HEAF Search Results

HEAF

Contextual Info: COUPLER 90˚ HYBRID 200 WATT DATA SHEET SHEET 1 OF 3 Dwg HEAF PART SERIES: HEAF FEATURES EN 13-3117 Revision- APPLICATIONS Low Profile Surface Mount Package High Power Low Insertion Loss High Isolation High Reliability Power Amplifiers Modulator Demodulator

Contextual Info: MOSFET MODULE FCA50BC50 UL;E76102 M F C A 5 0 B C 5 0 is a dual power M OSFET module designed for fast switching applications of high voltage and current. (2 devices are serial connected.) The mounting base of the module is elecjtjcally isolated from semiconductor elements for simple heafeCk\onstruction.

2N2988

Abstract: 2N2967 2N2987 2N2994 2N2989 2N2993 2N2991 EL 2n25 2N25 2N2990
Contextual Info: TYPES 2N2987 THRU 2N2994 N-P-N TRIPLE-DIFFUSED PLANAR SILICON POWER TRANSISTORS TYPES 2N2987 THRU 2N2994 BULLETIN NO. Dl-S 6810506 , DECEMBER HIGH-FREQUENCY INTERMEDIATE-POWER TRANSISTORS • 15 Watts at 100°C Case Temperature • Typ VcE tat of 0.2 V at 200 mA

2N3418

Abstract: 2N3419 tata ak 90 2N3420 2N3421 TIX3033 TNR*G TIX3034 TIX3035 TIX3036
Contextual Info: TYPES 2N3418, 2N3419, 2N3420, 2N3421 N-P-N EPITAXIAL PLANAR SILICON MEDIUM-POWER TRANSISTORS HIGH-FREQUENCY MEOIUM-POWER TRANSISTORS Formerly TIX3033, TIX3034, TIX3035, TIX3036 • High-Power Dissipationin TO-5 Package: 15 watts at Tc = 100‘ C • Low-Leakage Current:

A423

Abstract: TP801C06 a423 power
Contextual Info: T P 8 0 1 C 0 6 I5A h f r — > < U T ¥ 4 =fr— K SCHOTTKY BARRIER DIODE : Features • ffeVF Low V f • X -f - ^ mmmmm C on nection D iagram > ^ 7, t r - Super high speed sw itc h in g . • 7 V - * - ttiS C J : H igh reliability by planer design. r*-T

1320C

Abstract: HMR3300 1S200 R3330 1301a 9C326 HMR3200 3aud
Contextual Info: H M R 3 2 0 0 /H M R 3 3 0 0 ^ r7i^ r~7 ~- SENSOR PRODUCTS DIGITAL COMPASS SOLUTIONS F e a tu re s * * * * » * * * 1 HaSdjng' Accuracy, Oil * Res oluti 0.5* Repeatability ±60" Tilt Range <Pitch and Roll> for HMR3300 S m all Si ze 1.0" x 1.45" x 0.4' , LIgfit Weight

um-sr

Contextual Info: RFco•AXIAL CONNECTORS U M s e r ie s Overview • The U M U ltra-M in iatu re series consists o f ultrasmall-size coaxial connectors th at are most suitable fo r very th in coaxial cables having a high reliability. T w o types o f lock are available: the screw-lock typ e and the quick-lock typ e. The

7586 nuvistor

Abstract: tube 7586 nuvistor 7586 thyratron rs tube
Contextual Info: 7586 M edium -M u Triode NUVISTOR TYPE For In d u s t r ia l A p p lic a tio n s GENERAL DATA E le c t r i c a l : Heater, fo r U n ip o te n tia l Cathode: V o ltag e AC o r D C . 6.3 ± 10% C urrent at 6.3 v o lt s . . .

Contextual Info: ;9-29 - TSPM ><?<4DEB8 ;<:; A@G8B B8=4H 9MJWXUMV [ [ [ [ [ [ [ [ [ [ [ zAD= ,Geq yhjklhn F 7 8 zAD= ,Geq kgghgkog zAD= ,Geq w/wgpggigjlgnh 6@?D46D 74D4 6@<= wGFL9;L 9JJ9F?=E=FL huc hvc hw wGFL9;L E9L=JA9D wGFL9;L J=KAKL9F;= hgu ilg4uwfjg4xw kkg4uw f hil4xw

rotary transformer

Abstract: 12 pin transformer sony PCM GPEC cx20137 CXA1202Q CXA1202Q-Z CXA1202R gpec H2310
Contextual Info: I Son y. CXA1202Q-Z/CXA1202R REC/PB Amplifier for VCR Package Outline Description C XA1202Q -Z and CXA1202R are bipolar ICs developed as REC/PB amplifiers for VCR's. C X A 1202Q -Z Features • Built-in head amplifier feedback dumping con­ tributes to the reduction of external com ­

MTVA0300N07

Abstract: MTVA0300
Contextual Info: EMC Technology RF & MICROWAVE CABLE ASSEMBLIES & COAXIAL COMPONENTS CATALOG ASR Lab-­Flex Lab-­Flex® S Lab-­Flex® AF Semi-­Rigid, Conformable & Flexible Semi-­Rigid Low Loss RG Series Test Cable Assemblies DQG&RD[LDO3DVVLYH&RPSRQHQWV

RJH 32

Contextual Info: 512 x 18/1024 x 18 Synchronous FIFO FEATURES • May be Cascaded for Increased Depth, or Paralleled for Increased Width • Fast Cycle Times: 20/25/35 ns • 16-mA-l<x Three-State Outputs • Pin-Compatible Drop-In Replacements for IDT72215B/25B FIFOs • Choice of IDT-Compatible or Enhanced Operating

Contextual Info: A K y C T H H E C K H Í t 5KyPHAJI T o m XXXV . <'U/‘% U U A # C iA I M a # y j\K 551.463.21 e/¿ > 1989 B b in . h M C { 4 J C ¡k l'W M .U i'& p jfc ? O MOflEJIHPOBAHHH B 3AHM0 AEÍ1CTBHH MOft ^ M ñ ^ / S o i ^ B ¿JByMEPHO-HEOJJHOPOJJHOM B 0 JIH0 B 0 3 E '

2953A

Abstract: 2952A sem 5025 2953I npjt npjt AC DRIVE 2952IM 2953aim
Contextual Info: S e m i c o n d u c t o r t ß L P 2952/L P 2 9 5 2 A /L P 2953/L P 2953 A A d ju stab le M ic ro p o w e r L o w -D ro p o u t Voltage R eg u la to rs General Description The LP2952 and LP2953 are micropower voltage regulators with very low quiescent current 130 pA typical at 1 mA load

lf157

Contextual Info: S G S -T H O M S O N l f i I I I L f I I I - { ¡I I I 1 ^ 0 ô [i[L [l( ê ïï^ ( ô ) M []( g S l f I 57 - LF 2 5 7 - L F 3 5 7 WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS • HIGH INPUT IMPEDANCE J-FET INPUT STAGE ■ HIGH SPEED J-FET OP-AMPs : UP to 20MHz,

trm a55

Contextual Info: EMC Technology RF & MICROWAVE CABLE ASSEMBLIES & COAXIAL COMPONENTS CATALOG ASR Lab-­Flex Lab-­Flex® S Lab-­Flex® AF Semi-­Rigid, Conformable & Flexible Semi-­Rigid Low Loss RG Series Test Cable Assemblies DQG&RD[LDO3DVVLYH&RPSRQHQWV

