HFE 2500 Search Results

PCR406

Abstract: PCR406 equivalent HIT5609 2SA928A equivalent pcr406 2212PA 9601KA 9103N 2sC5200, 2SA1943, 2sc5198 2SC3807 equivalent
Contextual Info: 芯片型号 典型成品型 号 极 性 HFE MIN HFE MAX HFE IC mA HFE VCE(V) VCESAT(V) MAX VCESAT(V) IC(mA) VCESAT(V) IB(mA) 背面金 属 典型封装形 式 2007NA 2N3904 N 0.2 0.625 65 43 6 80 300 10 1 0.2 10 1 金 TO-92 2007PA 2N3906 P 0.2 0.625 45 43

MMS8050-L

Abstract: 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664
Contextual Info: TM Micro Commercial Components SMALL SIGNAL&POWER TRANSISTORS MCC Part Number VCEO V IC (A) hFE @ VCE & IC VCE(sat) & VBE(sat) @ IC & IB hFE hFE VCE IC Min. Max. (V) (mA) VCE(sat) VBE(sat) Max.(V) Max.(V) fT @ VCE & IC Polarity IC IB fT Min. TPY. fT Max.

TPT5609

Abstract: SS8550 sot-23 Y2 sot-23 npn marking code cr SS8050 sot-89 Y1 6B sot 363 2N3904 SOT-23 MARKING CODE S9018 j6 sot-23 Marking 2TY SOT 363 marking CODE 2H MJE13003 2A
Contextual Info: MCC TM Micro Commercial Components SMALL SIGNAL &POWER TRANSISTORS VCEO Part No hFE @ VCE & IC IC Polarity VCE sat & VBE(sat) @ IC & IB fT @ VCE & IC VCE IC VCE(sat) VBE(sat) IC IB fT Min. fT Max. VCE IC hFE hFE Max. (V) (mA) Max.(V) Max.(V) (mA) (mA) (MHz)

hFE-75

Abstract: g14a 2SD886 2SD886A 800-1500
Contextual Info: 2SD886, 2SD886A 2SD886, 2SD886A V IJ =i ^ N PN = m & W l 7 l s — f M / S i NPN Triple Diffused Planar « ra n « * , &mmnt M^m/mgh hFE, AF Power Amplifier 10.5 + 0.5 • 4# ^ /F e a tu re s • U nit ! mm £ hFE t5 ''S 5 / H i g h hFE 4.8max. 9.8max. Om

transistor mj11032 equivalent

Abstract: transistor mj11028 equivalent MJ11032 equivalent MJ11028-29 Transistor 3296 Variable Resistor 1k ohm 2SC493 AMPLIFIER 2SD718 2sb688 schematic 2sd717 MJ11030 equivalent BU326
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 Min @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc

103 transistor

Abstract: B1183 2SB1183F5 marking code SSs 2SD1759 transistor PNP 2sb transistor LB 122 transistor
Contextual Info: 2SB1183F5 Transistor, PNP, Darlington pair Features Dimensions Units : mm available in CPT F5 (SC-63) package 2SB1183F5 (CPT F5) package marking: B1183*-0, where ★ is hFE code and □ is lot number Darlington connection provides high dc current gain (hFE)

B1316

Abstract: DIODE B1316 B-1316 2SB1316F5 PACKAGE MARKING f5 transistor 2SB B131-6 DIODE 2FL 2fl marking diode 2fl marking
Contextual Info: 2SB1316F5 Transistor, PNP, Darlington pair Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: B1316-A-Q, where ★ is hFE code and □ is lot number • Darlington connection provides high dc current gain (hFE) •

D2318

Contextual Info: 2SD2318F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: D2318*Q, where ★ is hFE code and □ is lot number high DC current amplification, typically hFE = 1000 • low collector saturation voltage,

D1980

Abstract: 2sd darlington MARKING CODE f5 diode marking code 15h marking 7T transistor TRANSISTOR CD 263 2SD1980 2SD1980F5 damper diode darlington npn transistor t f5 j
Contextual Info: 2SD1980F5 Transistor, NPN, Darlington pair Features • available in CPT F5 SC-63 package • package marking: D1980-AQ, where ★ is hFE code and □ is lot number • Darlington connection provides high DC current gain (hFE) • damper diode is incorporated

2SD1259

Abstract: 2SD1259A
Contextual Info: Power Transistors 2SD1259, 2SD1259A Silicon NPN triple diffusion planar type 1.5±0.1 10.0±0.3 1.0±0.1 1.5max. 1.1max. 2.0 ● High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE N type package enabling direct soldering of the radiating fin to

D1980

Abstract: diode marking F5
Contextual Info: 2SD1980F5 Transistor, NPN, Darlington pair Features Dimensions Units : mm • • available in CPT F5 (SC-63) package package marking: D1980*Q, where ★ is hFE code and □ is lot number • Darlington connection provides high DC current gain (hFE) damper diode is incorporated

