HE65 Search Results

HSD468

Contextual Info: HI-SINCERITY Spec. No. : HE6535 Issued Date : 1992.11.25 Revised Date : 2006.07.27 Page No. : 1/5 MICROELECTRONICS CORP. HSD468 NPN Epitaxial Planar Transistor Description The HSD468 is designed for general purpose low frequency power amplifier applications.

HSC1815

Abstract: diode marking H2
Contextual Info: HI-SINCERITY Spec. No. : HE6523 Issued Date : 1992.11.25 Revised Date : 2006.07.28 Page No. : 1/4 MICROELECTRONICS CORP. HSC1815 NPN Epitaxial Planar Transistor Description The HSC1815 is designed for use in driver stage of AF amplifier general purpose amplification.

HMBD914

Abstract: t1s mark sot23 HE65
Contextual Info: HI-SINCERITY Spec. No. : HE6538 Issued Date : 1997.01.18 Revised Date : 2004.09.01 Page No. : 1/4 MICROELECTRONICS CORP. HMBD914 HIGH-SPEED SWITCHING DIODE Description SOT-23 The HMBD914 is designed for high-speed switching application in hybrid thick-and

SD965

Abstract: equivalent transistor HSD965 HSD965 HSD965 PIN he6537 transistor HSD965 HE6537 data sheet PT10M
Contextual Info: HI-SINCERITY Spec. No. : HE6537 Issued Date : 1992.11.25 Revised Date : 2004.11.30 Page No. : 1/4 MICROELECTRONICS CORP. HSD965 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD965 is suited for use as AF output amplifier and flash unit. TO-92 Absolute Maximum Ratings

HSD471A

Contextual Info: HI-SINCERITY Spec. No. : HE6518 Issued Date : 1993.02.24 Revised Date : 2004.07.21 Page No. : 1/5 MICROELECTRONICS CORP. HSD471A NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD471A is designed for use in drive and output stage of frequency amplifier applications.

Contextual Info: HI-SINCERITY Spec. No. : HE6523 Issued Date : 1992.11.25 Revised Date : 2004.12.28 Page No. : 1/4 MICROELECTRONICS CORP. HSC1815 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC1815 is designed for use in driver stage of AF amplifier general purpose amplification.

Contextual Info: HI-SINCERITY Spec. No. : HE6527 Issued Date : 1993.01.15 Revised Date : 2005.02.14 Page No. : 1/4 MICROELECTRONICS CORP. HSC2228Y NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC2228Y is designed for high voltage amplifier applications. TO-92 Absolute Maximum Ratings

Contextual Info: HI-SINCERITY Spec. No. : HE6501 Issued Date : 1992.08.25 Revised Date : 2005.02.14 Page No. : 1/5 MICROELECTRONICS CORP. HSA1538S PNP EPITAXIAL PLANAR TRANSISTOR Description The HSA1538S is designed for use in high-definition CRT display video output, wide-band amplifier applications.

H7805

Abstract: H7805AA H7805BA vo 341k
Contextual Info: HI-SINCERITY Spec. No. : HE6549 Issued Date : 1992.11.25 Revised Date : 2001.11.29 Page No. : 1/3 MICROELECTRONICS CORP. H7805AA H7805BA 3-TERMINAL POSITIVE VOLTAGE REGULATOR Description TO-92 These regulators employ internal current-limiting and thermalshutdown, making them essentially indestructible. They can deliver

HSC1815

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6523 Issued Date : 1992.11.25 Revised Date : 2001.06.06 Page No. : 1/3 HSC1815 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC1815 is designed for use in driver stage of AF amplifier general purpose amplification.

HSB1426

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6506 Issued Date : 1994.03.25 Revised Date : 2002.02.08 Page No. : 1/3 HSB1426 PNP EPITAXIAL PLANAR TRANSISTOR Description DC-DC Converter Features TO-92 • Low Collector to Emitter Saturation Voltage Absolute Maximum Ratings

HSD468

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6535 Issued Date : 1992.11.25 Revised Date : 2002.02.08 Page No. : 1/4 HSD468 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD468 is designed for general purpose low frequency power amplifier applications.

