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    hfp10n60s

    Contextual Info: BVDSS = 600 V RDS on typ = 0.67 Ω HFP10N60S ID = 9.5 A 600V N-Channel MOSFET TO-220 FEATURES q Originative New Design 1 q Superior Avalanche Rugged Technology q Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source q Very Low Intrinsic Capacitances


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    HFP10N60S O-220 54typ hfp10n60s PDF