2SD1259

Abstract: 2SD1259A
Contextual Info: Power Transistors 2SD1259, 2SD1259A Silicon NPN triple diffusion planar type 1.5±0.1 10.0±0.3 1.0±0.1 1.5max. 1.1max. 2.0 ● High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE N type package enabling direct soldering of the radiating fin to

Contextual Info: 2SB1181F5 Transistor, PNP Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: B1181 where ★ is hFE code and ta is lot number • high breakdown voltage and large current capability: VCE0 = -80 V, IC = -1 A • good hFE linearity

2SD2318F5

Contextual Info: 2SD2318F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: D 2 3 18 *Q , where ★ is hFE code and □ is lot number • high DC current amplification, typically hFE = 1000 • low collector saturation voltage,

D2158

Abstract: 2SD2158 2SD2158A 5d215
Contextual Info: Power T ransisto 1,^38054 GG113Ô7 mb • P N C 2 SD2158, 2SD2158A 2SD2158, 2SD2158A Silicon NPN Triple-Diffused Planar Type High DC Current Gain Iife , Power Amplifier ■ Features • High DC current gain (Hfe) • Good linearity of DC current gain (hFE)

Contextual Info: Power Transistors 2SD1259, 2SD1259A 2SD1259, 2SD1259A Silicon NPN Triple-Diffused Planar Type • Package Dimensions High DC Current Gain hFE , Power Amplifier ■ Features • High DC c u rre n t gain (hFE) • Good linearity of DC cu rre n t gain (I i f e )

B1183

Abstract: Darlington pair IC single
Contextual Info: 2SB1183F5 Transistor, PNP, Darlington pair Features Dimensions Units : mm • • • • available in CPT F5 (SC-63) package package marking: B1183*Q, where ★ is hFE code and Q is lot number Darlington connection provides high dc current gain (hFE) includes 4 k£2 (typical) base-to-emitter

MJE13005A

Abstract: MJ4361 MJ3237 MJE10001 MJ2901 MJ9000 MJ430 MJE240 MJE4923 MJ2252
Contextual Info: STI Type: MJ13330 Notes: Polarity: NPN Power Dissipation: 175 VCEV: 400 VCEO: 200 ICEV: 400 ICEV A: .25 hFE: 8.0 hFE A: 15 VCE: 1.5 VBE: 1.8 IC: 10 COB: 400 fT: 5.0 Case Style: TO-204AA/TO-3: Industry Type: MJ13330 STI Type: MJ13101 Notes: Polarity: NPN Power Dissipation: 175

b1316

Abstract: B131-6
Contextual Info: Transistor, PNP, Darlington pair 2 S B 1 3 1 6 F 5 Features • available in CPT F5 SC-63 package • package marking: B1316*Q , where ★ is hFE code and □ is lot number • Darlington connection provides high dc current gain (hFE) • damper diode is incorporated

1545M

Contextual Info: h 7 > v 7* £ /Transistors 2SC1545M/2SC4017 Z5C 1545M A Q A ^ A J ^-u>h> ^ ^ Epitaxial Planar NPN Silicon Darlington Transistors Ü fÜ Î# iS ti/H ig h Gain Amp. * ^Jß-^-ÜEI/Dimensions (Unit : mm) 1) ? - ' ) > h > * £ * * ? * hFE T * 5 = hFE= 50000 (Typ.)

2SD1259

Abstract: 2SD1259A
Contextual Info: Power T ransistors 2SD1259, 2SD1259A 2SD1259, 2SD1259A Silicon NPN Triple-Diffused Planar Type Package Dim ensions High D C Current Gain hFE , Power Amplifier • Features • H igh DC c u r re n t gain (I i f e ) • G ood lin e a rity o f D C c u r re n t gain (hFE)

equivalent 2N6040

Abstract: 2N6043 data sheet 400 watts amplifier circuit diagram 2N6040 2N6041 2N6042 2N6043 2N6044 2N6045 2NXXXX
Contextual Info: PNP 2N6040, 2N6042, (NPN) 2N6043*, 2N6045* *Preferred Device Plastic Medium−Power Complementary Silicon Transistors . . . designed for general−purpose amplifier and low−speed switching applications. • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc

2N6040

Abstract: 2N6041 2N6042 2N6043 2N6044 2N6045
Contextual Info: ON Semiconductor PNP Plastic Medium-Power Complementary Silicon Transistors 2N6040 2N6042 2N6043 * NPN 2N6045* . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain – hFE = 2500 Typ) @ IC = 4.0 Adc

2N6042

Abstract: 2N6042 equivalent
Contextual Info: PNP 2N6040, 2N6042, (NPN) 2N6043*, 2N6045* *Preferred Device Plastic Medium−Power Complementary Silicon Transistors . . . designed for general−purpose amplifier and low−speed switching applications. • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc