HM65 Search Results

HM658512LP-10V

Abstract: HM658512LP-12 HM658512-10 HM658512LP-8 HM658512LP10V HM658512 HM658512LP-10 HM658512DP-8 HM658512LFP-12 HM658512DP-10
Contextual Info: HM658512 Series Maintenance only 524288-word x 8-bit High Speed Pseudo Static RAM Features Ordering Information • Single 5 V ±10% • High speed – Access time CE access time: 80/100/120 ns – Cycle time Random read/write cycle time: 130/160/190 ns

HM-65262C-5

Abstract: 65262 HM65262 HM-65262 HM-65262C-9
Contextual Info: HM65262 16K x 1 Very Low Power CMOS SRAM Introduction The HM 65262 is a very low power CMOS static RAM organized as 16384 x 1 bits. It is manufactured using the MHS high performance CMOS technology. All inputs and outputs of the HM 65262 are TTL compatible and operate from single 5V supply thus

658512

Abstract: 658512A HM658512ALFP-8 Hitachi DSA00164
Contextual Info: HM658512A Series 4 M PSRAM 512-kword x 8-bit 2 k Refresh ADE-203-218C(Z) Rev. 3.0 Nov. 1997 Description The Hitac hi HM658512A is a C MOS pseudo static R AM orga nized 512-kw ord × 8-bit. It re alize s higher density, higher per forma nce and low powe r consumption by employing 0. 8 µm Hi-C MOS proc ess

Contextual Info: HM65-HC800LFTR13 High Current Low Profile SMD Inductor • • • Height 5.6mm Max. Footprint 13.5x12.5mm Max. RoHS compliant Specification @ 25°C • Inductance @ 100kHz, 100mV • DC Resistance • Rated Current 20% drop of inductance • Saturation Current (30% drop of inductance)

HM658512

Abstract: hitachi 1002 HM658512LP-12 HM658512LP-10V
Contextual Info: HM658512 Series 524288-Word x 8-Bit High Speed Pseudo Static RAM Features Ordering Information • Single 5 V ±10% • High speed - Access time C E access time: 80/85/KM1/120 ns - Cycle time Random read/write cycle time: 130/160/190 ns • Low power - 250 m W typ active

Contextual Info: HM658128 S e rie s -131,072-Word x 8-Bit High Speed Psuedo Static Ram The HM658128 Series has been converted to the HM658128A Series. 0 H IT A C H I 382 Hitachi America, Ltd. • Hitachi Plaza • 2000 Sierra Point Pkwy. • Brisbane, CA 94005-1819 • 415 589-8300

Contextual Info: HM658512A Series 4 M PSRAM 512-kword x 8-bit 2 k Refresh HITACHI ADE-203-218C(Z) Rev. 3.0 Nov. 1997 Description The Hitachi HM658512A is a CMOS pseudo static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 (Am Hi-CMOS process

Contextual Info: HM658128A Series 131,072-W ord x 8 -B it High S p eed Pseudo S tatic RA M I FEATURES Single 5V ±10% High speed Access time CE access time: 80/100/120 ns Cycle time Random read/write cycle time: 130/160/190 ns Low power 250 mW typ. Active 350 |iW typ. Standby (L-version, LL-version)

DE3005

Abstract: 1011S Matra-Harris
Contextual Info: european space agency agence spatiale européenne Pages 1 to 43 INTEGRATED CIRCUITS, SILICON MONOLITHIC, CMOS SILICON GATE, STATIC, 16K 16348 x 1 BIT ASYNCHRONOUS RANDOM ACCESS MEMORY WITH 3-STATE OUTPUTS, BASED ON TYPES HM65262 AND HM65262B ESA/SCC Detail Specification No. 9301/018

Contextual Info: 3.0 V & 3.3 V S u p p ly HM65V8512 Series 524288-Word x 8-Bit High Speed Pseudo Static RAM Description Ordering Information Type No. Access tim e HM65V8512DFP-12 120 ns HM65V8512DFP-15 150 ns HM65V8512LFP-12 120 ns HM65V8512LFP-15 150 ns HM65V8512LFP-12V 120 ns

8512DFP-15

Abstract: 8512DFP-12
Contextual Info: HM65W8512 Series Preliminary 524,286-word x 8-bit High Speed Pseudo Static RAM Description Ordering Information H M 65W 8512 is a p se u d o -sta tic R A M o rg a ­ n ized as 5 2 4 ,2 8 8 -w o rd X 8-b it. P o w er supply voltage is 3.3 V ± 0.3 V. H M 65W 8512 utilizes

HM65

Abstract: DP-32 HM658512A HM658512ALFP-7 HM658512ALFP-8 HM658512ALP-10 HM658512ALP-10V HM658512ALP-7 HM658512ALP-7V HM658512ALP-8
Contextual Info: HM658512A Series 524288-word x 8 -bit High Speed CMOS Pseudo Static RAM Rev. 2.0 Apr. 20, 1995 The Hitachi HM658512A is a CMOS pseudo static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 µm Hi-CMOS

