HE7601SG Search Results

Hitachi DSA0087

Abstract: HE7601SG
Contextual Info: HE7601SG GaAlAs Infrared Emitting Diode ADE-208-996 Z 1st Edition Dec. 2000 Description The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors.

Contextual Info: HE7601SG ODE-208-023A Z Rev.1 Feb. 01, 2008 GaAlAs Infrared Emitting Diode Description The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors.

Contextual Info: HE7601SG GaAIAs IRED Description T he H E 7 6 0 1 SG is a 770 nm band G aA lA s infrared light em itting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors. features Package Type • HE7601SG : SG

SG1 diode

Contextual Info: HE7601SG GaAlAs Infrared Emitting Diode HITACHI Description The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors. Features • High efficiency and high output power

Contextual Info: Infrared Emitting Diode Description The H E7601SG is a 770 nm band GaAIAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors.

Contextual Info: HE7601SG-Infrared Emitting Diodes IRED Description H E 7601S G is a 0.77 G aA lA s infrared e m it­ ting d io d e with double heterojunction structure. H igh brightness o u tp u t, high pow er o u tp u t and high speed resp onse can be obtained. It is suitable as a light source in optical control­

Contextual Info: HE7601SG ODE2059-00 M Rev.0 Aug. 01, 2008 GaAlAs Infrared Emitting Diode Description The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors.

HE7601SG

Contextual Info: HE7601SG ODE-208-023 Z Rev.0 Oct. 27, 2006 GaAlAs Infrared Emitting Diode Description The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors.

Contextual Info: HE7601SG Description GaAIAs IRED The HE7601SG is a 770 nm band GaAlAs infrared light emitting diode with a double heterojunction struc­ ture. It is suitable as a light source for optical control devices and sensors. features Package Type • HE7601SG: SG

HE7601SG

Contextual Info: HE7601SG ODE-208-023 Z Rev.0 Oct. 27, 2006 GaAlAs Infrared Emitting Diode Description The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors.

Hitachi DSA002727

Contextual Info: HE7601SG GaAlAs Infrared Emitting Diode Description The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors. Features • High efficiency and high output power

HE7601SG

Contextual Info: HE7601SG GaAlAs Infrared Emitting Diode ODE-208-996B Z Rev.2 Mar. 2005 Description The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors.

SG1 diode

Abstract: diode hitachi HE7601SG
Contextual Info: HE7601SG GaAlAs Infrared Emitting Diode HITACHI Description The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors. Features • High efficiency and high output power

Contextual Info: HE7601SG GaAlAs Infrared Emitting Diode Description The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors. Features • High efficiency and high output power

HE8807SG

Abstract: HL7832G HL7832HG HL8312E he8813vg Hitachi Scans-001 LRTBGVTG-U9V5-1 A7A9-5 TT7-6
Contextual Info: H IT A C H I/C O P T O E L E C T R O N IC S S l4 E D • G 012D 32 HL7832G/HG bMT « H GaAIAsLD *7 Description The HL7832G/HG are 0.78 pm band GaAlAs laser diodes with a double heterojunction structure, and are appropriate as the light sources for various optical application devices, including optical video disk play­

HE1301

Abstract: HE8807SG HE8813VG HE8815VG HL8312E HL8319E HL8319G Hitachi Scans-001
Contextual Info: HITACHI/ OPTOELECTRONICS SHE D • HHTbEGS 0Q1EGÔ3 GGD M H I T 4 GaAiAsLD H L 8 3 1 9 E /G Description The HL8319E/G are high-power 0.8 pm band GaAlAs laser diodes with a double heterojunction structure. Their internal circuit configuration is suited for operation on a single negative supply voltage. They are

7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Contextual Info: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver

opnext

Abstract: HL1359CP laser diode bare chip 1550 DFB laser bare die HL1357CP HL1511AF HL1513AF laser diode for optical communication Laser Diode 1550 nm dBm dfb 10g
Contextual Info: Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, with a focus on quality optical technologies, Opnext offers unique leading edge optodevices in such areas as fiber-optic communications, optical storage, and measuring

HL7806

Abstract: 6808X L7851 hl7852 HL6411G HL8325G hitachi HL7852 hl7806g HL7851
Contextual Info: Product Lineup W avelength Visible and infrared laser diodes 633 nm O ptical output 3 mW Internal circuit Part num ber Main application LD ^P * HL6314M G HL6316G HL6411G* Pointer HL6315G f Pointer HL6312G Bar code reader H L 6313G t Bar code reader HL6720G

HL7801

Abstract: HL7806
Contextual Info: §2. Chip Structures 2.1 Laser Diodes Structures 2.1.1 GaAlAs LD Structure The p-type active layer, in which stimulated emission enforces optical amplification figure 2-1 (a , is processed first. The p-n junction is made here for injecting minority carriers (the p-n heterojunction).

Contextual Info: Section 6 Reliability T h is section c o v e rs p o in ts w h ich p articularly affect cu rrent, etc. to drift, an d u ltim a tely lead to the en d th e o p e ra tin g life lig h t e m ittin g d e v ic e s , an d of p ro v id e s so m e e x a m p l e s w h ich sh o u ld be studied

HL7801

Abstract: HL7806 HE8807CL HL7801E HL1324MF HL83M HL7831 HL83H HE8812 hitachi he1301
Contextual Info: Family Introduction Family Introduction Laser Diodes LD feckages AC \ E HL671I G HG FG TR DM BF DL HL1321BF HL132IDL HL 1341 BF HLI341DL HL 1541 BF HL1541DL HL7801E HL7802 HL7802E HL7802G HL7806 HL7806G HL7831 HL7831G HL7832 HL7832G HL7836 HL7836G HL7838

HE8811

Contextual Info: Section 2 Chip Structures 2.1 Laser Diodes Structures 2.1.1 G aA lA s LD Structure T h e p - ty p e a c tiv e la y e r , in w h i c h s t i m u l a t e d emission enforces optical amplification figure 2 - 1 (a , is processed first. The p-n junction is made

HE8815VG

Abstract: HE8807SG HL8311E HL8311G HL8312E Hitachi Scans-001 P015M
Contextual Info: HITACHI/COPTOELECTRONICS 54E D • MM^bSOS 001E0b3 EIE H H I T M H L8 3 1 1 E /G G a A IA s L D Description The HL8311E/G are 0.8 Jim band GaAlAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment.