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    Untitled

    Abstract: No abstract text available
    Text: Honeyw ell HC6664 Military Products Preliminary 8K x 8 RADIATION-HARDENED ROM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 jim Process • Typical 30 ns Access Time • Total Dose Hardness through 1x10 rad Si02 • Low Operating Power


    OCR Scan     		PDF 1x10u 1x109 1x101 1x108

    socket g34 pinout

    Abstract: smd marking WMM
    Text: b3E » 4S51Ô72 DDQCmb Honeywell TDS H I H 0 N 3 8K X 8 RADIATION-HARDENED ROM HC6664 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 nm Process • Listed on SMD #5962-93171. Available as MIL-l-38535 QML Class Q and V • Total Dose Hardness through 1x10s rad Si02


    OCR Scan     		PDF HC6664 1x10s 1x1014N/cm2 1x109 MIL-l-38535 36-LE 28-LEAD HC6364/1 socket g34 pinout smd marking WMM

    smd TRANSISTOR code marking 8K

    Abstract: pepi c TRANSISTOR SMD MARKING CODE QO SMD MARKING code 4N
    Text: Honeywell HC6664 8K X 8 RADIATION-HARDENED ROM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 M_m Process • Listed on SMD #5962-93171. Available as MIL-l-38535 QML Class Q and V • Total Dose Hardness through 1x106 rad Si02 • Access Time of 25 ns (typical)


    OCR Scan     		PDF 1x106 1x1014N/cm2 1x109 1x101 36-Pin 28-Pin MIL-l-38535 36-LEAD 28-LEAD HC6364/1 smd TRANSISTOR code marking 8K pepi c TRANSISTOR SMD MARKING CODE QO SMD MARKING code 4N