Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    HEMT MARKING P Search Results

    HEMT MARKING P Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CLF1G0035-200P
    		Rochester Electronics LLC CLF1G0035-200 - 200W Broadband RF power GaN HEMT Visit Rochester Electronics LLC Buy
    CLF1G0035-100P
    		Rochester Electronics LLC CLF1G0035-100 - 100W Broadband RF power GaN HEMT Visit Rochester Electronics LLC Buy
    CLF1G0060-30
    		Rochester Electronics LLC CLF1G0060-30 - 30W Broadband RF power GaN HEMT Visit Rochester Electronics LLC Buy
    CLF1G0035-100
    		Rochester Electronics LLC CLF1G0035-100 - 100W Broadband RF power GaN HEMT Visit Rochester Electronics LLC Buy
    CLF1G0035-50
    		Rochester Electronics LLC CLF1G0035-50 - Broadband RF power GaN HEMT Visit Rochester Electronics LLC Buy

    HEMT MARKING P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    GSO05553

    Abstract: Q62702-G117 CFH77 HEMT marking P
    Contextual Info: GaAs HEMT CFH 77 Target Data Sheet • • • • Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! MW-4 Type Marking Ordering Code


    Original     		Q62702-G117 GSO05553 GSO05553 Q62702-G117 CFH77 HEMT marking P PDF

    GS 9521

    Abstract: CFH120 CFH120-08 CFH120-10 1507 0745 HEMT marking K
    Contextual Info: CFH120 GaAs HEMT Preliminary Datasheet Features • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers


    Original     		CFH120 CFH120-08 CFH120-10 GS 9521 CFH120 CFH120-08 CFH120-10 1507 0745 HEMT marking K PDF

    MAX 8985

    Abstract: pseudomorphic HEMT ta 7176 datasheet 8772 P CFH120 CFH120-08 CFH120-10
    Contextual Info: CFH120 GaAs HEMT Datasheet Features • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers


    Original     		CFH120 CFH120-08 Q62705-K0603 CFH120-10 Q62705-K0604 MAX 8985 pseudomorphic HEMT ta 7176 datasheet 8772 P CFH120 CFH120-08 CFH120-10 PDF

    CFY77-10

    Abstract: HEMT HEMT marking K 036 906 051 VS005553
    Contextual Info: SIEM ENS AIGaAs / InGaAs HEMT CFY 77 Datasheet Features * Very low noise *Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters VS005553 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type


    OCR Scan     		VS005553 CFY77-08 CFY77-10 Q62702-F1549 Q62702-F1559 CFY77-10 HEMT HEMT marking K 036 906 051 VS005553 PDF

    CFY 18

    Abstract: HEMT marking D HEMT marking K VS005553
    Contextual Info: SIEMENS AIGaAs / InGaAs HEMT CFY77 Datasheet Features * Very low noise •V ery high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters 4 * 2 VS005553 ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		CFY77 VS005553 CFY77-08 CFY77-10 Q62702-F1549 Q62702-F1559 CFY 18 HEMT marking D HEMT marking K VS005553 PDF

    M 6965

    Abstract: HEMT marking D CFH400T 72482 HEMT marking P 74923 HEMT marking K
    Contextual Info: CFH400T P - HEMT Target Datasheet Features Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz F = 0.6 dB; Ga = 15.5 dB @ 3V; 10mA;


    Original     		CFH400T M 6965 HEMT marking D CFH400T 72482 HEMT marking P 74923 HEMT marking K PDF

    6943-3

    Contextual Info: P - HEMT Transistor CFH800 Preliminary Datasheet Features ? Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz Suitable for PCS CDMA and UMTS applications


    Original     		OT343 CFH800 Rn/50 6943-3 PDF

    transistor Zo 105

    Abstract: 6943-3 55086 HEMT marking P 05973
    Contextual Info: P - HEMT Transistor CFH800 Preliminary Datasheet Features • • • • Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz


    Original     		OT343 CFH800 OT343 D-130 Rn/50 transistor Zo 105 6943-3 55086 HEMT marking P 05973 PDF

    transistor zo 107

    Abstract: 831 transistor Transistor 933 transistor 131-6 TRANSISTOR zo 109 ma Hemt transistor
    Contextual Info: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features ? Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz


    Original     		OT343 CFH400 Q62702-G0116 volt-69 Rn/50 transistor zo 107 831 transistor Transistor 933 transistor 131-6 TRANSISTOR zo 109 ma Hemt transistor PDF

    TGA2576-FL

    Abstract: GaN hemt TGA2576
    Contextual Info: TGA2576-FL 2.5 to 6 GHz GaN HEMT Power Amplifier Applications • • • • Communications Electronic Warfare Test Instrumentation EMC Amplifier Product Features • • • • • • Functional Block Diagram Frequency Range: 2.5 – 6 GHz Psat: 45.5 dBm @ Pin = 26 dBm


