HI669A Search Results
HI669A Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
---|---|---|---|---|---|---|---|---|
HI669A | Hi-Sincerity Mocroelectronics | NPN Epitaxial Planar Transistor | Original | 27.98KB | 3 | |||
HI669A | Hi-Sincerity Mocroelectronics | NPN EPITAXIAL PLANAR TRANSISTOR | Original | 26.22KB | 3 |
HI669A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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transistor mark code H1
Abstract: HI669A
|
Original |
HE9004 HI669A HI669A O-251 10sec transistor mark code H1 | |
HI669AContextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9004 Issued Date : 1998.01.25 Revised Date : 2003.07.21 Page No. : 1/3 HI669A NPN EPITAXIAL PLANAR TRANSISTOR Description The HI669A is designed for low frequency power amplifier. Absolute Maximum Ratings Ta=25°C |
Original |
HE9004 HI669A HI669A O-251 | |
HI669AContextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9004 Issued Date : 1998.01.25 Revised Date : 2002.09.16 Page No. : 1/3 HI669A NPN EPITAXIAL PLANAR TRANSISTOR Description The HI669A is designed for low frequency power amplifier. Absolute Maximum Ratings Ta=25°C |
Original |
HE9004 HI669A HI669A O-251 | |
Contextual Info: HI-SINCERITY Spec. No. : HE9004 Issued Date : 1998.01.25 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HI669A NPN EPITAXIAL PLANAR TRANSISTOR Description The HI669A is designed for low frequency power amplifier. TO-251 Absolute Maximum Ratings TA=25°C |
Original |
HE9004 HI669A HI669A O-251 183oC 217oC 260oC | |
XL1225 equivalent
Abstract: 2N3053 equivalent BF422 EQUIVALENT bc238 equivalent 2N6397 equivalent 2N5551 equivalent 2SB772 equivalent BC109 BC184 BC549 2sd880 equivalent BT169 equivalent
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Original |
2N2955 2SA952 2N3055 2SB1426 2N3417 XL1225 equivalent 2N3053 equivalent BF422 EQUIVALENT bc238 equivalent 2N6397 equivalent 2N5551 equivalent 2SB772 equivalent BC109 BC184 BC549 2sd880 equivalent BT169 equivalent |