HF40 Search Results

Contextual Info: Preliminary Data Sheet PD-20498 rev.B 2/04 HF40A060ACE Hexfred Die in Wafer Form 600 V Size 40 6" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)

Contextual Info: Preliminary Data Sheet PD-20497A rev. B 2/5/04 HF40C120ACE Hexfred Die in Wafer Form 1200 V Size 40 6" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)

HF40A060ACB

Abstract: HFA25TB60
Contextual Info: PD-2.498 TARGET HF40A060ACB HF40A060ACB Hexfred Die in Wafer Form 600 V Size 40 4" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current Guaranteed (Min/Max) 1.6V Max.

HFA16PB120

Abstract: HF40C120ACE
Contextual Info: Preliminary Data Sheet PD-20497 rev. A 11/98 HF40C120ACE Hexfred Die in Wafer Form 1200 V Size 40 5" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)

HF40A060ACE

Abstract: HFA25TB60
Contextual Info: Preliminary Data Sheet PD-20498 rev.B 2/04 HF40A060ACE Hexfred Die in Wafer Form 600 V Size 40 6" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)

HF40D120ACE

Abstract: IRGC25B120KB
Contextual Info: PD - 93876 HF40D120ACE Hexfred Die in Wafer Form Features • • • • • GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery • • • • Benchmark Efficiency for Motor Control Applications Rugged Transient Performance Low EMI Excellent Current Sharing in Parallel Operation

HF40E120ACE

Contextual Info: PD - 97116 HF40E120ACE Hexfred Die in Wafer Form Features • • • • • 1200V IF nom = 20A VF(typ)= 2.27V @ IF(nom) @ 25°C 125mm Wafer GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benefits • • • • Benchmark Efficiency for Applications above 20KHz

Contextual Info: International I Q R Rectifier PD'2-498 H F 40A 060A C B TARGET HF40A060ACB Hexfred Die in Wafer Form 600 V Size 40 4" Wafer Electrical Characteristics Wafer Form P a ra m e te r D e s c rip tio n V fm BVr Forward V oltage I RM G u a ra n te e d (M in /M a x )

HFA16PB120

Abstract: HF40C120ACB
Contextual Info: Previous Datasheet Index Next Data Sheet PD-2.497 TARGET HF40C120ACB HF40C120ACB Hexfred Die in Wafer Form 1200 V Size 40 4" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current

HF40C120ACE

Abstract: HFA16PB120
Contextual Info: Preliminary Data Sheet PD-20497A rev. B 2/5/04 HF40C120ACE Hexfred Die in Wafer Form 1200 V Size 40 6" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)

HF40R6H6X10H0.8

Contextual Info: Ferrite Cores R6 Series Ferrite Bead Cores 6 Holes SHAPES AND DIMENSIONS/ELECTRICAL CHARACTERISTICS 45° 6- øC B øA Dimensions mm øA 6±0.2 6±0.2 Part No. HF40R6H6X10H0.8 HF70R6H6X10H0.8 ∗at 2.5Ts 45° B 10±0.3 10±0.3 TYPICAL ELECTRICAL CHARACTERISTICS

HF40A060ACE

Abstract: HFA25TB60
Contextual Info: Preliminary Data Sheet PD-20498 rev.A 11/98 HF40A060ACE Hexfred Die in Wafer Form 600 V Size 40 5" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)

HF40A060ACB

Abstract: HFA25TB60
Contextual Info: Previous Datasheet Index Next Data Sheet PD-2.498 TARGET HF40A060ACB HF40A060ACB Hexfred Die in Wafer Form 600 V Size 40 4" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current

HF40C120ACE

Contextual Info: Preliminary Data Sheet PD-20497 rev. A 11/98 HF40C120ACE Hexfred Die in Wafer Form 1200 V Size 40 5" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)

Contextual Info: International l$2R Rectifier TARGET PD'2497 H F 40C 120A C B HF40C120ACB Hexfred Die in Wafer Form 1200 V Size 40 4" Wafer Electrical Characteristics Wafer Form Parameter V fm BVr ! rm Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current

HF40BB4.5x5x1.6

Abstract: HF70BB3 HF57BB9 HF57BB HF57BB2
Contextual Info: 9B51_BB 1/2 Ferrite Cores BB Series Ferrite Bead Cores 1 Hole øA øC SHAPES AND DIMENSIONS/ELECTRICAL CHARACTERISTICS B Part No. HF40BB1.7X1.9X0.7 HF70BB2.5X2.2X0.8 HF40BB3X5X1 HF70BB3X5X1 HF40BB3.4X3X1 HF70BB3.4X3X1 HF70BB3.4X6X1 HF70BB3.5X3X1.3 HF70BB3.5X5X0.8

HF40C120ACB

Abstract: HFA16PB120
Contextual Info: PD-2.497 TARGET HF40C120ACB HF40C120ACB Hexfred Die in Wafer Form 1200 V Size 40 4" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current Guaranteed (Min/Max) 2.6V Max.

mt 15003

Abstract: HF40 23006 SH 13003 HF70SH21X0 27503 HF57 HF70 10hf40 HF70SH25X1X15
Contextual Info: 1/5 EMC対策用フェライトコア フラットケーブル・フレキシブル基板用 SHシリーズ（角形） 特長 ●フラットケーブル・フレキシブル基板用として一体型と分割 型とを多種類用意しております。また、小スペースに合わせた

HF40MH27X28X9

Abstract: mh series HF70MH
Contextual Info: Ferrite Cores MH Series For IC and Connector Multiple Holes FEATURES • The MH Series provides simple, effective EMC suppression at terminal pins. Terminal pins that can be inserted include those of DIP type ICs, DIP IC sockets, and grid square type connector

CK3A

Contextual Info: Pin Information for the Arria V 5AGTFD3 Device Version 1.0 Note 1 Bank Number VREF PinName/Function (2) VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0

ta8172

Abstract: t 3866 transistor equivalent transistor uhf circulator t 3866 power transistor t 3866 transistor 5257 transistor rca rf power transistor 30w 420 NPN Silicon RF Transistor Allen-Bradley 1397 Allen-Bradley resistors
Contextual Info: File No. 656. RF Power Tran sisto rs Solid State Division 4 .n a 7 fì 40971 30-W and 45-W, 12.5-V, UHF Mobile, Silicon N-P-N Overlay Transistors With Internally Mounted Input-Matching Networks Features: • Internally mounted input " T " matching networks

Contextual Info: Pin Information for the Arria V 5AGXFB1 Device Version 1.5 Note 1 Bank Number VREF PinName/Function (2) VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0

Contextual Info: Pin Information for the Arria V 5AGXFB3 Device Version 1.5 Note 1 Bank Number VREF PinName/Function (2) VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0 VREFB3AN0

HF55BTS

Abstract: HF55BHY3 HF55BHY HF70BTL3 HF55BT hf55bhw hf70btl HF55BHW3.5X6 HF55BHW3 HF55BTL3.5X4.5R-AG
Contextual Info: 1/2 003-01 / 20030827 / e9533_bt.fm B Series Ferrite Cores Ferrite Bead Cores Lead B series are easy to handle and are supplied in various materials, shapes and packaging styles to meet for users’ requests. FEATURES MATERIAL CHARACTERISTICS • Appropriate materials and shapes can be selected from various