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    HEMT Search Results

    HEMT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CLF1G0035-200P Rochester Electronics Broadband RF power GaN HEMT Visit Rochester Electronics Buy
    CLF1G0035-100P Rochester Electronics LLC CLF1G0035-100 - 100W Broadband RF power GaN HEMT Visit Rochester Electronics LLC Buy
    CLF1G0060-30 Rochester Electronics LLC CLF1G0060-30 - 30W Broadband RF power GaN HEMT Visit Rochester Electronics LLC Buy
    CLF1G0035-50 Rochester Electronics LLC CLF1G0035-50 - 50W Broadband RF power GaN HEMT Visit Rochester Electronics LLC Buy
    CLF1G0060S-10 Rochester Electronics LLC CLF1G0060S-10 - 10W Broadband RF power GaN HEMT Visit Rochester Electronics LLC Buy
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    HEMT Price and Stock

    Broadcom Limited HEMT-3301

    EMITTER IR 940NM 100MA RADIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HEMT-3301 Bulk
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    Omega Engineering HEMTIN-040G-6

    TRANSITION JUNCTION T/C PROBE, M
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HEMTIN-040G-6 Bulk 1
    • 1 $97.55
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    Avnet Americas HEMTIN-040G-6 Bulk 4 Weeks 1
    • 1 $70.554
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    Newark HEMTIN-040G-6 Bulk 1
    • 1 $70.55
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    RS HEMTIN-040G-6 Bulk 5 Weeks 1
    • 1 $75.99
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    Vishay Intertechnologies ROX200500MFHEMT

    ROX Series High Voltage Special Purpose Metal Oxide Resistor 2 Size 500M Ohm ?1% 6W ?50 ppm/?C 2-Pin Axial Leaded Foam Pack - Bulk (Alt: ROX200500MFHEMT)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas ROX200500MFHEMT Bulk 100
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    • 1000 $17.79288
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    Vishay Intertechnologies ROX200125MFHEMT

    RES METAL OXIDE ROX-2T 125M 1% T-2 EM e3 - Bulk (Alt: ROX200125MFHEMT)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas ROX200125MFHEMT Bulk 100
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    • 1000 $17.79288
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    Vishay Intertechnologies ROX10010M0FHEMT

    RES METAL OXIDE ROX-1T 10M 1% T-2 EM e3 - Bulk (Alt: ROX10010M0FHEMT)
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    Avnet Americas ROX10010M0FHEMT Bulk 100
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    • 100 $20.586
    • 1000 $13.524
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    Find more HEMT price and stock on Findchips.com

    HEMT Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HEMT-1001 Agilent Technologies 940 nm High Radiant Emitter Original PDF
    HEMT1001 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    HEMT-3300 Agilent Technologies T-1 3/4 670 nm High Radiant Intensity Emitter Original PDF
    HEMT3300 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    HEMT-3301 Agilent Technologies 940 nm High Radiant Emitter Original PDF
    HEMT-3301 Avago Technologies 940 nm High Radiant Emitter Original PDF
    HEMT3301 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    HEMT6000 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    HEMT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GaAs S2p

    Abstract: hemt .s2p
    Text: TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Measured Performance Frequency Range: DC - 18 GHz 38 dBm Nominal Psat at 3 GHz 66% Maximum PAE 18 dB Nominal Power Gain at 3 GHz Bias: Vd = 28 - 32 V, Idq = 125 mA, Vg = -3.6 V


    Original     		PDF TGF2023-01 TGF2023-01 DC-18 0007-inch EAR99 GaAs S2p hemt .s2p

    transistor zo 107

    Abstract: 831 transistor Transistor 933 transistor 131-6 TRANSISTOR zo 109 ma Hemt transistor
    Text: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features ? Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz


    Original     		PDF OT343 CFH400 Q62702-G0116 volt-69 Rn/50 transistor zo 107 831 transistor Transistor 933 transistor 131-6 TRANSISTOR zo 109 ma Hemt transistor

    Untitled

    Abstract: No abstract text available
    Text: TGF2023-02 12 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 41 dBm Nominal Psat at 3 GHz 58% Maximum PAE 18 dB Nominal Power Gain Bias: Vd = 28 - 32 V, Idq = 250 mA, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC


    Original     		PDF TGF2023-02 TGF2023-02 DC-18 0007-inch EAR99

    TOSHIBA HEMT

    Abstract: TGI7785-120L
    Text: MICROWAVE POWER GaN HEMT TGI7785-120L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER Pout=51.0dBm at Pin=44.0dBm „ HIGH GAIN GL=11.0dB at Pin=20.0dBm „ BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE „ LOW INTERMODULATION DISTORTION


    Original     		PDF TGI7785-120L -25dBc 44dBm 20dBm 7-AA06A) TOSHIBA HEMT TGI7785-120L

    GD-30

    Abstract: InGaAs HEMT mitsubishi
    Text: May/2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM/BM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934BM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers.


