HI SPEED ,TO-220, TRANSISTOR Search Results

TRANSISTOR 400V 500mA

Abstract: HLB1245
Contextual Info: HI-SINCERITY Spec. No. : HE200205 Issued Date : 2001.04.01 Revised Date : 2004.11.03 Page No. : 1/4 MICROELECTRONICS CORP. HLB1245 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-220 The HLB1245 is designed for high voltage, high speed switching inductive circuits,

HTIP112

Abstract: HE-20
Contextual Info: HI-SINCERITY Spec. No. : HE200203 Issued Date : 2000.08.01 Revised Date : 2004.11.19 Page No. : 1/5 MICROELECTRONICS CORP. HTIP112 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-220 The HTIP112 is designed for use in general purpose amplifier and low-speed

HTIP117

Contextual Info: HI-SINCERITY Spec. No. : HE200204 Issued Date : 2000.08.01 Revised Date : 2004.11.19 Page No. : 1/4 MICROELECTRONICS CORP. HTIP117 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-220 The HTIP117 is designed for use in general purpose amplifier and low-speed

HTIP107

Contextual Info: HI-SINCERITY Spec. No. : HE6735 Issued Date : 1994.08.10 Revised Date : 2004.11.19 Page No. : 1/5 MICROELECTRONICS CORP. HTIP107 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-220 The HTIP107 is designed for use in general purpose amplifier and low-speed switching applications.

DARLINGTON TIN

Abstract: HTIP122
Contextual Info: HI-SINCERITY Spec. No. : HE6712 Issued Date : 1993.01.13 Revised Date : 2004.11.19 Page No. : 1/5 MICROELECTRONICS CORP. HTIP122 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-220 The HTIP122 is designed for use in general purpose amplifier and low-speed switching applications.

DARLINGTON TIN

Abstract: HTIP127 transistor c-1000 transistor b 40 Ic-5A
Contextual Info: HI-SINCERITY Spec. No. : HE6713 Issued Date : 1993.01.13 Revised Date : 2004.11.19 Page No. : 1/5 MICROELECTRONICS CORP. HTIP127 PNP EPITAXIAL PLANAR TRANSISTOR Description TO-220 The HTIP127 is designed for use in general purpose amplifier and low-speed switching applications.

HTIP102

Contextual Info: HI-SINCERITY Spec. No. : HE6734 Issued Date : 1995.02.08 Revised Date : 2004.11.19 Page No. : 1/5 MICROELECTRONICS CORP. HTIP102 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-220 The HTIP102 is designed for use in general purpose amplifier and low-speed switching applications.

ECG2561

Abstract: ECG2575 ECG2577 TO-220J ECG2580 npn 60 volts 7 Amps ECG2559 ECG2560 ECG2562 ECG2563
Contextual Info: Transistors con t'd ECG Typ« Description and Application (M axim um Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts bvcbo Collector To Emitter Volts b vCEO Base to Emitter Volts b v EBO Max. Collector Current l£ Amps Max. Device Diss. Pn

transistor ECG 152

Abstract: Bt 2313 transistor outlines transistor ecg36 TRANSISTOR ecg 379 ECG157 123AP transistor ECG 332 Philips ECG 152 ECG 3041
Contextual Info: PHILIP S E C 6 INC S4E D Transistors cont d ECG Type ECG36 NPN-Si, Pwr Amp, Hi Speed ECG36MP* Switch (Compì to ECG37) MECG bbS3TSfl DDD714b (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo Description and Application

transistor ecg36

Abstract: transistor ECG 152 TRANSISTOR ecg 379 transistor. ECG 123AP transistor ECG 332 ecg 126 transistor TRANSISTOR ECG 69 TRANSISTOR Outlines ecg 123 transistor transistor pnp ecg 180
Contextual Info: PHILIP S E C 6 INC S4E D Transistors cont d ECG Type Description and Application ECG36 NPN-Si, Pwr Amp, Hi Speed ECG36MP* Switch (Compì to ECG37) • bbS3TSfl DDD714b MECG (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo

NPN MATCHED PAIRS

Abstract: 200 watts audio amp power transistors pnp NPN pnp MATCHED PAIRS NTE388 NTE61 NTE60 NTE6061 PNP 5GHz t0202 NTE58
Contextual Info: BI-POLAR TRANSISTORS NTE TVpe Number Polarity and Material Description and Application 59 PNP-Si High Pwr Audio Output Compl to N TE 58 60 NPN-Si High Pwr Audio, Disk Head , Positioner, Linear Applications (Compl to NTE61) 60MP NPN-Si Matched Pair of NTE60