HSD965

Abstract: equivalent transistor HSD965 HSD965Q HSD965 PIN equivalent transistor HE6537 HE6537 HE6537 data sheet hsd965 equivalent transistor HSD965
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6537 Issued Date : 1992.11.25 Revised Date : 2002.02.22 Page No. : 1/3 HSD965 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD965 is suited for use as AF output amplifier and flash unit. Absolute Maximum Ratings

HSC2228Y

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6527-B Issued Date : 1993.01.15 Revised Date : 2000.10.01 Page No. : 1/3 HSC2228Y NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC2228Y is designed for high voltage amplifier applications. Absolute Maximum Ratings

HSD882S

Abstract: HSD882
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6544 Issued Date : 1992.11.25 Revised Date : 2002.01.25 Page No. : 1/4 HSD882S NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD882S is suited for the output stage of 0.75W audio, voltage regulator, and relay driver.

HTL194

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6549-B Issued Date : 1993.04.12 Revised Date : 2000.10.01 Page No. : 1/3 HTL194 PNP EPITAXIAL PLANAR TRANSISTOR Description The HTL194 is designed for high voltage low power switching applications especially for use in telephone and telecommunication

HSB772S

Abstract: HE6549
Contextual Info: HI-SINCERITY Spec. No. : HE6549 Issued Date : 1992.11.25 Revised Date : 2004.08.13 Page No. : 1/5 MICROELECTRONICS CORP. HSB772S PNP EPITAXIAL PLANAR TRANSISTOR Description The HSB772S is designed for using in output stage of 0.75W amplifier, voltage regulator, DC-DC converter and driver.

HSB647A

Abstract: HSD667A
Contextual Info: HI-SINCERITY Spec. No. : HE6510 Issued Date : 1996.07.15 Revised Date : 2004.08.16 Page No. : 1/5 MICROELECTRONICS CORP. HSD667A SILICON NPN EPITAXIAL Description Low Frequency Power Amplifier Complementary Pair With HSB647A. TO-92 Absolute Maximum Ratings

HSA733

Abstract: frequancy
Contextual Info: HI-SINCERITY Spec. No. : HE6507 Issued Date : 1992.12.16 Revised Date : 2006.07.28 Page No. : 1/5 MICROELECTRONICS CORP. HSA733 PNP Epitaxial Planar Transistor Description The HSA733 is designed for use in driver stage of AF amplifier applications. TO-92 Absolute Maximum Ratings

Contextual Info: HI-SINCERITY Spec. No. : HE6502 Issued Date : 1992.08.25 Revised Date : 2005.02.15 Page No. : 1/4 MICROELECTRONICS CORP. HSC3953S NPN EPITAXIAL PLANAR TRANSISTOR Description High-definition CRT display video output, wide-band amplifier applications. TO-92

HTL194

Contextual Info: HI-SINCERITY Spec. No. : HE6549 Issued Date : 1993.04.12 Revised Date : 2005.02.15 Page No. : 1/4 MICROELECTRONICS CORP. HTL194 PNP EPITAXIAL PLANAR TRANSISTOR Description The HTL194 is designed for high voltage low power switching applications especially for use in telephone and telecommunication circuits.

HSB1426

Contextual Info: HI-SINCERITY Spec. No. : HE6506 Issued Date : 1994.03.25 Revised Date : 2004.11.30 Page No. : 1/4 MICROELECTRONICS CORP. HSB1426 PNP EPITAXIAL PLANAR TRANSISTOR Description DC-DC Converter TO-92 Features • Low Collector to Emitter Saturation Voltage Absolute Maximum Ratings

85170

Abstract: HSD468
Contextual Info: HI-SINCERITY Spec. No. : HE6535 Issued Date : 1992.11.25 Revised Date : 2004.07.21 Page No. : 1/5 MICROELECTRONICS CORP. HSD468 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD468 is designed for general purpose low frequency power amplifier applications.

HSB562

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6513-B Issued Date : 1993.01.15 Revised Date : 2000.10.01 Page No. : 1/4 HSB562 PNP EPITAXIAL PLANAR TRANSISTOR Description The HSB562 is designed for general purpose low frequency power amplifier applications.