HEXFET III DIE Search Results

IRFC9130

Abstract: irfc130 IRLC034 IRLC024 irfcg20 IRFC9014 IRFC110 IRFC9230 irfc9120 IRFC430
Contextual Info: APPLICATION NO TE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power

HEXFET III - A new Generation of Power MOSFETs

Abstract: irf 1490 AN-964D irfc9024 AN-966 1000V P-channel MOSFET application new hexfet AN966 transistor 9527 IRFC210
Contextual Info: APPLICATION NOTE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power

transistor equivalent irf510

Abstract: 966a transistor equivalent irf740 irf460a HEXFET III - A new Generation of Power MOSFETs fet irf840 transistor equivalent irf520 IRF83Q AN949A High frequency switching AN-966A
Contextual Info: APPLICATION NOTE 966A HEXFET III: A New Generation of Power MOSFETs H EXFET is a tra d e m a rk o f In te rn a tio n a l R ectifie r by D. Grant Introduction International Rectifier has introduc­ ed a new third-generation of HEXFET power MOSFETs, the HEXFET III.

IRFZ44 equivalent

Abstract: IRFBE30 equivalent IRFBg30 equivalent IRFPE40 equivalent IRFC110 IRFP150 equivalent IRFZ14 equivalent irfp450 equivalent Irfp250 irfp460 IRFCE30
Contextual Info: International l SRectifier HEXFET Power MOSFETs Table I. HEXFET III Die Recomnn. Source Bondi ig Wire Die 1 Outline Figure mils mm Equivalent Device Type HEX Size Part Number V DS Z IRFC1Z0 100 2.400 D1 3 0.08 IRFS1Z0 1 1 1 1 1 IRFC014 IRFC110 IRFC210 IRFC214

transistor 9752

Abstract: RECTIFIER 8212 ID09 HTGB
Contextual Info: GEN-III SOT-223 HEXFET RELIABILITY REPORT page 1 Table of Contents Section I. II. III. IV. V. VI. VII. VIII. IX. X. XI. Page Executive Summary Introduction Procedure Reliability Tests - Table I Electrical Tests - Table II Test Purposes & Common Failure Mechanisms

3 phase inverter 120 conduction mode waveform

Abstract: inverter irf840 trf530 IRFP450 inverter sin wave inverter circuit diagram irfp460 inverter Three phase inverter using irfp450 mosfet Diagram irf840 pwm ac sine inverter h bridge irf840 inverter irfp460 mosfet pwm inverter
Contextual Info: Using HEXFET III in PWM Inverters for Motor Drives and UPS Systems HEXFET is a registered trademark of International Rectifier by D. Grant The PWM Inverter Introduction The advantages o f MOSFETs for high frequency pulse-width modulated (PWM) inverters and choppers for variable speed

short circuit tracer

Abstract: MOS-Gated Transistors ESD Pushbutton data sheet Simple test MOSFET Procedures AN-964
Contextual Info: IR Application Note AN-986 TITLE: ESD Testing of MOS Gated Power Transistors Notices: HEXFET is the trademark for International Rectifier Power MOSFETs Summary: Topics Covered: I. Background II. A model for the ESD test circuit III. Experimental verification

ID32

Abstract: HTGB JA113
Contextual Info: GEN-V SOT-223 HEXFET RELIABILITY REPORT page 1 Table of Contents Section I. II. III. IV. V. VI. VII. VIII. IX. X. Page Executive Summary Introduction Procedure Reliability Tests - Table I Electrical Tests - Table II Test Purposes & Common Failure Mechanisms

IRFC9130

Abstract: IRFC9140
Contextual Info: INTERN ATI ONAL RECTIFIER SbE D • 4flS54S2 QG1G101 fl ■ HEXFET Die N-Channel International l&R| Rectifier > Electrical Probe Specifications for P-Channel H E X F E T f & III Power M O S FE T Die Recommended Bond Wire S i n Hex Size 1 2 3 4 Part Number

h bridge irf840 inverter

Abstract: irf840 pwm ac sine inverter 1kva inverter circuit diagram 3 phase inverter 120 conduction mode waveform AN-967A inverter irf840 sine wave 1kva inverter circuit diagram irfp460 inverter IRFP460 full bridge irf840 pwm ac motor
Contextual Info: APPLICATION NOTE 967A Using H EXFET III in PWM Inverters for Motor Drives and UPS Systems HEXFET is a registered trademark of International Rectifier by D. Grant Introduction The advantages of M O SFETs for high frequency pulse-width modulated (P W M ) inverters and choppers for variable speed