    Original     		PDF May/2008 MGF4934AM/BM MGF4934BM 12GHz GD-30 InGaAs HEMT mitsubishi

    GD-30

    Abstract: MGF4931AM 77153
    Text: May/2007 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4931AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4931AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		PDF May/2007 MGF4931AM MGF4931AM 12GHz GD-30 77153

    microwave MARCONI

    Abstract: H40P NN12 P35-5123-000-200 MARCONI power
    Text: P35-5123-000-200 HEMT MMIC DRIVER AMPLIFIER, 20 - 26GHz Features • • • 23dBm Output Power @ 24GHz 12dB Gain from 20 to 26GHz Small 2 x 1mm Die Size Description The P35-5123-000-200 is a high performance 20-26GHz Gallium Arsenide driver amplifier. When 0.3mm


    Original     		PDF P35-5123-000-200 26GHz 23dBm 24GHz P35-5123-000-200 20-26GHz 20-26GHz. 463/SM/02579/000 microwave MARCONI H40P NN12 MARCONI power

    ATF-38143

    Abstract: ATF-38143-BLK ATF-38143-TR1 ATF-38143-TR2 k5 z2 Cgd01 D 1709 N 20
    Text: Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Technical Data ATF-38143 Features • Low Noise Figure Surface Mount Package SOT-343 • Excellent Uniformity in Product Specifications • Low Cost Surface Mount Small Plastic Package SOT-343 4 lead SC-70


    Original     		PDF ATF-38143 OT-343 SC-70) 5968-7868E ATF-38143 ATF-38143-BLK ATF-38143-TR1 ATF-38143-TR2 k5 z2 Cgd01 D 1709 N 20

    H40P

    Abstract: NN12 P35-5135-000-200
    Text: P35-5135-000-200 HEMT MMIC 0.5W POWER AMPLIFIER, 28GHz Features • • • Gain; 16dB typical @ 28GHz P-1dB; 27dBm typical @ 28GHz 5dB Typical Noise Figure Description The P35-5135-000-200 is a high performance 28GHz Gallium Arsenide power amplifier, capable of output powers


    Original     		PDF P35-5135-000-200 28GHz 27dBm P35-5135-000-200 28GHz 463/SM/02574/000 H40P NN12

    Marconi

    Abstract: MARCONI amplifier NN12 MARCONI power
    Text: P35-5122-000-200 HEMT DRIVER AMPLIFIER 8.5 – 10.5GHz Features • • • 26dBm Output Power @6V 18dB Typical Gain Small 2.49 x 1.4mm Die Size Description The P35-5122-000-200 is a high performance 8.5-10.5GHz Gallium Arsenide driver amplifier. This product is


    Original     		PDF P35-5122-000-200 26dBm P35-5122-000-200 100mA, 170mA 462/SM/02348/000 Marconi MARCONI amplifier NN12 MARCONI power

    MARCONI amplifier

    Abstract: 84-1LMI NN12 P35-5112-000-200
    Text: P35-5112-000-200 HEMT MMIC LNA 8.5 – 10.5GHz Features • • 19dB Gain Typical 1dB Noise Figure Description The P35-5112-000-200 is an 8.5 – 10.5GHz Gallium Arsenide low noise amplifier. This product is intended for use in a wide range of applications including telecommunications, instrumentation and electronic warfare.


    Original     		PDF P35-5112-000-200 P35-5112-000-200 462/SM/02343/200 MARCONI amplifier 84-1LMI NN12

    GD-30

    Abstract: No abstract text available
    Text: Apr./2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934CM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934CM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost


    Original     		PDF MGF4934CM MGF4934CM 12GHz GD-30

    Untitled

    Abstract: No abstract text available
    Text: RF3934 Proposed GaN WIDE-BAND POWER AMPLIFIER RoHS Compliant and Pb-Free Product Package Style: Flanged Ceramic Features „ „ „ „ „ Peak Power=120W Gain=14dB Advanced GaN HEMT Technology 48V Operation Optimized Evaluation Board Layout for 50Ω Operation


    Original     		PDF RF3934 RF3934 DSB070828

    MGF4919G

    Abstract: MGF4916G gD 679 transistor L to Ku band amplifiers GS 1223
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF491xG Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF491xG series super-low-noise HEMT High Electron OUTLINE DRAWING Unit:millimeters Mobility Transistor is designed for use in L to Ku band amplifiers. The hermetically


    Original     		PDF MGF491xG MGF491 12GHz MGF4916G MGF4919G MGF4916G MGF4919G gD 679 transistor L to Ku band amplifiers GS 1223

    l8113

    Abstract: integrated switch negative voltage generator 100Nf Pins l8113
    Text: UTC L8113 LINEAR INTEGRATED CIRCUIT FET BIAS CONTROLLER WITH POLARISATION SWITCH AND TONE DETECTION DESCRIPTION The UTC L8113 is designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs, PMR cellular telephones etc. with a


