HIA 51 Search Results

12FL

Abstract: KDE1204PFB2
Contextual Info: SUNON SPECIFICATION FOR APPROVAL CUSTOMER DESCRIPTION DIMENSIONS MODEL P/N APPROVED NO APPROVED BY DC BRUSHLESS FAN 40x40x10 mm KDE1204PFB2 H AUTHORIZED SPECNO DAWN. hia/vui/ 4 4 /S CHKD. V<7 X APPD D401438 ISSUE DATE 11.08.2000 EDITION REVISE DATE ED40231

ha2-2515-5

Abstract: HA2515 HA2-2520-2 HA2-2500-2 HA2-2502-2 HA2-2510-2 HA2500 HA2502 HA2505 HA2510
Contextual Info: ONfilÜSBIL HIA 2500/02/05/10/12/15/20/22/25 High Slew Rate O perational Am plifiers FEATURES GENERAL DESCRIPTION • Slew Rate — Up to 120 V/jis The 2500 series of high slew rate operational amplifiers are monolithic integrated circuits fabricated using dielectric iso­

Contextual Info: 1 2 3 Material: 396BP ^ * Insulator : NYLON 6/6 UL94V-Q V 2 1 4 H 2 3 * Contact. : Brass 1. NO. OF CIRCUITS * Plating : Tin 2. PIN LENGTH OPTIONS: D:DIM.C = 9 .9 5 mm A:DIM.C=12.90mm B:DIM.C=2 2 .0 Dmm hiA U pJ N ÜI LLU T _ A_ hIU iA U T a M jI LLU T P=Em pty circuits and DIM.C=9.95mm

2N341

Abstract: MIL-S-1950U a1u transistor XLO6 2N3413 a1u marking 6 A1u marking transistor c 3206
Contextual Info: M IL -S -19500/31C 1 June 1972 SUPERSEDING M IL -S -1 9 5 0 0 /3 1 B 21 Ja n u ary 1965 MILITARY SPECIFICA TION SEMICONDUCTOR DEVICE. TRANSISTOR, NPN. SILICON, LOW-POWER T Y PE 2N341 T hia sp e c ific a tio n is approved fo r u se by all D e p a rt­ m e n ts and A gencies of th e D e p a rtm e n t of D efen se?-

Contextual Info: A ap — ATT yui Am si L£ 1 W0 1 A £ ’2=*'A 1 »-0 1 l' > 1 sro 1 A 8 '8 = H1A e*o n *o 10 *0 2*0 A 2 1 5 ni A 5 A 0 I 6S L\ osi KI 8 '0 ¡1 a/A u i H*0 H "0 8*0 6*0 2*0 ¿0 *0 2*0 ¿0 *0 ASM I 5 “1A 5 A S *6 A I I 5 HIA 5 A 6 09 8t 19 6* an sei n 8*0

Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MCM54280B MCM5L4280B MCM5V4280B Product Preview 256K x 18 CMOS Dynamic RAM Fast Page Mode - 2 CAS, 1 Write Enable The MCM54280B is a 0.6|i CMOS high-speed dynamic random access memory. It is organized as 262,144 eighteen-bit words and fabricated with CMOS silicon-gate

hy534256s

Abstract: L313A
Contextual Info: HY534256 Series “H Y U N D A I 256KX 4-bit CMOS DRAM DESCRIPTION The HY534256 is the new generation and fast dynamic RAM organized 262,144 x 4-bits. The HY534256 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

z07b

Abstract: tqfp 100 LAND PATTERN
Contextual Info: REV ISIO N S DCN REV DESCRIPTION DATE APPROVED 27370 OD INITIAL RELEASE 11/IB/94- T. VU 01 ADDED TABLE FOR 4 4 -P IN 07/05/00 T. VU OZ CORRECTED P & PI DIMENSIONS 07/05/00 T. VU 03 SWAPPED P ft PI DIMEN 510N5 DB/09/01 EVEN LEAD SIDES ODD LEAD SIDES HD H D'

MSM514266

Contextual Info: O K I semiconductor MSM514266B_ 262,144-WORD x 4-BIT DYNAMIC RAM GENERAL DESCRIPTION The M S M 514266B is a new generation dynamic RAM organized as 262,144 words x 4 bits. The technology used to fabricate the M SM 514266B is O K I’s C M O S silicon gate process technology.