IRC540 equivalent

Abstract: IRFC9034 irfc9024 IRFC9230 IRLC140 IRFC9220 IRLC120 IRF9540 equivalent IRF9640 equivalent IRL530 equivalent
Contextual Info: H EXFET International Power MOSFETs Table I. HEXFET III Die Continued HEX Size Part Number VDS RDS(on) Max Die (1) Outline Figure S Ö H R e C t if ie r Recomm. Source Bonding Wire mils I Equivalent Device mm type P-Channel HEXFETs 1 1 1 2 2 2 3 3 3 4 4

IRF540 n-channel MOSFET

Abstract: GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R
Contextual Info: I R , „-riJ- L . ,», IGBT, HEXFET, HEXSense and Logic Level Die in t e r n a t io n a l - INTERNATIONAL R E C T I F I E R StE D • QD102tib ? ■ IGBTs, HEXFET, HEXSENSE and LOGIC LEVEL HEXFET DIE ^ - q/-OS~ International Rectifier now support Die and Wafer sales from their European Headquarters at Oxted, England.

Contextual Info: PD-9.1421 International lö R Rectifier IRGCH50FE TARGET IRGCH50FE IGBT Die in Wafer Form 1200 V Size 5 Fast Speed 5" Wafer Electrical Characteristics Wafer Form D escription Guaranteed (Min/Max) Collector-to-Emitter Saturation Voltage 3.5V Max. Param eter

Contextual Info: PD-9.1443 International l R Rectifier IRGCH50SE TARGET IRGCH50SE IGBT Die in Wafer Form 1200 V Size 5 Standard Speed 5" Wafer Electrical Characteristics Wafer Form D escription G uaranteed (Min/Max) VcE (on) Collector-to-Emitter Saturation Voltage 3.3V Max.

Contextual Info: International IQ R Rectifier pd-9M 25 IRGCC50FE TARGET IRGCC50FE IGBT Die in Wafer Form 600 V Size 5 Fast Speed 5" Wafer Electrical Characteristics Wafer Form Description Guaranteed (Min/Max) VcE (on) Param eter Collector-to-Emitter Saturation Voltage

Contextual Info: International IQR Rectifier pd-s.uss IRGCH50KE TARGET IRGCH50KE IGBT Die in Wafer Form 1200 V Size 5 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form D escription Guaranteed (Min/Max) VcE(on) Collector-to-Emitter Saturation Voltage 3.8V Max.

Contextual Info: International I Q R Rectifier PD-9.1424 IRGCC50KE TARGET IRGCC50KE IGBT Die in Wafer Form ' 600 V Size 5 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Description Guaranteed (Min/Max) VcE (on) Collector-to-Emltter Saturation Voltage 3.0V Max.

Contextual Info: International is s r Rectifier pd-9.«3i IRGCC20UE TARGET IRGCC20UE IGBT Die in Wafer Form 600 V Size 2 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Description G uaranteed (M in/M ax) V ce (on) Parameter Collector-to-Emitter Saturation Voltage

Contextual Info: International IOR Rectifier PD-9.1427 IRGCC40KE TARGET IRGCC40KE IGBT Die in Wafer Form 600 V Size 4 Ultra-Fast Speed 5 " Wafer Electrical Characteristics Wafer Form Param eter Description G uaranteed (Min/Max) VcE (on) Collector-to-Emltter Saturation Voltage

Contextual Info: International IQ R Rectifier PD-9,1422 IRGCH40KE TARGET IRGCH40KE IGBT Die in Wafer Form 1200 V Size 4 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Description G uaranteed (Min/Max) VcE (on) Collector-to-Emitter Saturation Voltage 3.8V Max.

irgpc50m

Contextual Info: PD-9.1423 International IQ R Rectifier IRGCC50ME TARGET IRGCC50ME IGBT Die in Wafer Form 600 V Size 5 Fast Speed 5” Wafer Electrical Characteristics Wafer Form Param eter VCE (on) Description Guaranteed (Min/Max) Coliector-to-Emitter Saturation Voltage

Contextual Info: International I Q R Rectifier PD'2-498 H F 40A 060A C B TARGET HF40A060ACB Hexfred Die in Wafer Form 600 V Size 40 4" Wafer Electrical Characteristics Wafer Form P a ra m e te r D e s c rip tio n V fm BVr Forward V oltage I RM G u a ra n te e d (M in /M a x )

Contextual Info: International I Q R Rectifi G f _ TARGET PD'2-499 H F 30C 120A C B HF30C120ACB Hexfred Die in Wafer Form 1200 V Size 30 4" Wafer Electrical Characteristics Wafer Form Param eter Description Guaranteed (Min/Max) Test Conditions V fm Forward Voltage

Contextual Info: International TOR Rectifier PM-'4!1 IRGCH50ME TARGET IRGCH50ME IGBT Die in Wafer Form 1200 V Size 5 Fast Speed 5" Wafer Electrical Characteristics Wafer Form D e s c rip tio n G u a ra n te e d (M in /M ax) V c e (on) Collector-to-Em itter Saturation Voltage