HEMT MARKING G Search Results

CFY75

Abstract: cfy 75 cfy 14 siemens HEMT marking P FMI 591 cfy siemens CFY 19
Contextual Info: SIEMENS CFY 75 AIGaAs/GaAs HEMT • Very low noise • Very high gain • For low-noise front end amplifiers up to 20 GHz • For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel

GSO05553

Abstract: Q62702-G117 CFH77 HEMT marking P
Contextual Info: GaAs HEMT CFH 77 Target Data Sheet • • • • Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! MW-4 Type Marking Ordering Code

ATF501P8

Abstract: ATF-501P8 ATF-501P8-BLK ATF-501P8-TR1 ATF-501P8-TR2 MO229
Contextual Info: Agilent ATF-501P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet Features • Single voltage operation • High Linearity and P1dB • Low Noise Figure Pin Connections and Package Marking The thermally efficient package

ATF-501P8

Abstract: 4570 8-pin RF 902-145 A004R ATF501P8 ATF-501P8-BLK ATF-501P8-TR1 ATF-501P8-TR2 MO229 4558 schematic diagram
Contextual Info: Agilent ATF-501P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet Features • Single voltage operation • High Linearity and P1dB • Low Noise Figure Pin Connections and Package Marking The thermally efficient package

Micro-X marking "K"

Abstract: low noise Micro-X marking "K" Micro-X Marking E RO4350B rogers HEMT marking G HEMT marking K GD-32 hemt low noise die Micro-X Marking v transistor "micro-x" "marking" 3
Contextual Info: PRELIMINARY < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=25.2GHz

Contextual Info: < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The MGF4941CL is designed for automotive application and AEC-Q101

RO4350B ROGERS

Abstract: transistor "micro-x" "marking" 3 RO4350B max current MGF4941CL GD-32 low noise Micro-X marking "K" RO4350B
Contextual Info: < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The MGF4941CL is designed for automotive application and AEC-Q101

GS 9521

Abstract: CFH120 CFH120-08 CFH120-10 1507 0745 HEMT marking K
Contextual Info: CFH120 GaAs HEMT Preliminary Datasheet Features • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers

MAX 8985

Abstract: pseudomorphic HEMT ta 7176 datasheet 8772 P CFH120 CFH120-08 CFH120-10
Contextual Info: CFH120 GaAs HEMT Datasheet Features • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers

CFY77-10

Abstract: HEMT HEMT marking K 036 906 051 VS005553
Contextual Info: SIEM ENS AIGaAs / InGaAs HEMT CFY 77 Datasheet Features * Very low noise *Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters VS005553 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type

Contextual Info: < Low Noise GaAs HEMT > MGF4934CM 4pin flat lead package DESCRIPTION The MGF4934CM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost

Contextual Info: < Low Noise GaAs HEMT > MGF4953A Leadless ceramic package DESCRIPTION The MGF4953A super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.

CFY 18

Abstract: HEMT marking D HEMT marking K VS005553
Contextual Info: SIEMENS AIGaAs / InGaAs HEMT CFY77 Datasheet Features * Very low noise •V ery high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters 4 * 2 VS005553 ESD: Electrostatic discharge sensitive device, observe handling precautions!

HEMT marking K

Abstract: marking t54 CFY 18 CFY77-08 CFY77-10 Q62702-F1549 Q62702-F1559 cfy 14 siemens marking code 51C HEMT
Contextual Info: SIEMENS AIGaAs / InGaAs HEMT CFY 77 D a t a s h e e t Features ‘ Very low noise ‘ Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters VS005553 ESD: Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: CFH400 P - HEMT Target Datasheet Features • • • • • Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz F = 0.65dB; Ga = 17.5dB @ 3V; 15mA; f=2GHz

Contextual Info: < Low Noise GaAs HEMT > MGF4953B Leadless ceramic package DESCRIPTION The MGF4953B super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing

Contextual Info: HMC752LC4 v01.0514 AMPLIFIERS - LOW NOISE - SMT GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 28 GHz Typical Applications Features This HMC752LC4 is ideal for: Noise Figure: 2.5 dB • Point-to-Point Radios Gain: 25 dB • Point-to-Multi-Point Radios P1dB Output Power: +13 dBm

H772

Contextual Info: HMC772LC4 v02.0514 AMPLIFIERS - LOW NOISE - SMT GaAs HEMT MMIC LOW NOISE AMPLIFIER, 2 - 12 GHz Typical Applications Features This HMC772LC4 is ideal for: Noise Figure: 1.8 dB • Wideband Communication Systems Gain: 15 dB • Surveillance Systems Output IP3: +25 dBm

cfy siemens

Abstract: CFY77-10 cfy77 HEMT marking P 059 906 051 CFY77-08 Q62702-F1549 Q62702-F1559 cfy 14 siemens HEMT marking K
Contextual Info: AlGaAs / InGaAs HEMT CFY 77 Datasheet Features * Very low noise * Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters

6943-3

Contextual Info: P - HEMT Transistor CFH800 Preliminary Datasheet Features ? Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz Suitable for PCS CDMA and UMTS applications

transistor Zo 105

Abstract: 6943-3 55086 HEMT marking P 05973
Contextual Info: P - HEMT Transistor CFH800 Preliminary Datasheet Features • • • • Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz

MGF4963BL

Abstract: HEMT marking K GD-32 low noise Micro-X marking "K" MGF4963B
Contextual Info: < Low Noise GaAs HEMT > MGF4963BL Micro-X type plastic package DESCRIPTION The MGF4963BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.70dB (Typ.)

transistor zo 107

Abstract: 831 transistor Transistor 933 transistor 131-6 TRANSISTOR zo 109 ma Hemt transistor
Contextual Info: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features ? Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz

MGF4964

Abstract: Micro-X marking "K" MGF4964BL transistor "micro-x" "marking" 3 low noise Micro-X marking "K" HEMT marking K Low Noise Gaas GD-32 MGF4964B MGF496
Contextual Info: < Low Noise GaAs HEMT > MGF4964BL Micro-X type plastic package DESCRIPTION The MGF4964BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.65dB (Typ.)