HE-NE LASER POWER SUPPLY CIRCUITS Search Results
HE-NE LASER POWER SUPPLY CIRCUITS Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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D1U54T-M-2500-12-HB4C | Murata Manufacturing Co Ltd | 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR |
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D1U74T-W-1600-12-HB4AC | Murata Manufacturing Co Ltd | AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs |
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MGN1S1212MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-12V GAN |
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MGN1S0512MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-12V GAN |
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MGN1S0508MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-8V GAN |
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HE-NE LASER POWER SUPPLY CIRCUITS Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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argon shield gas
Abstract: hamamatsu galvatron UV Lamp krypton schematic diagram xenon power supply 2 Wavelength Laser Diode germanium photodiode PIN xenon Schematic Power Supply 357 opto L2783 scandium
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L2783 SE-171-41 TLSO1028E02 argon shield gas hamamatsu galvatron UV Lamp krypton schematic diagram xenon power supply 2 Wavelength Laser Diode germanium photodiode PIN xenon Schematic Power Supply 357 opto scandium | |
Contextual Info: OPTO-GALVANIC SENSOR LASER GALVATRON SEE-THROUGH HOLLOW CATHODE LAMP L2783 SERIES Laser Sensor Using The Opto-Galvanic Effect Highly Stable Output, See-Through Cathode Optimality for Laser Wavelength Calibration and Laser Frequency Stabilization The Hamamatsu laser galvatron is an opto-galvanic sensor |
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L2783 SE-171-41 TLSO1028E01 | |
NE5212AD
Abstract: impedance matching transformer 100-75-120 NE5230 NE5212AN BPF31 BPF31 PIN NE5212AFE 897.10 PREAMPLIFIER TRANSIMPEDANCE optic fet aeg diode Si 21
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NE/SA/SE5212A 140MHz) NE/SA/SE5212A 140MHz OT96-1 076E03S MS-012AA 7110fl5b NE5212AD impedance matching transformer 100-75-120 NE5230 NE5212AN BPF31 BPF31 PIN NE5212AFE 897.10 PREAMPLIFIER TRANSIMPEDANCE optic fet aeg diode Si 21 | |
NE5212AD
Abstract: NE5212AN 1625am NE5212AFE
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140MHz) NE/SA/SE5212A E/SA/SE5212A SD00336 140MHz NE5212AD NE5212AN 1625am NE5212AFE | |
Diode SV-02
Abstract: 424 8P 850 nm LED for fiber-optic sensor 850 nm photodiode for fiber-optic sensor 850nm photodiode Fiber-optic fiber-optic photodiode for 850nm photodiode for fiber-optic sensor 850 nm TRANSIMpedance Amplifier NE5211D SA5211
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NE/SA5211 180MHz) 7110fl2tj NE/SA5211 28ki2 180MHz sot108-1 076e06s Diode SV-02 424 8P 850 nm LED for fiber-optic sensor 850 nm photodiode for fiber-optic sensor 850nm photodiode Fiber-optic fiber-optic photodiode for 850nm photodiode for fiber-optic sensor 850 nm TRANSIMpedance Amplifier NE5211D SA5211 | |
dvd writer circuit diagram
Abstract: dvd writer circuit DVD read writer circuit diagram TZA1030 bca 1st TZA1031HL philips 22 ah 306 Bipolar DC Power supply BP 4620 BCA 500 HDR65
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TZA1031 SCA74 753503/01/pp52 dvd writer circuit diagram dvd writer circuit DVD read writer circuit diagram TZA1030 bca 1st TZA1031HL philips 22 ah 306 Bipolar DC Power supply BP 4620 BCA 500 HDR65 | |
Contextual Info: ICL7121 HARRIS S E M I C O N D U C T O R 16-Bit Multiplying Microprocessor-Compatible D/A Converter O cto b e r 1997 Description Features 1 6 -B it R eso lu tion T he ICL7121 achieves 0.0 03% linea rity w ith o u t laser trim m in g by com b in ing a four q u a d ra n t m ultiplying DAC |
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ICL7121 16-Bit ICL7121 1-800-4-HARRIS | |
40XA
Abstract: NE521
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NE/SA5211 180MHz) NE/SA5211 180MHz 28ki2 BPF31, B50nm NE5211 E5214 AB1432. 40XA NE521 | |
A992 transistor and its equivalent
Abstract: A992 transistor A992 E5212 NE5212AD transistor a992 NE5212AN SE5212AN
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140MHz) NE/SA/SE5212A NE/SA/SE5212A 140MHz 10E-9. 220Mbaud 10E-10. NE5212A A992 transistor and its equivalent A992 transistor A992 E5212 NE5212AD transistor a992 NE5212AN SE5212AN | |
NE5211D
Abstract: SA5211D Fiber-optic temperature sensor 850nm photodiode signetics rf Receiver Circuits radio av receiver schematic diagram 850nm photodiode Fiber-optic fiber-optic photodiode for 820nm fiber-optic photodiode for 850nm fiber-optic sensor 820nm NES211
