HB75D Search Results

IEC61204-3

Contextual Info: BTCPower TM HB75D-24 Series Broadband TelCom Power, Inc. Redefining “Current” Limits In Power Conversion 24Vin Dual Output 15/15A Half Bricks Description The HB75D-24 series of low cost DC/DC converters offer the different current levels and are comparable to existing

IEC61204-3

Contextual Info: BTCPower TM HB75D-48 Series Broadband TelCom Power, Inc. Redefining “Current” Limits In Power Conversion 48Vin Dual Output 15/15A Half Bricks Description The HB75D-48 series of low cost DC/DC converters offer the different current levels and are comparable to existing

btcpower

Abstract: IEC61204-3
Contextual Info: BTCPower TM Broadband TelCom Power, Inc. HB75D Series Redefining “Current” Limits In Power Conversion Dual Output 15/15A Half Bricks Description The HB75D series of low cost DC/DC converters offer the different current levels and are comparable to existing

Contextual Info: HY51V16400A Series HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY51V16400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: ><M y i l u n fi i H Y 5 1 V 4 4 1 O B S e r ie s 1M x 4-bit CMOS DRAM with Write-Per-Bit PREUMINARY DESCRIPTION The HY51V4410B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit with function of Write-Per-Bit. The HY51V4410B utilizes Hyundai's CMOS silicon gate process technology as well as advanced

TA 8825 AN

Abstract: 39B4 hyundai HYM532414AM-60 HYM532414AM HYM532414AM60
Contextual Info: “HY UNDAI HYM532414A M-Series 4M X 32-bit CMOS DRAM MODULE _ ;_ with EXTENDED DATA OUT DESCRIPTION The HYM532414A is a 4M x 32-bit EDO mode CMOS DRAM module consisting of eight HY5117404A in 24/26 pin SOJ or TSOPII on a 72pin giass-epoxy printed circuit board. 0.1 |iF and 0.01 iiFdecoupling capacitors are mounted

Contextual Info: •HYUNDAI SEMICONDUCTOR HYM594000A Series 4M X 9-bit CMOS DRAM MODULE DESCRIPTION The HYM594000A is a 4M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY5114100A In 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22^<F decoupling capacitor Is mounted for each DRAM.

Contextual Info: HYUNDAI H Y 5 1 V 1 7 4 0 0 A S e r ie s 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V17400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V17400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: •H YUND AI HY2316050 Series 2 M x 8 - b K / 1 M x 16-bit CMOS MASK ROM PRELIMINARY DESCRIPTION The HY2316050 is a 16Mbit mask-programmable ROM organized either as 2,097,152 x 8bit Byte mode or as 1,048,576 x 16bit (Word mode) depending on BHE level. It is fabricated using HYUNDAI’S advanced CMOS

Contextual Info: « Y I I I I VI A I I U HY29F400T/B Series I I 11 f t I 4 Megabit 5.0 volt-only Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase Ready//Busy - Minimizes system-level power requirements - RY//BY ourput pin for detection of programming or erase cycle completion

Contextual Info: HY67V16100/101 »HYUNDAI 64K x 16 Bit SYNCHRONOUS CMOS SRAM PRELIMINARY DESCRIPTION This device integrates high-speed 64Kx16 SRAM core, address registers, data input registers, a 2-bit burst address counter and pipelined output. All synchronous inputs pass through registers controlled by a positive-edge