HC685 Search Results

Contextual Info: • ft fit * y w n Military Products 32K x 8 RADIATION-HARDENED STATIC RAM HC685 : FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 pm Process • Total Dose Hardness through 1x106 rad S i0 2 • Listed on SM D #5962-921 3 Available as

Contextual Info: Honeywell 32K X 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION • Fabricated with RICMOS'“ IV Bulk 0.8 urn Process • Total Dose Hardness through 1x10e rad Si02 • Neutron Hardness through 1x1014 cnrr2 OTHER • Read/Write Cycle Times s 40 ns (-55 to 125°C)

Contextual Info: Military & Space Products 32K x 8 STATIC RAM HC6856 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 µm Process Leff = 0.65 µm • Listed on SMD #5962-92153. Available as MIL-PRF-38535 QML Class Q and Class V • Total Dose Hardness through 1x106 rad(SiO2)

HC6856

Contextual Info: Military & Space Products 32K x 8 STATIC RAM HC6856 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 µm Process Leff = 0.65 µm • Listed on SMD #5962-92153. Available as MIL-PRF-38535 QML Class Q and Class V • Total Dose Hardness through 1x106 rad(SiO2)

KD 2.d smd transistor

Contextual Info: Honeywell Military Products 32K x 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 |um Process • Total Dose Hardness through 1x106 rad S i02 • Listed on SMD #5962-92153. Available as MIL-l-38535 QML Class Q and Class V

Contextual Info: Honeywell HC6856 Military Products Preliminary 256K-BIT RADIATION-HARDENED STATIC RAM FEATURES OTHER RADIATION • Fabricated with RICMOS Bulk 0.8 im Process • Total Dose Hardness through 1x106 rad(Si02 • Optional Architecture - 32K x 8 - 256Kx 1

Contextual Info: HONE YWEL L / S S E C 3ÖE D 4ssia?a ooddsms a H0 N3 '•■V Military Products 32K X Preliminary 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION OTHER • Fabricated with RICMOS Bulk 0.8 nm Process • Total Dose Hardness through 1x106 rad Si02

Contextual Info: b3E » • *4551072 DÜGOTbl 7^b ■H0N3 Honeywell 32K X 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION OTHER ■ Fabricated with RICMOS IV Bulk 0.8 jim Process • Read/Write Cycle Times s 40 ns -55 to 125°C • Total Dose Hardness through 1x10s rad(Si02)

Contextual Info: Honeywell Military & Space Products HC6856 32K x 8 STATIC RAM FEATURES RADIATION OTHER • Fabricated with R IC M O S “ IV Bulk 0.8 urn Process Lelf = 0.65 urn • Listed on SMD #5962-92153. Available as MIL-PRF-38535 QML Class Q and Class V • Total Dose Hardness through 1x106 rad(S i02)

Contextual Info: W l ì I T n E T 3ÛE Military Products m D 4551072 H0NEYÜI ELL/ S QCI'aOiH? 7 -veil H0N3 I S E C Advance Information SOI 256K-BIT RADIATIONHARDENED STATIC RAM 256K SOI SRAM 'T - 4 É , - FEATURES OTHER RADIATION • Fabricated with RICMOS SOI 0.8 • Access Time of 20 nsec typical

Contextual Info: Honeywell Advance Information 256K x 16 RADIATION-TOLERANT SRAM HC81640 FEATURES R A D IA TIO N OTHER • Total D ose H ardness at Tactical Level • Detects and Corrects All Single and Double Bit Errors Automatically • Neutron H ardness through 1x1014 cm 2

ASTM E235

Abstract: wj 5 smd 5962h9215301 QML-38535 SRAM TTL GDIP1-T28 LOR2568 LOR2568C ut7156c70pbar UT7156C55PBAR
Contextual Info: REVISIO N S LTR D ESC R IPTIO N D ATE YR-MO-DA A P P R O V ED Update boilerplate. Add devices 13 and 14. Add case outlines P and 9. Add C A G E 52088 as source of supply for devices 13 and 14. Editorial changes

UAA2001

Abstract: MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402
Contextual Info: MOTOROLA Semiconductors THE EUROPEAN MASTER SELECTION 1982 The total num ber of standard Sem iconductor products available from M otorola ex­ ceeds 15 0 0 0 device types. To most of our custom ers this total presents an overw helm ing choice. The European Master Selection lists approxim ately 4 0 0 0 preferred devices that re­

Contextual Info: TC74HC4002AP/AF D U A L 4 - I N P U T NOR GATE T he TC74HC4002A is a high speed CMOS 4 -IN P U T NOR G A T E fa b ric ate d w ith sillicon g ate C2MOS technology. It achieves th e hig h speed o peratio n s im ila r to eq u iv alen t L S T T L w hile m ain ta in in g the CMOS low pow er

5962L0053605VYC

Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
Contextual Info: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A