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NE/SA5211 180MHz) NE/SA5211 28ki2 180MHz 28kS7 50Mb/s BPF31, 850nm NE5211 NE5211D SA5211D Fiber-optic temperature sensor 850nm photodiode signetics rf Receiver Circuits radio av receiver schematic diagram 850nm photodiode Fiber-optic fiber-optic photodiode for 820nm fiber-optic photodiode for 850nm fiber-optic sensor 820nm NES211 | |
gj series hall effect
Abstract: fiber-optic sensor 820nm gj hall effect NES211 820nM 850nm photodiode Fiber-optic EE-25 transformer fiber-optic photodiode for 820nm fiber-optic photodiode for 850nm NE5211D
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NE/SA5211 28kii NE/SA5211 180MHz) 180MHz 10jiF 50Mb/s BPF31, 850nm gj series hall effect fiber-optic sensor 820nm gj hall effect NES211 820nM 850nm photodiode Fiber-optic EE-25 transformer fiber-optic photodiode for 820nm fiber-optic photodiode for 850nm NE5211D | |
ej 93Contextual Info: INTEGRATED CIRCUITS TZA3041AHL; TZA3041BHL; TZA3041U Gigabit Ethernet/Fibre Channel laser drivers Objective specification File under Integrated Circuits, IC19 Philips Semiconductors 1998 Aug 24 PHILIPS Philips Semiconductors Objective specification Gigabit Ethernet/Fibre Channel |
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TZA3041AHL; TZA3041BHL; TZA3041U TZA3041U TZA3041 TZA3041ctors 425102/200/01/pp20 ej 93 | |
1612a
Abstract: AHL-5 LQFP32 TZA3001 TZA3001AHL TZA3001BHL TZA3001U
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STM4/OC12 TZA3001 TZA3001BHL; TZA3001U LQFP32 1612a AHL-5 TZA3001AHL TZA3001BHL TZA3001U | |
6520 piaContextual Info: ICL7134 HARRIS S E M I C O N D U C T O R 14-Bit Multiplying Microprocessor-Compatible D/A Converter D e cem b er 1997 Features Description • 1 4 -B it L in ea rity 0 .0 0 3 % FSR T he IC L7134 co m b in e s a fo u r-q u a d ra n t m ultiplying DAC using thin film resisto r and C M O S circ u itry w ith an on-chip |
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ICL7134 14-Bit L7134 14-bit 1-800-4-HARRIS 6520 pia | |
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5.1 sony
Abstract: 74ALS CXD2308 HA5013 HI3050 HI3050JCQ RS-170 RS-343A
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HI3050 10-Bit, RS-343A/RS-170 CXD2308 10-Bit 50MHz 500mW HI3050 10-bit 5.1 sony 74ALS CXD2308 HA5013 HI3050JCQ RS-170 RS-343A | |
Contextual Info: ANALOG DEVICES □ FEATURES 150MSPS Encode Rate Low Input Capacitance: 17pF Low Power: 750mW -5 .2 V Single Supply MIL-STD-883 Compliant Versions Available High Speed 8-Bit Monolithic A/D Converter AD9002 F U N C T IO N A L B L O C K D IA G R A M APPLICATIONS |
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AD9002 150MSPS 750mW MIL-STD-883 AD9002 D9002 10MHz | |
AD9002
Abstract: Ground Radar diagram AD9002BN esm 2683
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AD9002 150MSPS 750mW MIL-STD-883 AD9002 Ground Radar diagram AD9002BN esm 2683 | |
Contextual Info: 00 Acapella Optical Modem IC ACS102A Main Features: * Full duplex serial transm ission over one fiber. Link lengths up to 25km. Supports asynchronous data rates from DC to 162kbps. Full diagnostic modes - Remote and Local loopback. Ultra low power consumption, typically 2-3mA, which could be |
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ACS102A 162kbps. RS-232 ISO9001 IG09001 S102A | |
YM3414
Abstract: ADI856 cxd1136 AD1856 AD1856N AD1856N-J AD1856N-K AD712 SM5807 yamaha audio power amp circuits
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16-Bit ADI856 16-Pin AD1856 YM3414 cxd1136 AD1856N AD1856N-J AD1856N-K AD712 SM5807 yamaha audio power amp circuits | |
Contextual Info: 16-Bit PCM Audio DAC ADI856 ANALOG DEVICES □ BLOCK DIAGRAM FEATURES 0.0025% THD Fast Settling Perm its 2 x , 4 x or 8 x Oversampling ±3V Output Optional Trim Allow s Superlinear Performance ±5V to ±12V Operation 16-Pin Plastic DIP or SO IC Package Serial Input |
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16-Bit ADI856 16-Pin 16-bit AD1856 9344MHz AD1856N, AD1856N-J, | |
AD689J
Abstract: AD689
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12-Bit 10ppm/Â AD689 AD689 192mA 684ii AD689J | |
Contextual Info: HA-5160 Semiconductor September 1998 100MHz, JFET Input, High Slew Rate, Uncompensated, Operational Amplifier T he H A -5160 is a w ideb an d, un com p ensa ted, opera tiona l am p lifie r w ith F E T /B ip o la r te ch nolog ies and D iele ctric Isolation. T h is m on olithic am p lifie r fea tu res su p e rio r high |
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HA-5160 100MHz, 20V/ns | |
L74A
Abstract: AD9012 ladder logic for analog in put AD9611
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AD9012 100MSPS MIL-STD-883 AD9012 74as04 L74A ladder logic for analog in put AD9611 | |
Contextual Info: h a r r is S E M I C O N D U C T O R HA-5160, HA-5162 " 1 0 0 M H z , J F E T In p u t , H ig h S l e w R a t e , November 1996 U n c o m p e n s a te d , O p e r a tio n a l A m p lifie r s Features Description • W ide Gain Bandwidth Ay > 1 0 . 100MHz |
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HA-5160, HA-5162 100MHz 20V/ns 280ns |