    Original     		TGA2576-FL TGA2576-FL GaN hemt TGA2576 PDF

    transistor zo 107

    Abstract: 9412 transistor transistor zo 109 51687 72741 TRANSISTOR zo 109 ma CFH400 9412 opt i 72741 Hemt transistor
    Contextual Info: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features • • • • • Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz


    Original     		OT343 CFH400 Q62702-G0116 OT343 vol51 Rn/50 transistor zo 107 9412 transistor transistor zo 109 51687 72741 TRANSISTOR zo 109 ma CFH400 9412 opt i 72741 Hemt transistor PDF

    AT1504

    Abstract: AT1504R SSOP16 surface id4 d
    Contextual Info: AT1504 Preliminary Product Information FET BIAS CONTROLLER Features ˙Provides bias for GaAs and HEMT FETs ˙Drives up to four FETs ˙Dynamic FET protection ˙Drain current set by external resistor ˙Regulated negative rail generator requires only 2 external capacitors


    Original     		AT1504 AT1504 16-pin AT1504R SSOP16 surface id4 d PDF

    FET bias

    Abstract: AT1506 AT1506R SSOP20
    Contextual Info: AT1506 Preliminary Product Information FET BIAS CONTROLLER Features ˙Provides bias for GaAs and HEMT FETs ˙Drives up to four FETs ˙Dynamic FET protection ˙Drain current set by external resistor ˙Regulated negative rail generator requires only 2 external capacitors


    Original     		AT1506 AT1506 16-pin FET bias AT1506R SSOP20 PDF

    cfy siemens

    Abstract: CFY77-10 cfy77 HEMT marking P 059 906 051 CFY77-08 Q62702-F1549 Q62702-F1559 cfy 14 siemens HEMT marking K
    Contextual Info: AlGaAs / InGaAs HEMT CFY 77 Datasheet Features * Very low noise * Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters


    Original     		CFY77-08 Q62702-F1549 CFY77-10 Q62702-F1559 cfy siemens CFY77-10 cfy77 HEMT marking P 059 906 051 CFY77-08 Q62702-F1549 Q62702-F1559 cfy 14 siemens HEMT marking K PDF

    micro-X ceramic Package hemt

    Abstract: GaAs Amplifier Micro-X Marking A Micro-X, 4-Pin, Ceramic GaAs MESFET amplifier MMIC Amplifier Micro-X marking MARKING HBT mmic marking A
    Contextual Info: RF3816 Proposed CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 6GHz Typical Applications • Cellular Basestation Amplifiers and Transceivers • Narrow and Broadband Commercial and Military Radio Designs • Gain Stage or Driver Amplifiers for Linear and


    Original     		RF3816 RF3816 RF3816SB RF3816SR 100-piece RF3816TR7 RF3816PCBA-410 micro-X ceramic Package hemt GaAs Amplifier Micro-X Marking A Micro-X, 4-Pin, Ceramic GaAs MESFET amplifier MMIC Amplifier Micro-X marking MARKING HBT mmic marking A PDF

    HEMT marking P

    Contextual Info: S IE M E N S CFY66 H/Re/K-Band GaAs Super Low Noise HEMT • HiRel Discrete and Microwave Semiconductor • Conventional AIGaAs/GaAs HEMT For new design we recommend to use our pseudo-morphic HEMT CFY67 • For professional super low-noise amplifiers •


    OCR Scan     		CFY66 CFY67) CFY66-08 CFY66-08P CFY66-10 CFY66-10P CFY66-nnl QS9000 HEMT marking P PDF

    micro-X ceramic Package hemt

    Abstract: MMIC Amplifier Micro-X marking GaAs Amplifier Micro-X Marking A MMIC Amplifier Micro-X marking 4 pin MMIC Amplifier Micro-X RF3818 a1 mmic Micro-X, 4-Pin, Ceramic GaAs MESFET amplifier MARKING HBT 1233 amplifier
    Contextual Info: RF3818 Proposed CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 3GHz Typical Applications • Cellular Basestation Amplifiers and • Narrow and Broadband Commercial and Transceivers Military Radio Designs • Gain Stage or Driver Amplifiers for Linear and


    Original     		RF3818 RF3818 RF3818SB RF3818SR 100-piece RF3818TR7 RF3818PCBA-410 micro-X ceramic Package hemt MMIC Amplifier Micro-X marking GaAs Amplifier Micro-X Marking A MMIC Amplifier Micro-X marking 4 pin MMIC Amplifier Micro-X a1 mmic Micro-X, 4-Pin, Ceramic GaAs MESFET amplifier MARKING HBT 1233 amplifier PDF