BUH1015

Abstract: BUH1015HI T218 new 21 inch colour tv circuit diagram buh 415
Contextual Info: BUH1015 BUH1015HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED APPLICATIONS: ■ HORIZONTAL DEFLECTION FOR COLOUR TV AND MONITORS DESCRIPTION The BUH1015and BUH1015HI are manufactured

Contextual Info: BUH1015 BUH1015HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED APPLICATIONS: ■ HORIZONTAL DEFLECTION FOR COLOUR TV AND MONITORS DESCRIPTION The BUH1015and BUH1015HI are manufactured

transistor pnp ecg 180

Abstract: Transistor 123AP 123AP transistor BU 102A transistor fet ecg transistor. ECG 123AP 4511 gm Bt 2313 transistor t18 FET ecg 123 transistor
Contextual Info: PHILIPS E C G INC S4E D Transistors icont'd ECG Type D escription and A p plicatio n • bbSBTEfl DDDTIH? &12 ■ E C G Maximum Ratings at T c = 25°C Unless Otherwise Noted) C ollector To Base V olts C ollector To E m itter V olts Base to E m itter V olts

TRANSISTOR FS 2025

Abstract: BUH1015
Contextual Info: SGS-THOMSON !LiM@iO gS BUH1015 BUH1015HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED APPLICATIONS: . HORIZONTAL DEFLECTION FOR COLOUR TV AND MONITORS DESCRIPTION

Contextual Info: 7 T 2 S237 QQ26^21 M • '3 3 » / 3 SGS-THOMSON B U X 1 1 N S G S-THOMSON 30E D HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR DESC RIPTIO N The BUX11 is a silicon multiepitaxial NPN transis­ tor in Jedec TO-3 metal case, intended for use in switching and linear applications in military and in­

Bt 2313

Abstract: Transistor 123AP transistor t18 FET transistor BD 263 transistor ECG 152 transistor ecg 226 123ap Philips ECG 152 ic 2429 ECG24
Contextual Info: PHILIPS E C G INC S4E D Transistors icont'd ECG Type Description and Application • bbSBTEfl DDDTIH? &12 ■ E C G Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo Collector To Emitter Volts b v Ceo Base to Emitter Volts

diode 1NU

Abstract: 2SK1115 diode 1NU 0 b
Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- 7r-MOSm 2SK1115 HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS DC-DC CONVERTER,RELAY DRIVE AND HOTOR DRIVE APPLICATIONS. Unit in mm 3.6±0.2 10.3MAX. 3L1 FEATURES: • 4-Volt Gate Drive

TRANSISTOR 1300 1b

Contextual Info: TO SH IB A D I S C R E T E / O P T O 45E ß • T C H T B S D DDlTTfib □ ■ T0S4 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (ir - YTFP452 MOSI) T 1 INDUSTRIAL APPLICATIONS Unit ln HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR

YTF630

Abstract: V/YTF630
Contextual Info: YTF630 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O S i i INDUSTRIAL APPLICATIONS HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. U nit in mn CHOPPER REGULATOR,DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. 10.3MAX. I- ¿ 3 .6iO.2 - FEATURES:

Contextual Info: r z T SCS-THOM SON Ä 7 / KiilD £[Ri(o l[Llig¥!Hi [iSDei STV55N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STV55N06L V dss RDS(on) Id 60 V < 0.023 f l 55 A • . . . . . . . TYPICAL Rds(oii) = 0.02 Q AVALANCHE RUGGED TECHNOLOGY

HA 1370 schematics

Abstract: CMOS XNOR XOR NAND2 NAND3 ic ttl and not xor nor xnor or MICRON POWER RESISTOR 2W ECL IC NAND
Contextual Info: PRELIMINARY Semiconductor December 1990 NGM Series ABiC BiCMOS/ECL Gate Arrays General Description Features The NGM Series is a new family of mixed ECL and BiCMOS gale arrays based on National’s revolutionary 0.8 micron drawn ABiC BiCMOS process. The NGM Series is the first

D40C7

Contextual Info: 27E D HARRI S S E M I C O N D S E CT OR • 43p22-?l 0020273 ö Bi HAS _ F ile N u m b e r D40C Series 15.1 0.5-Ampere N-P-N Darlington Power Transistors h p E M in. — 10,000 1.33 W att p o w e r d is s ip a tio n at

JFET TRANSISTOR REPLACEMENT GUIDE j201

Abstract: UA6538 DC motor speed control using 555 and ir sensor U2740B-FP UAA145 CQY80 U2840B tcrt9050 TCDF1910 sod80 smd zener diode color band
Contextual Info: Semiconductors Technical Library March 1996 Back Products Overview Communications Automotive Computer Industrial Broadcast Media Aerospace & Defense Communications Applications Telephone ICs Type U3750BM–CP Package 44–pin PLCC Function One chip telephone