NE5211 Search Results

of IC 9290

Abstract: NE52118 NE52118-T1 S21E transistor c 5287 ca 3140 ic
Contextual Info: L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FEATURES • NE52118 PACKAGE DIMENSIONS Units in mm HIGH POWER GAIN: GA = 15 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω LOW NOISE: NF = 1.0 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω

7415 ic pin details

Abstract: C10535E NE52118 NE52118-T1
Contextual Info: PRELIMINARY DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52118 L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FEATURES • For Low Noise & High Gain amplifiers NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω

BPF31

Abstract: hp8152a BPF31 PIN BPF-31 SD00353 AB1432 AB1121 NE5214 ME522A SD00500
Contextual Info: INTEGRATED CIRCUITS AB1432 50Mb/s fiber optic receivers Author: G. Lane Philips Semiconductors 1988 Dec Philips Semiconductors Application brief 50Mb/s fiber optic receivers AB1432 Author: G. Lane external resistor, RHYS, is used to set the amount of hysteresis

op2134

Abstract: op2132 radio av receiver schematic diagram OP2137 AB1432 28Kp Fiber-optic temperature sensor 850nm photodiode cascode transimpedance NE5211D SA5211
Contextual Info: N E /S A 5 2 1 1 Transimpedance Amplifier 180MHz Preliminary Specification DESCR IPTIO N The NE/SA5211 is a 28k£2 transimpe­ dance, wide-band, low noise amplifier with differential outputs, particularly suit­ able for signal recovery in fiber optic receivers. The part is ideally suited for

HP8568

Abstract: NE5212 PREAMPLIFIER TRANSIMPEDANCE optic fet HFBR-2202 1950XR photodyne 1950 philips LED AlGaAs NE5230 PHILIPS WIDEBAND HYBRID IC MODULES NE5210
Contextual Info: INTEGRATED CIRCUITS AN1435 A family of wideband low noise transimpedance amplifiers 1991 Dec Philips Semiconductors Philips Semiconductors Application note A family of wideband low noise transimpedance amplifiers AN1435 INTRODUCTION Transimpedance Amplifier Family

Diode SV-02

Abstract: 424 8P 850 nm LED for fiber-optic sensor 850 nm photodiode for fiber-optic sensor 850nm photodiode Fiber-optic fiber-optic photodiode for 850nm photodiode for fiber-optic sensor 850 nm TRANSIMpedance Amplifier NE5211D SA5211
Contextual Info: INTEGRATED CIRCUITS NE/SA5211 Transimpedance amplifier 180MHz Product specification 1995 Apr 26 IC19 Philips Semiconductors PHILIPS 7110fl2tj ODfl^T^a DDT • ! Philips Semiconductors Product specification Transimpedance amplifier (180MHz) NE/SA5211 DESCRIPTION

NE5211D

Abstract: Fiber-optic temperature sensor 850nm photodiode 850nm photodiode Fiber-optic fiber-optic photodiode for 850nm SA5211 SA5211D CURRENT TRANSFORMER transimpedance SA52-11 RF Transistor s-parameter 50Mhz
Contextual Info: Philips Semiconductors Product specification Transimpedance amplifier 180MHz NE/SA5211 DESCRIPTION PIN CONFIGURATION The NE/SA5211 is a 28kΩ transimpedance, wide-band, low noise amplifier with differential outputs, particularly suitable for signal recovery in fiber optic receivers. The part is ideally suited for many

850nm photodiode Fiber-optic

Abstract: fiber-optic photodiode for 850nm AN1443 NE5210 NE5212 NE5217 PIN Photodiode side look transresistance amp SD00442 F3DB
Contextual Info: INTEGRATED CIRCUITS AN1443 Low cost, TTL fiber optic receivers for up to 100Mb/s NRZ Author: Michael J. Sedayao Philips Semiconductors 1990 Jan Philips Semiconductors Application note Low cost, TTL fiber optic receivers for up to 100Mb/s NRZ Author: Michael J. Sedayao

gj series hall effect

Abstract: fiber-optic sensor 820nm gj hall effect NES211 820nM 850nm photodiode Fiber-optic EE-25 transformer fiber-optic photodiode for 820nm fiber-optic photodiode for 850nm NE5211D
Contextual Info: N E /S A 5 2 1 1 S ig n e t ic s Transimpedance Amplifier 180MHz Prelim inary Specification Linear Products DESCRIPTION The NE/SA5211 is a 2 8 k ii transimpe­ dance, wide-band, low noise amplifier with differential outputs, particularly suit­ able for signal recovery in fiber optic

Contextual Info: SA5211 Transimpedance amplifier 180 MHz Rev. 03 — 07 October 1998 Product specification 1. Description The SA5211 is a 28 kΩ transimpedance, wide-band, low noise amplifier with differential outputs, particularly suitable for signal recovery in fiber optic receivers.

