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HGTG32N60E2 Price and Stock

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Rochester Electronics LLC HGTG32N60E2 IGBT 600V 50A TO-247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HGTG32N60E2	Bulk			40	1 - 10 - 100 $7.51 1000 $7.51 10000 $7.51	Buy Now
Harris Semiconductor HGTG32N60E2 HGTG32N60E2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical ()	HGTG32N60E2		1,181		42	1 - 10 - 100 $9.025 1000 $9.025 10000 $9.025	Buy Now
	HGTG32N60E2		1,098		42	1 - 10 - 100 $9.025 1000 $9.025 10000 $9.025	Buy Now
	HGTG32N60E2		390		42	1 - 10 - 100 $9.025 1000 $9.025 10000 $9.025	Buy Now
	HGTG32N60E2		300		42	1 - 10 - 100 $9.025 1000 $9.025 10000 $9.025	Buy Now
Rochester Electronics	HGTG32N60E2		2,969		1	1 - 10 - 100 $6.86 1000 $6.14 10000 $5.78	Buy Now

HGTG32N60E2 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
HGTG32N60E2		Harris Semiconductor	32A, 600V N-Channel IGBT		Original	PDF	48.92KB	4
HGTG32N60E2		Intersil	32A, 600V N-Channel IGBT		Original	PDF	34.16KB	4

HGTG32N60E2 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
G32N60e2 Abstract: HGTG32N60E2 AN7260 AN7254 hgtg32n60 Contextual Info: HGTG32N60E2 S E M I C O N D U C T O R 32A, 600V N-Channel IGBT April 1995 Features Package • 32A, 600V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time - 600ns EMITTER COLLECTOR GATE COLLECTOR BOTTOM SIDE METAL • High Input Impedance	Original	HGTG32N60E2 O-247 600ns 150oC. 1-800-4-HARRIS G32N60e2 HGTG32N60E2 AN7260 AN7254 hgtg32n60	PDF
G32N60E2 Abstract: AN7254 AN7260 HGTG32N60E2 Contextual Info: HGTG32N60E2 32A, 600V N-Channel IGBT April 1995 Features Package • 32A, 600V JEDEC STYLE TO-247 • Latch Free Operation • Typical Fall Time - 600ns EMITTER COLLECTOR GATE COLLECTOR BOTTOM SIDE METAL • High Input Impedance • Low Conduction Loss Description	Original	HGTG32N60E2 O-247 600ns 150oC. G32N60E2 AN7254 AN7260 HGTG32N60E2	PDF
igbt 400V 20A Abstract: igbt 500V 15A diode 500v 10A diode 10a 400v 20A 500v igbt igbt 1000v 10A igbt 1200V 20A DIODE 20A igbt 400V 5A current sensing 400V Contextual Info: I- MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS IGBTs PAGE SELECTION G U ID E .	OCR Scan	HGTD6N40E1, HGTD6N50E1, HGTD10N40F1, HGTD10N50F1, HGTH12N40C1, HGTM12N40C1, HGTP10N40C1, HGTM12N60D1 HGTP12N60D1 HGTH20N40C1, igbt 400V 20A igbt 500V 15A diode 500v 10A diode 10a 400v 20A 500v igbt igbt 1000v 10A igbt 1200V 20A DIODE 20A igbt 400V 5A current sensing 400V	PDF
TRANSISTOR BIPOLAR 400V 20A Abstract: igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT Contextual Info: — MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS PAGE SELECTION G U ID E .	OCR Scan	HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S HGTP6N40E1D, HGTP6N50E1D HGTP10N40C1, HGTH12N40C1, HGTP10N40C1D, HGTP10N40E1D, TRANSISTOR BIPOLAR 400V 20A igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT	PDF
Contextual Info: HG TG32N60E2 & 32A, 600V N-Channel IGBT D ecember 1993 Features Package • 32 Amp, 600 Volt JEDEC STYLE TO-247 TOP VIEW • Latch Free Operation • Typical Fall Time - 600ns • High Input Impedance • Low Conduction Loss COLLECTOR BOTTOM SIDE METAL '	OCR Scan	TG32N60E2 O-247 600ns	PDF
AL-370-134 Contextual Info: HARRIS SEHICOND SECTOR bûE D 4 3 0 2 27 1 0 0 5 0 0 5 7 Q3b HAS HGT1E50N60E2HB 600V/50A IGBT and Diode Half Bridge Module December 1993 Package Features • Latch Free Operation • Typical Fall Time - 400ns • High Input Impedance • Low Conduction Loss	OCR Scan	HGT1E50N60E2HB 00V/50A 400ns HGT1E50N60E2HB HGTG32N60E2) AL-370-134) AL-370-134	PDF
Contextual Info: ! ä s H G T G 3 2 N 6 E 2 32A, 600V N-Channel IGBT April 1995 Package Features • 32A ,600V J E D E C S T Y L E T O -2 4 7 • Latch Free Operation • Typical Fall Time - 600ns • High Input Im pedance • Low C onduction Loss Description The IGBT is a M OS gated high voltage switching device com bin	OCR Scan	600ns	PDF
Q2N4401 Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751 Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog	Original	RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751	PDF
equivalent data book of 10N60 mosfet Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40 Contextual Info: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:	OCR Scan	1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40	PDF
G32N60E2 Contextual Info: HG TG32N60E2 Semiconductor 32A, 600V N-Channel IGBT A pril 1995 Package Features • 32A, 600V JEDEC STYLE TO-247 EMITTER • Latch Free Operation • Typical Fall Time - 600ns • High Input Impedance • Low Conduction Loss Description The IGBT is a M OS gated high voltage switching device com bin	OCR Scan	TG32N60E2 O-247 600ns G32N60E2	PDF