    MMIC Amplifier Micro-X marking D

    Abstract: d marking "Micro-X" Micro-X Marking E GaAs Amplifier Micro-X Marking N micro-X ceramic Package hemt D marking amplifier d marking Micro-X amplifier marking _1 MMIC Amplifier Micro-X marking N Micro-X Marking D
    Contextual Info: RF3818 Proposed CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 3GHz Typical Applications • Cellular Basestation Amplifiers and • Narrow and Broadband Commercial and Transceivers Military Radio Designs • Gain Stage or Driver Amplifiers for Linear and


    Original     		RF3818 RF3818 RF3818SB RF3818SR 100-piece RF3818TR7 RF3818PCBA-410 MMIC Amplifier Micro-X marking D d marking "Micro-X" Micro-X Marking E GaAs Amplifier Micro-X Marking N micro-X ceramic Package hemt D marking amplifier d marking Micro-X amplifier marking _1 MMIC Amplifier Micro-X marking N Micro-X Marking D PDF

    HEMT Amplifier

    Abstract: amplifier TRANSISTOR 12 GHZ MMIC POWER AMPLIFIER hemt "Marking 12" mmic mmic "Marking 12" marking hpa GaAs 12 GHZ gain 2.4 ghZ rf transistor
    Contextual Info: 24 - 27 GHz GaAs High Power Amplifier MMIC 24 - 27 GHz HPA Preliminary Data Sheet • Two-Stage Monolithic Microwave Integrated Circuit MMIC HEMT Amplifier • Input/Output matched to 50 Ω • Frequency range: 24 GHz to 27 GHz • Gain > 12 dB • P–1dB > 27 dBm


    Original     		EHT09206 HEMT Amplifier amplifier TRANSISTOR 12 GHZ MMIC POWER AMPLIFIER hemt "Marking 12" mmic mmic "Marking 12" marking hpa GaAs 12 GHZ gain 2.4 ghZ rf transistor PDF

    transistor "micro-x" "marking" 3

    Abstract: micro-X ceramic Package hemt micro-X ceramic Package
    Contextual Info: RF2048 GENERAL PURPOSE AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • High Reliability Applications • Driver Stage for Power Amplifiers


    Original     		RF2048 RF2048 8000MHz. transistor "micro-x" "marking" 3 micro-X ceramic Package hemt micro-X ceramic Package PDF

    K1924

    Abstract: cw marking sot89 162190 RF Driver HEMT
    Contextual Info: ODRKGF1924-06 Electronic Components KGF1924 Issue Date:Jan 20, 2005 RF Driver HEMT GENERAL DESCRIPTION The KGF1924, housed in a ceramic package with integrated heat sink, is a discrete RF power HEMT that features high efficiency, high output power and low current operation. The KGF1924 specifications are guaranteed to


    Original     		KGF1924 ODRKGF1924-06 KGF1924, KGF1924 K1924 cw marking sot89 162190 RF Driver HEMT PDF

    amplifier TRANSISTOR 12 GHZ

    Abstract: amplifier TRANSISTOR 14 GHZ transistor amplifier 3 ghz
    Contextual Info: 27 - 31 GHz GaAs High Power Amplifier MMIC 27 - 31 GHz HPA Preliminary Data Sheet • • • • • • • Two-Stage Monolithic Microwave Integrated Circuit MMIC HEMT Amplifier Input/Output matched to 50 Ω Frequency range: 27 GHz to 31 GHz Gain > 11 dB


    Original     		EHT09219 amplifier TRANSISTOR 12 GHZ amplifier TRANSISTOR 14 GHZ transistor amplifier 3 ghz PDF

    transistor "micro-x" "marking" 3

    Abstract: micro-X ceramic Package hemt
    Contextual Info: RF2048 GENERAL PURPOSE AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • High Reliability Applications • Driver Stage for Power Amplifiers


    Original     		RF2048 RF2048 8000MHz. transistor "micro-x" "marking" 3 micro-X ceramic Package hemt PDF

    RF LNA 10 GHz

    Abstract: gaas Low Noise Amplifier amplifier TRANSISTOR 12 GHZ transistor 24 GHz RF TRANSISTOR 10 GHZ low noise 04 marking monolithic amplifier bond pull test
    Contextual Info: 24 - 32 GHz GaAs Low Noise Amplifier MMIC 24 - 32 GHz LNA Preliminary Data Sheet • • • • • • Two-Stage Monolithic Microwave Integrated Circuit MMIC HEMT Amplifier (coplanar design) Input/Output matched to 50 Ω Frequency range: 24 GHz to 32 GHz


    Original     		EHT09217 RF LNA 10 GHz gaas Low Noise Amplifier amplifier TRANSISTOR 12 GHZ transistor 24 GHz RF TRANSISTOR 10 GHZ low noise 04 marking monolithic amplifier bond pull test PDF