BUX11 Search Results

bux11

Contextual Info: BUX11 HIGH CURRENT NPN SILICON TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The BUX11 is a silicon multiepitaxial NPN transistor in Jedec TO-3 metal case, intended for use in switching and linear applications in military and industrial equipment.

BUX11

Contextual Info: fZ 7 ^ SCS-THOMSON 7# M O œ m iO T « ! BUX 11 HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR D E S C R IP T IO N The BUX11 is a silicon muitiepitaxial NPN transis­ tor in Jedec TO-3 metal case, intended for use in switching and linear applications in military and in­

BUX11n

Abstract: G-4041 BUX11
Contextual Info: SGS-THOMSON MûœiLiOT «! BUX11N HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR DESCRIPTION The BUX11 is a silicon multiepitaxial NPN transis­ tor in Jedec TO-3 metal case, intended for use in switching and linear applications in military and in­ dustrial equipment.

BUX11

Abstract: LE17
Contextual Info: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX11 • High Current Capability. • Hermetic TO3 Metal package. • Designed For Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO

Contextual Info: 7 T 2 S237 QQ26^21 M • '3 3 » / 3 SGS-THOMSON B U X 1 1 N S G S-THOMSON 30E D HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR DESC RIPTIO N The BUX11 is a silicon multiepitaxial NPN transis­ tor in Jedec TO-3 metal case, intended for use in switching and linear applications in military and in­

Contextual Info: BUX11 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

Contextual Info: BUX11N Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

BUX11N

Contextual Info: BUX11N Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

BUX11

Contextual Info: SavantIC Semiconductor Product Specification BUX11 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·For use in switching and linear applications PINNING see fig.2 PIN DESCRIPTION

Contextual Info: SGS-THOMSON * t7 BUX11 m HIGH CURRENT NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The BUX11 is a silicon multiepitaxial NPN transistor in Jedec TO-3 metal case, intended for use in switching and linear applications in military and industrial equipment.

BUX11

Contextual Info: NPN BUX11 HIGH CURRENT, HIGH SPEED , HIGH POWER TRANSISTOR The BUX11 is silicon multiepitaxial planar NPN transistors in Jedec TO-3. They are intended for use in switching and linear appications in military and industrial equipments. ABSOLUTE MAXIMUM RATINGS

Contextual Info: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX11 • High Current Capability. • Hermetic TO3 Metal package. • Designed For Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO

BUX11

Contextual Info: BUX11 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

transistor 160v 1.5a npn

Abstract: BUX11 250V transistor npn 2a transistor IC 12A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX11 DESCRIPTION •Low Collector Saturation Voltage·High Switching Speed ·High Current Current Capability APPLICATIONS ·Motor control ·Linear and switching industrial equipment

transistor tl 188

Abstract: 92CS-27516
Contextual Info: BUX11A High-Current, High-Power, High-Speed Silicon N-P-N Power Transistor TERMINAL DESIGNATIONS c £ Features: • I / c eo 1353 File N um ber FLANGE _ -190 V 92CS-27516 m l c - 20 A ■ Pt - 200 W JEDEC TO-204AA POWER TRANSISTORS The RCA-BUX11A epitaxial-base silicon n-p-n transistor

U 1560

Abstract: BUX24-RC BUX51
Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No BUW58 BUW60 BUW61 BUW62 BUW73 BUW74 BUW75 BUW76 BUW77 BUW81 BUW81A BUW89 BUW90 BUW91 BUW92 BUX10 B U X 10C ECC BUX10P BUX11 BUX11 CE C C BUX11N BUX11P BUX12 B U X 12C EC C BUX12P BUX13 BUX13 CE C C

BUX11

Contextual Info: BUX11N Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

BUX11

Contextual Info: SGS-THOMSON B U X 11 RülD@œi[LI BTIs! IS!inCi HIGH C U R R EN T NPN SILICON TRANSISTO R . SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The BUX11 is a silicon multiepitaxial NPN transistor in Jedec TO-3 metal case, intended for use in switching and linear applications in military

Contextual Info: CRIMSON SE MICO ND UC TO R INC TT D eTJI e SIMD^ b 0DQ0337 4 • . 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC 99 D 00 3 3 7 ! D ' ' f ' 3 3 - 0/ ! EPITAXIAL PLANAR - TO -66 NPN PNP BUR10 BUR11 BUR12 BUX77 2N4910 2N4911 2N4912 2 N5427 2N5428

transistor buv18a

Abstract: motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"
Contextual Info: STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR COLLECTOR CONNECTED TO TAB Resistive Switching IcCont Amps Max VcEO sus) Volts Min 0.5 300 MPSU10 0.8 40 MPSU02 1 120 2 Device Type *s US Max tf US Max fT MHz Min P q (Case) Watts hFE Min/Max @ lc Amp MPSU60 30 min

Contextual Info: 4ÔE D 0 1 3 3 1 0 7 GGDD42D 7 b l H S N L B G137 chip family The G 137 chip family is an NPN bipolar multi-epitaxial planar transistor intended for applications requiring fast switching, low saturation power devices. SEMELAB LT]> 'î- 3 5 'O l • UP TO 35 AMPS

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

pmd10K80

Abstract: PMD17K100 MJ-6503 MJ802 EQUIVALENT 2n6545 BDW52 BU208A BUW35 PMD10K40 BDX88
Contextual Info: Power Transistors TO-3 Case TYPE NO. IC PD BVCBO BVCEO hFE V MIN (V) MIN MIN @ IC VCE(SAT) @ IC PNP (A) MAX (W) NPN 2N3055 MJ2955 15 115 100 60 5.0 - 10 10 117 160 140 20 70 3.0 2N3442 (A) MAX (V) MAX fT (A) (MHz) MIN 3.0 10 2.5 5.0 10 - 2N3713 2N3789