LT 5224 diode

Contextual Info: P h ilip s S e m ic o n d u c to r s D a ta C o m m u n ic a tio n s P ro d u c ts A p p lic a tio n s N o te Fiber optic receiver applications note I. A NEW FIBER OPTIC RECEIVER CHIP SET FOR 100Mb/s FDDI DATA LINKS AN4003 P a rtic u la r a tte n tio n h a s b e e n p a id to im p ro v in g th e p o w e r s u p p ly

NE5212 Signetics

Abstract: NE5214 SA5214D/0
Contextual Info: NE/SA5214 Signefìcs Postamplifier with Link Status Indicator Preliminary Specification Linear Products DESCRIPTION FEATURES THE NE/SA5214 is a 75MHz postampli­ fier system designed to accept low level high-speed signals. These signals are converted into a TTL level at the output.

ne5212

Abstract: E5212 NE5212 E
Contextual Info: A pplication note Philips Sem iconductors Data Com m unications Products A family of wideband low noise transimpedance amplifiers AN1435 INTRODUCTION Transimpedance Amplifier Family Despite num erous advantages, the relatively high cost of fiber optic transm ission prevented its w ide-spread industrial acceptance. High

photodiode responsivity 1550nm, 1

Contextual Info: A pplication note Philips Sem iconductors Industrial Products Low cost, TTL fiber optic receivers for up to 100Mb/s NRZ A Typical Fiber O ptic Data Link Author: Michael J. Sedayao INTRODUCTION This application note describes circuits belonging to the receiver

F432

Contextual Info: Datacom, Telecom, General Purpose PIN Photodiodes MF432 SC MF432 ST MF432 Pigtail \ ST Assembly SC Assembly Pigtail Assembly FDDI FDDI ATM-SDH/SONET 155, ESCON ESCON 622 and 2488Mbps ATM-SDH/SONET 155, ATM-SDH/SONET 155, FITL - Fiber In The Loop 622 and 2488Mbps

125FJ

Contextual Info: Is . I .; : I.• s .;

1550nm photodiode 3,8 Ghz

Abstract: photodiode 1550nm 4 Ghz MF431 MF432 NE5212A 1550nm PIN photodiode
Contextual Info: MF432 Datacom, Telecom, General Purpose PIN Photodiodes MF432 ST MF432 SC MF432 Pigtail ST Assembly SC Assembly Pigtail Assembly ST Applications SC Applications • FDDI • ESCON • ATM-SDH/SONET 155, 622 and 2488Mbps • FITL - Fiber In The Loop • FTTH/FTTC - Fiber To

BPF31

Abstract: 850nm pair of optical Fiber-optic 850nm photodiode Fiber-optic AN1443 NE5210 NE5212 NE5217 transresistance amp photodiode 850nm dbm BPF31 PIN
Contextual Info: Philips Semiconductors Industrial Products Application note Low cost, TTL fiber optic receivers for up to 100Mb/s NRZ Author: Michael J. Sedayao AN1443 A Typical Fiber Optic Data Link The domain of the HiFI-100 chip set covers the E/O, O/E and the clock recovery sections as shown in the blocks above. Figure 2

ne5212

Abstract: PREAMPLIFIER TRANSIMPEDANCE optic fet photodyne 1950 photodyne photodiode has capacitance of 5pf. bandwidth 1950-XR HP8568 820nM photodiode preamplifier AGC AN1435
Contextual Info: INTEGRATED CIRCUITS AN1435 A family of wideband low noise transimpedance amplifiers author Philips Semiconductors 1991 Dec Philips Semiconductors Application note A family of wideband low noise transimpedance amplifiers AN1435 INTRODUCTION Transimpedance Amplifier Family

7415 ic pin details

Abstract: d 5287 transistor C10535E NE52118 NE52118-T1 nec 2562 k 232
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

jam digital

Abstract: NE5212 NE5210 NE5214D SA5214
Contextual Info: N E /S A 5 2 1 4 Postamplifier with Link Status Indicator Preliminary Specification PIN CONFIGURATION DESCRIPTION FEATURES THE N E /S A 5214 is a 75MHz postam pli­ fier system designed to accept low level high-speed signals. These signals are converted into a TTL level at the output.

NE5180A

Abstract: NE5224 AM26LS32M "Line Receiver" CMOS N48 Differential Line Receiver duart AM26LS31C AM26LS31M FB2012A
Contextual Info: Philips Semiconductors Replacement list ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ

NE5211D

Abstract: SA5211D Fiber-optic temperature sensor 850nm photodiode signetics rf Receiver Circuits radio av receiver schematic diagram 850nm photodiode Fiber-optic fiber-optic photodiode for 820nm fiber-optic photodiode for 850nm fiber-optic sensor 820nm NES211
Contextual Info: NE/SA5211 Signetics Transimpedance Amplifier 180MHz Preliminary Specification Linear Products PIN CONFIGURATIO N DESCRIPTION FEATURES The NE/SA5211 is a 28ki2 transimpe­ dance, wide-band, low noise amplifier with differential outputs, particularly suit­

CAPACITOR 220 HUD

Abstract: Philips RF PREAMP NE521 NE5217 NE5210 NE5212A Philips 135 Capacitor capacitor c 368 Philips
Contextual Info: INTEGRATED CIRCUITS NE/SA 5217 Postamplifier with link status indicator Product specification 1995 Apr 26 IC19 Philips Semiconductors PHILIPS PHILIPS V # 711DA2L. 61T Philips Semiconductors Product specification Postamplifier with link status indicator DESCRIPTION