAL506
506a hall
hall effect transistor 502a
SENSOR HALL 504A
SENSOR HALL 505A
506A hall switch
SENSOR HALL 508a
502a hall sensor
hall 502a
506UA
hall sensor 502a
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION HAL114 Hall Effect Sensor IC MICRONAS Edition May 5, 1997 6251-456-1AI HAL114 Hall Effect Sensor IC in CMOS technology Features: ADVANCE INFORMATION Marking Code Type Temperature Range A E C 114A 114E 114C – operates from 4.5 V to 24 V supply voltage
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HAL114
6251-456-1AI
HAL114S
HAL114UA
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IEC-68-2-58
Abstract: HAL114 HAL114UA-E IEC68-2-20 switch ic
Text: MICRONAS INTERMETALL HAL114 Unipolar Hall Switch IC MICRONAS Edition June 10, 1998 6251-456-1DS HAL114 Unipolar Hall Switch IC in CMOS technology Marking Code Type Temperature Range Introduction The HAL114 is a Hall switch produced in CMOS technology. The sensor includes a temperature-compensated
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HAL114
6251-456-1DS
HAL114
IEC-68-2-58
HAL114UA-E
IEC68-2-20
switch ic
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smd 2xY
Abstract: unipolar transistor magnetic sensor SMD Hall sensors Hall 221 micronas hall 203 SMD Hall C smd hall smd hall sensor hall smd magnetic flow meter
Text: PRODUCT INFORMATION HAL 2xy April/2009 HAL 2xy Low-Cost Hall-Effect Sensor Family The HAL 2xy Hall switch family is produced in CMOS technology. The sensors include a temperature-compensated Hall plate with active offset compensation, a comparator, and an open-drain output transistor.
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April/2009
PI000010
002EN
D-79108
D-79008
smd 2xY
unipolar transistor magnetic sensor
SMD Hall sensors
Hall 221
micronas hall 203
SMD Hall C
smd hall
smd hall sensor
hall smd
magnetic flow meter
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hall effect transistor 502a
Abstract: SENSOR HALL 505A SENSOR HALL 504A 502a hall sensor power supply ps 3003 hall 502a Y0401 Transistor 115e HAL506 hal556
Text: HAL1 15 Hall Effect Sensor IC Edition May 7, 1997 6251-414-1 OS INTERMETALL HAL115 Marking Code Hall Effect Sensor IC in CMOS technology Type Temperature Range Features: - operates from 4.3 to 24 V supply voltage with reverse voltage protection - operates with magnetic fields from DC to 20 kHz
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HAL115
6251-425-l
hall effect transistor 502a
SENSOR HALL 505A
SENSOR HALL 504A
502a hall sensor
power supply ps 3003
hall 502a
Y0401
Transistor 115e
HAL506
hal556
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HALL Sensor TO92UA
Abstract: to92ua Hall Effect Current Measurements hall effect sensor TO-92UA HAL105UA hall transistor HAL204 HALL EFFECT HAL100
Text: CMOS Sensors HAL1 OOS. HAL105S HAL1OOUA. HAL105UA Hall Effect Sensor ICs SOT-89A Plastic Package Hall Effect Sensor ICs (TO-92UA Plastic Package) These Hall effect sensor ICs are designed in CMOS technology and are used as sensors for speed measurement and revolution counting,
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HAL105S
HAL105UA
OT-89A
O-92UA
HAL100.
HAL105)
HAL105
HALL Sensor TO92UA
to92ua
Hall Effect Current Measurements
hall effect sensor
TO-92UA
HAL105UA
hall transistor
HAL204
HALL EFFECT
HAL100
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ED 89A diode
Abstract: No abstract text available
Text: HAL525 Hall Effect Sensor 1C in CMOS technology Specifications - switching type: latch Introduction The HAL525 is a Hall switch produced in CMOS technol ogy. The sensor includes a temperature-compensated Hall plate with active offset compensation, a Schmitt trig
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HAL525
HAL525
ED 89A diode
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Untitled
Abstract: No abstract text available
Text: HAL300 Differential Hall Effect Sensor 1C in CMOS technology Introduction The HAL300 is a differential Hall switch produced in CMOS technology. The sensor includes 2 temperaturecompensated Hall plates 2.05 mm apart with active off set compensation, a differential amplifier with a Schmitt
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HAL300
HAL300
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Hall sensors code K2
Abstract: force sensor piezo Micronas HA 24 hall effect sensor
Text: HAL300 Differential Hall Effect Sensor 1C in CMOS technology Introduction The H AL300 is a differential Hall switch produced in CMOS technology. The sensor includes 2 temperaturecompensated Hall plates 2.05 mm apart with active off set compensation, a differential amplifier with a Schmitt
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HAL300
HAL300
Hall sensors code K2
force sensor piezo
Micronas HA 24
hall effect sensor
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DD05215
Abstract: ADD1210
Text: A t* t '$ / PRELIM INARY DATA SHEET HAL115 Hall Effect Sensor IC à 4bfl2711 Ü005213 410 Edition June 30, 1995 6 2 5 1 -41 4-2 P D ITT Semiconductors ctors ITT HAL115 PRELIMINARY DATASHEET Hall Effect Sensor 1C in CMOS technology Marking Code Type Marking
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HAL115
6251-414-2PD
4tfl2711
DD05215
ADD1210
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itt ol 170
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET HAL300 Differential Hall Effect Sensor 1C A Edition June 14, 1995 62 5 1 -3 4 5 -3 P D 4bfl2711 QD0S231 43b ITT Semiconductors ITT HAL 300 PRELIMINARY DATA SHEET Differential Hall Effect Sensor 1C HAL 300 in CMOS technology Vsup Vsup
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HAL300
4bfl2711
QD0S231
itt ol 170
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET HAL115 Hall Effect Sensor IC à 4bfl2711 D00S213 410 • Edition June 30, 1995 6251-414-2PD "I I I II I | ITT Semiconductors - I I I HAL115 Hall Effect Sensor 1C in CMOS technology I PRELIMINARY DATASHEET Marking Code Release Notes: Revision bars indicate significant
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HAL115
4bfl2711
D00S213
6251-414-2PD
HAL115
115UA
OT-89A:
IEC68-2-58
O-92UA:
IEC68-2-20
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Micronas HA 24
Abstract: IEC-68-2-58
Text: HAL114 Unipolar Hall Switch IC in CMOS technology Marking Code Tern perature R«Jnge Type Introduction The HAL114 is a Hall switch produced in CMOS technol ogy. The sensor includes a temperature-compensated Hall plate, a Schmitt trigger, and an open-drain output
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HAL114
Micronas HA 24
IEC-68-2-58
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Untitled
Abstract: No abstract text available
Text: HAL114 Unipolar Hall Switch IC in CMOS technology Marking Code Type Introduction The HAL114 is a Hall switch produced in CMOS technol ogy. The sensor includes a temperature-compensated Hall plate, a Schmitt trigger, and an open-drain output transistor see Fig. 2 .
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HAL114
HAL114
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