    Original     		PDF L8113 L8113 QW-R123-002 integrated switch negative voltage generator 100Nf Pins l8113

    TRW mmic

    Abstract: No abstract text available
    Text: TLH124C HEMT Image Rejection Downconverter GaAs Telecom Products Features RF frequency: 37 to 40 GHz Noise figure: 4.0 dB Conversion gain: 7.0 dB Self bias: 5V/95 mA Built-in LO drive amplifier Description and Applications The TLH124C is a monolithic HEMT low-noise image rejection downconverter designed for


    OCR Scan     		PDF TLH124C TLH124C 90-degree 50-ohm 9701455-S-J1 TRW mmic

    9701455-S-J1

    Abstract: APH184C
    Text: APH184C Ka-Band HEMT Power Amplifier GaAs Telecom Products Features • RF frequency: 27 to 31 GHz • Linear gain: >10 dB • Pout > 3 0 dBm • Unconditionally stable • Balanced design provides excellent input and output VS WR • DC power: 4.5 V at 1.1 Amps


    OCR Scan     		PDF APH184C APH184C SA051 9701455-S-J1 9701455-S-J1

    SA051

    Abstract: HEMT Amplifier
    Text: TRYw K-Band Power HEMT Amplifier APH212C Features • RF frequency: 17 to 27 GHz • Linear gain: 16 dB, typical • PldB: 31 dBm, typical • Unconditionally stable • Balanced design provides excellent input and output VSWR • DC power: 4 Vdc at 1350 mA


    OCR Scan     		PDF APH212C APH212C SA051 006/J-2 SA051 HEMT Amplifier

    Untitled

    Abstract: No abstract text available
    Text: ##?rV K-Band Medium Power HEMT Amplifier_APH196C Features • RF frequency: 17 to 30 GHz • Linear gain: >16 dB • PldB: >22 dBm Typical • Unconditionally stable • Balanced design provides excellent input and output VS WR • DC power: 4 Vdc at 400 mA


    OCR Scan     		PDF APH196C APH196C SA025 006/J-2

    ALH140C

    Abstract: UM 3842 MN1400
    Text: TRYw Ka-Band HEMT Low-Noise Amplifier ALH140C Features • RF Frequency: 24 to 41 GHz • Linear gain: 12 dB • NF: 4dB • Unconditionally stable • Balanced design provides excellent input and output VSWR • Biasable from either side of chip • PldB: 15 dB


    OCR Scan     		PDF ALH140C ALH140C compat2500 m1930 006/J-2 UM 3842 MN1400

    low noise pseudomorphic

    Abstract: No abstract text available
    Text: MwT - H4 26 GHz Low Noise Pseudomorphic HEMT GaAs FET_ MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES — 50 • 0.9 dB NOISE FIGURE AT 12 GHZ • HIGH ASSOCIATED GAIN 1241 8.4 •0.3 MICRON REFRACTORY METAL /GOLD GATE


    OCR Scan     		PDF

    Micro-X Marking 865

    Abstract: No abstract text available
    Text: S IE M E N S CFY67 HiRel K-Band GaAs Super Low Noise HEMT • HiRel Discrete and Microwave Semiconductor • Pseudo-morphic AIGaAs/lnGaAs/GaAs HEMT • For professional super low-noise amplifiers • For frequencies from 500 MHz to > 20 GHz • Hermetically sealed microwave package


    OCR Scan     		PDF CFY67 CFY67-06 CFY67-08 CFY67-08P CFY67-10 CFY67-10P CFY67-nnl: QS9000 Micro-X Marking 865

    SPF 455

    Abstract: SPF-1576 SPF 455 H 5 SPF-1676
    Text: SPF-1576, -1676 2-26 GHz Low Noise HEMT GaAs FET Preliminary Data Features - Pseudomorphic HEMT Technology - Low Noise Figure: 0.55dB Typical at 12 GHz - High Associated Gain: 10dB Typical at 12 GHz • Low Cost Ceramic Package - Tape and Reel Packaging Available


    OCR Scan     		PDF SPF-1576, SPF-1576 SPF 455 SPF 455 H 5 SPF-1676

    TRW Microwave Detector

    Abstract: TRW MICROWAVE
    Text: APH239C K-Band Power HEMT Amplifier GaAs Telecom Products Features • RF frequency: 37 to 43 GHz • Balanced design for excellent return loss • Pout max of 25 dBm • G a i n - 16 dB • Built-in power detector Self-biased first stage • Unconditionally stable


    OCR Scan     		PDF APH239C APH239C 4730x1440 E2/5042, 9701455-S-J1 9701455-1018-SJ1 TRW Microwave Detector TRW MICROWAVE