Contextual Info: HLMP-HG65, HLMP-HM65, HLMP-HB65 Precision Optical Performance Red Green and Blue New 5mm Standard Oval LEDs Data Sheet Description Features These Precision Optical Performance Oval LEDs are specifically designed for full color/video and passenger information signs. The oval shaped radiation pattern and

HM65-H4R0

Abstract: HM656 tube 1R5
Contextual Info: MODEL HM65 SERIES NEW PRODUCT High Current Low Profile Surface Mount Inductors FEATURES AND BENEFITS • • • • • • • Closed magnetic circuit for high density board assembly High performance, low loss ferrite core is excellent for high frequency applications

Contextual Info: HM65V8512 Series 524288-Word x 8-Bit High Speed Pseudo Static RAM HM65V8512 is a pseudo-static RAM organized as 524,288-word x 8-bit. HM65V8512 realized low power consumption by employing 0.8 im CMOS process technology. Power supply voltage is 3 V ±10% and all inputs

HM658512ALFPI-10

Abstract: HM658512ALFPI-10V HM658512ALFPI-12 HM658512ALFPI-12V HM658512ALFPI-8V Hitachi DSA0044
Contextual Info: HM658512AI Series 4 M PSRAM 512-kword x 8-bit 2 k Refresh ADE-203-286C(Z) Rev. 3.0 March 15, 1999 Description The Hitachi HM658512AI is a 4-Mbit pseudo static RAM organized 524288-word × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 µm Hi-CMOS process

M5768

Abstract: hyundai HM6268P-45 HM65681-2 HM65681B-5 HM65681S-2
Contextual Info: - 40 - 16 K X i-âlÎicffl Si £ it £ OC TAAC nax ns) TCAC max (ns) HM6268P-45 HITACHI 0— 70 45 45 HM65681-2 MHS -55— 125 85 85 TOE max (ns) -/ TOH nin (ns) CMOS y * TOD nax (ns) y S t a t i c RAM (4 0 9 6 x 4 ) ft & T W n in (ns) TDS min (ns) 2 0 P I N 6 1 6 8

HM652568

Abstract: HM65256BLSP10 HM65256 HM65256BLP-12 HM65256BFP-10T HM65256BFP-12 HM65256BLP-10 65256B
Contextual Info: HM65256B Series 5 .0 V S u p p l y 32,768-word x 8-bit High Speed Psuedo Static RAM Features • Single 5 V ±10% • Access time — CE access time: 100/120/150/200 ns — Address access time: 50/60/75/100 ns (in static column mode) • Cycle time — Random read/write cycle time:

658512ALFP

Abstract: 658512 000nS
Contextual Info: HM658512AI Series 4 M PSRAM 512-kword x 8-bit 2 k Refresh HITACHI ADE-203-286C(Z) Rev. 3.0 March 15, 1999 Description The Hitachi HM658512AI is a 4-Mbit pseudo static RAM organized 524288-word x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 (Am Hi-CMOS process

HM658512LP-10

Abstract: hm658512lp HM658512LP-12 HM658512LP10 HM658512 NS16032 HM658512lfp HM658512LFP-10
Contextual Info: H T ACHI/ LOGIC/ARRAYS/MEM SIE D MMIhEOa G 0 1 fl2 GQ S Û T • H I T 2 HM658512 S e rie s -52 4,28 8-W o rd x 8 -B it H ig h S p e e d P s e u d o S ta tic R A M Features • Single 5 V ± 10% • Highspeed Access time 51 access t im e .80/100/120 ns

HM65256B-12

Abstract: HM65256 HM68 HM65256BLP-10 HM65256B-20 65256B
Contextual Info: HM65256B Series 32768-word X 8-bit High Speed Pseudo Static RAM • FEATURES HM65256BP Series • • Single 5V ±10% High Speed Access Time CE Access T im e . 100/120/150/200ns Address Access T im e .50/60/75/100ns

658128

Contextual Info: HM658128A Series 131072-word x 8-bit High Speed CMOS Pseudo Static RAM The Hitachi HM658128A is a pseudo-static RAM organized as 131,072-word x 8-bit. HM658128A realizes low power consum ption and high speed access time by employing 1.3 nm CMOS process technology.

658512AL

Abstract: cmkm trw 7841 658512A
Contextual Info: H M 658512A S e r ie s 5242&8~word x 8 -fait High S p e e d CMOS P se u d o Ita tic RAM H IT A C H I The H itachi HM658512A is a CM O S pseudo siarie R A M organized 512-kword x 8-bit It realizes higher density, higher performance and low power consum ption by em ploying 0.8 >un H i-CM O S

Contextual Info: 3.0 V & 3.3 V Supply HM65V8512 Series 524288-W ord X 8-B it High Speed Pseudo Static RAM Ordering Information Description Type No. Access time HM65V8512DFP-12 120 ns HM65V8512DFP-15 150 ns HM65V8512LFP-12 120 ns HM65V8512LFP-15 150 ns HM65V8512LFP-12V 120 ns