Untitled
Abstract: No abstract text available
Text: Honeyw ell HC6664 Military Products Preliminary 8K x 8 RADIATION-HARDENED ROM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 jim Process • Typical 30 ns Access Time • Total Dose Hardness through 1x10 rad Si02 • Low Operating Power
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OCR Scan
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1x10u
1x109
1x101
1x108
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socket g34 pinout
Abstract: smd marking WMM
Text: b3E » 4S51Ô72 DDQCmb Honeywell TDS H I H 0 N 3 8K X 8 RADIATION-HARDENED ROM HC6664 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 nm Process • Listed on SMD #5962-93171. Available as MIL-l-38535 QML Class Q and V • Total Dose Hardness through 1x10s rad Si02
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OCR Scan
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PDF
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HC6664
1x10s
1x1014N/cm2
1x109
MIL-l-38535
36-LE
28-LEAD
HC6364/1
socket g34 pinout
smd marking WMM
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smd TRANSISTOR code marking 8K
Abstract: pepi c TRANSISTOR SMD MARKING CODE QO SMD MARKING code 4N
Text: Honeywell HC6664 8K X 8 RADIATION-HARDENED ROM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 M_m Process • Listed on SMD #5962-93171. Available as MIL-l-38535 QML Class Q and V • Total Dose Hardness through 1x106 rad Si02 • Access Time of 25 ns (typical)
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OCR Scan
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PDF
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1x106
1x1014N/cm2
1x109
1x101
36-Pin
28-Pin
MIL-l-38535
36-LEAD
28-LEAD
HC6364/1
smd TRANSISTOR code marking 8K
pepi c
TRANSISTOR SMD MARKING CODE QO
SMD MARKING code 4N
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