ZGJE

Abstract: GAD 929 eajj
Contextual Info: ;9-29 - TSPM ><?<4DEB8 ;<:; A@G8B B8=4H 9MJWXUMV [ [ [ [ [ [ [ [ [ [ [ zAD= ,Geq yhjklhn F 7 8 zAD= ,Geq kgghgkog zAD= ,Geq w/wgpggigjlgnh 6@?D46D 74D4 6@<= wGFL9;L 9JJ9F?=E=FL huc hvc hw wGFL9;L E9L=JA9D wGFL9;L J=KAKL9F;= hgu ilg4uwfjg4xw kkg4uw f hil4xw

lm2903

Abstract: LM393AH LM393A LM293A LM393 APPLICATIONS zero crossing LM2903T
Contextual Info: E ri LM193/A - LM293/A LM393/A - LM2903 SGS-THOMSON ¡y LOW POWER DUAL VOLTAGE COMPARATORS • WIDE SINGLE SUPPLY VOLTAGE RANGE OR DUAL SUPPLIES +2V TO +36V OR ±1V TO ±18V ■ VERY LOW SUPPLY CURRENT 0.4mA INDEPENDENT OF SUPPLY VOLTAGE (1 mW/comparator at +5V)

laser diode 1550 ns single mode

Abstract: GENERAL SEMICONDUCTOR SM 3b diode 1550 laser diode dfb laser diode 1550 Semiconductor Laser International 1550 communication laser diode dfb 1550 nm laser diode DFB Laser-Diode 1550 nm laser diode philips 075mW
Contextual Info: Philips Components c q f s i /d A -D E V E L O P M E N T DATA This data sheet contains advance information and specifications which are subject to change without notice. BURIED HETEROJUNCTION InGaAsP DFB LASER DIODE

Contextual Info: ;9-29 - TSPM ><?<4DEB8 ;<:; A@G8B B8=4H 9MJWXUMV [ [ [ [ [ [ [ [ [ [ [ [ zAD= ,Geq yhjklhn F 7 8 zAD= ,Geq kgghgkog zAD= ,Geq w/wgpggigjlgnh 6@?D46D 74D4 6@<= wGFL9;L 9JJ9F?=E=FL huc hvc hw wGFL9;L E9L=JA9D wGFL9;L J=KAKL9F;= hgu ilg4uwfjg4xw kkg4uw f hil4xw

Contextual Info: Bulletin 12079/A International S R e c tifie r s d io 53c .l s e r ie s FAST RECOVERY DIODES Hockey Puk Version Features • High power FAST recovery diode series ■ 2.0 to 3.0 ps recovery time ■ High voltage ratings up to 3000V ■ High current capability

lt 5237

Abstract: 2N5390
Contextual Info: TYPE 2N5390 N-P-N DARLINGTON-CONNECTED PLANAR SILICON POWER TRANSISTOR • Very High Gain — 1000 Min at 5 A • High-Speed Switching — 0.3 ¡j . s Typ ton | 3 h> Z “ 55 p ° ‘ d e v ic e sc h e m a tic o * m e c h a n ic a l d a t a 5 'a b s o l u t e m a x im u m r a t in g s a t 2 5 ° C c a se t e m p e r a t u r e u n le ss o th e r w is e n o te d

2N1907

Abstract: 2n1908 A97T Texas Germanium PW 2N GERMANIUM PNP LOW POWER TRANSISTORS 2NI907 Germanium power Germanium PNP - Low Power Transistors
Contextual Info: TYPES 2NI907, 2N1908 P-N-P ALLOY-DIFFUSED GERMANIUM POWER TRANSISTORS HIGH-FREQUENCY POWER TRANSISTORS Zz for z : p s MILITARY AND INDUSTRIAL APPLICATIONS mechanical data These transistors are in precision w elded, herm etically sealed enclosures. The mounting base provides an

s41 hal sensor

Contextual Info: PENTIUM PRO PROCESSOR AT 150 MHz, 166 MHz, 180 MHz and 200 MHz • Available at 150 MHz, 166 MHz, 180 MHz and 200MHz core speeds ■ Binary compatible with applications running on previous members of the Intel microprocessor family ■ Optimized for 32-bit applications