HGTP10N50 Search Results

10N40E

Abstract: 10n40e1d HGTP10N40E1D HGTP10N40C1D HGTP10N50C1D HGTP10N50E1D ls25 diode diode OA-75
Contextual Info: bSE HARRIS SEtllCOND SECTOR H A R R I S S E M I C O N D U C T O R 1> Bfl M 3G 22 71 005D2b4 850 H H A S HGTP10N40C1D, HGTP10N40E1D HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Package Features

IGBT 500V 5A

Abstract: HGTP10N50F1D
Contextual Info: HGTP10N40F1D HGTP10N50F1D HGTP10N50F1D il HARRIS \m3 s b m . o o k o u c t o . 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Packages Features • 10 Amp, 400 and 500 Volt JEDEC TO-220AB TOP VIEW • Latch Free Operation

diode 10a 400v

Abstract: HGTP10N50F1D 10N40F1D 10N50F1 HGTP10N40F1D TRI 328 ic HGTP10N50
Contextual Info: HGTP10N40F1D, HGTP10N50F1D S E M I C O N D U C T O R 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 10A, 400V and 500V JEDEC TO-220AB • Latch Free Operation EMITTER • Typical Fall Time < 1.4µs COLLECTOR

10n50c1d

Abstract: 10N50E1D 10N40E ultrafast diode 10a 300v 50E1D 10N50E1 400v 5A 1Y 10N40C1
Contextual Info: m l-L A J R F R IS tip s E M , c o N D u c T o R HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Aprii 1995 Features Package • 10A, 400V and 500V JEDEC TO-22QAB • ^CE ON ' 2.5V Max.

Diode LT 443

Abstract: diode lt 823 948 LG DIODE gep 45 diode 100A-4V HGTP10N40C1D
Contextual Info: rjn HARRIS VMJ s e m i c o n d u c t o r HGTP10N40C1D, HGTP10N40E1D HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Package Features JE D E C TD-220AB • 10 Amp, 400 and 500 Volt T O P VIEW • V c e o n 2.5V Max.

10n50c1d

Abstract: 10N50E1D 10n40c HGTP10N40C1D HGTP10N40E1D HGTP10N50C1D HGTP10N50E1D 10N50C1 10n50c 50C1D
Contextual Info: HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D S E M I C O N D U C T O R 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 10A, 400V and 500V JEDEC TO-220AB • VCE ON : 2.5V Max. EMITTER COLLECTOR

10N40F1D

Abstract: 10N50F1D GE 639 transistor 10n50 10N50F1 HGTP10N50F1D GEP diode RN2512
Contextual Info: HGTP10N40F1D, HGTP10N50F1D îs j h a r r i s t u » ™ 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Aprii 1995 Package Features • 10A, 400V and 500V JEOEC TO-220AB • Latch Free Operation EMITTER • Typical Fall Time < 1.4|iS

diode 10a 400v

Abstract: 200v dc motor igbt ultrafast diode 10a 400v 10N40F1D ge 047 TRANSISTOR HGTP10N40F1D HGTP10N50F1D 10N50F1
Contextual Info: HGTP10N40F1D, HGTP10N50F1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 10A, 400V and 500V JEDEC TO-220AB • Latch Free Operation EMITTER • Typical Fall Time < 1.4µs COLLECTOR GATE • High Input Impedance

Contextual Info: HA RR IS S E M I C O N D S E CT OR bflE D • d ì h a r f r is KMJ H 3 D2 27 1 D G S G H b l 31=2 H H A S HGTP10N40F1D HGTP10N50F1D S E -.C O N D U C T O » 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Packages Features

10n50c1d

Abstract: 10N50E1D 10n40c 10N40E 10n50c 10N50C1 10n40 diode 10a 400v 10N40C1 10N50E1
Contextual Info: HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 10A, 400V and 500V JEDEC TO-220AB • VCE ON : 2.5V Max. EMITTER COLLECTOR GATE • TFALL: 1µs, 0.5µs

Contextual Info: HARRIS SEtlICOND SECTOR Ì l ì H A R R IS VM J s e m .c o n d u c t o r bflE » Bi M3GE271 OGSOEbM 660 * H A S HGTP10N40C1D, HGTP10N40E1D HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Package

HGTH20N40E1D

Abstract: TO218AC HGTG20N50 TO-220AB 5-lead IGBT Guide
Contextual Info: HARRIS IGBT PRODUCT LINE Selection Guide IGBTs CO HARRIS IGBT PRODUCT LINE Continued 1. Icm = maximum continuous current rating at Tc = +90°C. 2. ICM = maximum pulsed current rating. 3. tp measured at Tc = +150°C. Selection Guide SHADING Indicates DEVELOPMENTAL PRODUCTS

g10n50c1

Abstract: G10N50E1 HGTP10N40E1 50E1 HGTH12N40C1 HGTH12N40E1 HGTH12N50C1 HGTH12N50E1 HGTP10N40C1 HGTP10N50C1
Contextual Info: HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 S E M I C O N D U C T O R 10A, 12A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC • 10A and 12A, 400V and 500V EMITTER • VCE ON : 2.5V Max. COLLECTOR • TFI: 1µs, 0.5µs

12N50E

Abstract: 12N50E1 10N50E1 g10n50c1 10N50C1 A 933 S transistors 10N40E1 12N50C1 tp10n40c TP10N40
Contextual Info: r r I i- i a c a m e ; <Ü h g t p i 0N40C1, 40E1, s o c i , 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 o? 10A, 12A, 400V and 500V N-Channel IGBTs A p ril 1 9 9 5 Features Packages H G TH -TY P E S JE D E C TO -218A C • 10A and 12A, 400V and 500V • ^CE ON ’ 2.5V Max.

TRANSISTOR BIPOLAR 400V 20A

Abstract: igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT
Contextual Info: — MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS PAGE SELECTION G U ID E .

kc 637

Contextual Info: HARRIS SEÎIICOND SECTOR m U U HARRIS S E M I C O N D U C T O R bßE » • M3D2271 D O S D n S HGTH12N40C1, 40E1, 50C1, 50E1 HGTM12N40C1, 40E1, 50C1, 50E1 HGTP10N40C1, 40E1, 50C1, 50E1 10A, 12A, 400V and 500V N-Channel IGBTs December 1993 Packages Features

hgtm

Abstract: HGTM12N40E1
Contextual Info: HGTH12N40C1, 40E1, 50C1, 50E1 HGTM12N40C1, 40E1, 50C1, 50E1 HGTP10N40C1, 40E1, 50C1, 50E1 HARIRIS SEMICONDUCTOR 10A, 12A, 400V and 500V N-Channel IGBTs December 1993 Packages Features HGTH-TYPES JEDEC TO-21BAC TOP VIEW • 10A and 12A, 400V and 500V • V CE ON

Q2N4401

Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog

g10n50c1

Abstract: G10N50E1 ge 40e1 50E1 HGTH12N40C1 HGTH12N40E1 HGTH12N50C1 HGTH12N50E1 HGTP10N40C1 HGTP10N40E1
Contextual Info: HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 10A, 12A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC • 10A and 12A, 400V and 500V EMITTER • VCE ON : 2.5V Max. COLLECTOR • TFI: 1µs, 0.5µs GATE COLLECTOR

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Contextual Info: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning: