HARRIS HM 6514 Search Results

HM-6514-9

Contextual Info: MbE ì> HARRIS SEMICOND SECTOR f f t H U U SEMICONDUCTOR A R R m *4305571 003^110 3 « H A S HM-6514 I S 10 24 x 4 CMOS RAM February 1992 Features Description • The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes

Contextual Info: HM-6514/883 HARRIS S E M I C O N D U C T O R 1 0 2 4 x 4 CMOS RAM January 1992 Features Description • This Circuit is Processed In Accordance to Mil-Std883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-6514/883 is a 1024 x 4 static CMOS RAM fabri­

Contextual Info: HM-6514/883 HARRIS S E M I C O N D U C T O R 1 0 2 4 x 4 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. The HM-6514/883 is a 1024 x 4 static CMOS RAM fabri­

6514

Contextual Info: HM-6514/883 HARRIS S E M I C O N D U C T O R 10 24 x 4 CMOS RAM January 1992 Description Features • This Circuit Is Processed in Accordance to Mil-Std883 and Is Fully Conform ant Under the Provisions of Paragraph 1.2.1. • Low Power S tan db y. 125|iW Max.

Contextual Info: a HM-6514 HARRIS S E M I C O N D U C T O R 1 0 2 4 x 4 C M O S RAM August 1996 Description Features Low Power Standby. 125|aW Max T he H M -6 5 1 4 is a 1024 x 4 static C M O S RAM fabricated using self-aligned silicon gate technology. The device utilizes

74c920

Abstract: ram 6164 6116 RAM 2116 ram 2064 ram 74C929 4016 RAM 4045 RAM 6264 cmos ram 74C930
Contextual Info: Industry CMOS RAM Cross Reference h a r r is c m o s ram s DESCRIPTION AMD HARRIS FUJ­ ITSU EDI HIT­ ACHI IDT M ITSU­ MOT­ BISHI OROLA N A T­ IONAL NEC RCA OKI TOSH* ISA SMOS NMOS, OTHER 1K CMOS RAMs 1Kx1, 16 Pin Synchronous HM-6508 1 Kx1, 18 Pin Synchronous

6514

Abstract: m6508 HM-6513 A3U-4 6513 HM-6505 HM-6512 HM-6514 6508 RAM a2712
Contextual Info: fW i HARRIS <ü SEM ICO N D U CTO R P R O D U C T S DIVISION HM-6514 A DIVISION OF H A R RIS CORPO RATION 1024 X 4 CM OS RAM Pinout Features T O P V IE W LOW PO W ER ST A N D B Y 250JUW M A X . L O W P O W E R O P E R A T IO N 35mW/MHz M A X . D A T A R E T E N T IO N

6508 RAM

Abstract: 1m x 8 CMOS RAM
Contextual Info: PAGE LOW VOLTAGE DATA RETENTION . 2-2 INDUSTRY CMOS RAM CROSS R EFEREN CE. 2-3 1K CMOS RAM DATA SHEETS

1-6514S-9

Contextual Info: H M -6514 h a r r is Ë S E M I C O N D U C T O R Ë Ë WË Ë 1 0 2 4 x 4 CMOS RAM March 1997 Features Description • Low Power Standby. 125|iW Max The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes

mi 6514

Abstract: 6514 HM3-6514-9 6514S 24502BVA 8102402VA 8102404VA HM1-6514-9 HM1-6514B-9 HM1-6514S-9
Contextual Info: HM-6514 S em iconductor 1 0 2 4 x 4 CMOS RAM March 1997 Description Features Low Power Standby. 125^iW Max The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes

6514

Abstract: HM65 6514 ram
Contextual Info: HM-6514/883 Semiconductor 1 0 2 4 x 4 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. The HM-6514/883 is a 1024 x 4 static CMOS RAM fabri­

TEN 4623

Abstract: 6514-9 ao514 hm6514-9
Contextual Info: S E M IC O N D SECTOR TS D E | 4 3 0 2 5 7 1 ^ D 0 1 0 b T l^ |~ / T-46-23-08 H M -6 5 1 4 h a r r is 1024 x 4 CMOS RAM Pinouts Features Low Power Standby. 125|iWMax. Low Power Operation.

Contextual Info: HARRIS H S E M I C O N D U C T O R M - 6 5 4 / 8 8 3 1 0 2 4 x 4 CM O S RAM August 1996 Features • 1 Description This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Low Power S tandby. 125^W Max

hm3-6514-9

Contextual Info: H /l/7 -6 5 7 4 h a r r is È S E M I C O N D U C T O R U U W U M 1024 X 4 CM O S RAM August 1996 Features Description • Low Power S ta n d b y . 125^W Max • Low Power O p e ra tio n . 35mW /MHz Max

HM-6514-9

Contextual Info: H M -6 5 1 4 SI HARRIS 1024 x 4 CMOS RAM Features Pinouts Low Power Max. Low Power O peration. 35mW/MHzMax. Data Retention. @2.0V Min.

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
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Contextual Info: 3J HARRIS H M -6 5 1 4 1 0 2 4 x 4 CMOS RAM Features Pinouts TOP VIEW • Low Power 25jiW Max. • • • • • • • • Low Power O peration. 35mW/MHz Max.

pin diagram AMD FX 9590

Abstract: Transistor AF 138 laser sharp measurement d6406 pby 283 diode data book SN74298
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74c920

Abstract: 74C929 74C930 1 phase SCR TRIGGER PULSE TRANSFORMER d8259ac zener chn 848 P8255 interfacing 8289 with 8086 HD-6402C-9 harris semiconductor cmos
Contextual Info: ADVANCED SEMICONDUCTOR DEVIC^S P T Y LTD y I JOHANNESBURG 2000 TEL. 802-5820 DIGITAL DATA BOOK Part of the Harris Spectrum of Integrated Circuits HARRIS $ 5 .0 0 1 9 8 4 Harris C M O S Digital Data Book Harris Semiconductor CMOS Digital Products Division's

TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated

Contextual Info: a H a r r is h M -6 1024 x 4 CMOS RAM June 1989 P in o u t F eatures • This Circuit is Processed in Accordance to M il-S td -8 8 3 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. • Low Power S ta n d b y 5 1 4 /8 8 3 HM 1 - 6 5 1 4 /8 8 3 C ER A M IC DIP

triac tag 8518

Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Contextual Info: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference

JRC 45600

Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Contextual Info: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES

information applikation

Abstract: Halbleiterbauelemente DDR U555C information applikation mikroelektronik VEB mikroelektronik "Mikroelektronik" Heft mikroelektronik DDR mikroelektronik Heft mikroelektronik applikation Transistoren DDR
Contextual Info: in n ilk a n í o J B lB t a L J I , L J n Í lH KáD Information Applikation Halbleiter Speicher Teil 1 SRAM [ n n ilk r a ^ e lE s k t s n a r iik Information Applikation HEFT 79- , HALBLEITERSPEiCHER TEIL li > < .1* • • r* - . SRAM * VEB Halbleiterwerk Frankfurt Oder