74LV74

Abstract: 74LV74D 74LV74DB 74LV74N 74LV74PW
Contextual Info: Philips Semiconductors Product Specification Dual D-type flip-flop with set and reset; positive-edge trigger FEATURES • • • • • • Optimized for Low Voltage applications: 1.0 to 3.6 V Accepts TTL input levels between Vcc = 2.7 V and Vcc = 3.6 V

SB0015

Abstract: SB0015-03A SB0030-01A BA30
Contextual Info: - - « « B #S8001 5-03A 3 Í É : 30V, 15mA # Ä : g s ß W : 70% S É *® DO-35 »SB00 3 0-0 1A Hí=f ® â : fêSJB (10V. 30mA) # S : ß » W : 70% S É *® DO-35 I W ^ t / M í o Ä ^ SI 18 3 i 59M Vr (V) 30 lo(iA ) 15 100 Ti CC) 3 H I r ( juA)

MCM511001-85

Abstract: MCM511001-12 MCM511001
Contextual Info: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MCM511001 Advance Information P PACKAGE PLASTIC C A SE 707A 1M x 1 CM O S Dynamic RAM The MCM511001 is a 1.2/i CM O S high-speed, dynamic random access memory. It is organized as 1,048,576 one-bit words and fabricated with C M O S silicon-gate process

A1HV

Abstract: OQ11 SLTC
Contextual Info: “H Y U N D A I 11 • M 11 W I I I H Y 5 1 1 8 2 6 0 J 5e r i e s 4 1 1 w n e us« n « A O o ä i i » .u w or* a o o M in o 1M X 16-bit CMOS nDRAM with 2CAS &WPB DESCRIPTION The HY5118260 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118260

Contextual Info: new product 3/03 - 1308662 Multi-Beam XL - Power Distribution Connector System CONFIGURATIONS The conncctor configuration is described by reading Leftto-Right on the Header and RightHo-Left on the Receptacles. A w ide variety o f configurations can be pro­

LRX 4311

Abstract: 42dh TL258A
Contextual Info: STLC3040 SUBSCRIBER LINE INTERFACE CODEC FILTER, COFISLIC • Single chip CODEC and FILTER including all LOW-VOLTAGE SLIC functions. ■ Advanced 12V BJT, 5V CMOS 0.8um technol­ ogy. ■ Low external component count. ■ Over-sampling A/D and D/A conversion.

0693M

Contextual Info: r=7 SGS-THOMSON * 7 / . RülDœilLiOTWniêi STLC3040 SUBSCRIBER LINE INTERFACE CODEC FILTER, COFISLIC PR ELIM IN ARY DATA • Single chip CODEC and FILTER including all LOW-VOLTAGE SLIC functions. ■ Advanced 12V BJT, 5V CMOS 0.8um technol­ ogy. ■ Low external component count.

LRX 4311

Abstract: 2CR3 TL257A XF MR 60hz trans battery fsc
Contextual Info: STLC3040 SUBSCRIBER LINE INTERFACE CODEC FILTER, COFISLIC PRELIMINARY DATA Single chip CODEC and FILTER including all LOW-VOLTAGE SLIC functions. Advanced 12V BJT, 5V CMOS 0.8um technol­ ogy. Low external com ponent count. Over-sampling A/D and D/A conversion.

PLCC-44 cr16

Abstract: AcDC Convertor D95TL205D L3000N L3000S PLCC44 SEL24 STLC3040 STLC3040-TR STLC3170
Contextual Info: STLC3040 SUBSCRIBER LINE INTERFACE CODEC FILTER, COFISLIC January 1999 PLCC44 ORDERING NUMBERS: STLC3040 STLC3040-TR SEL24 TS2 TS1 TS0 STR3 DGND VDD FSC DCL DD DU Figure 1: Pin Connection Top view 6 5 4 3 2 1 44 43 42 41 40 IO1 7 39 O1 IO2 8 38 I1 C1

Contextual Info: STLC3040 SUBSCRIBER LINE INTERFACE CODEC FILTER, COFISLIC PR ELIM IN ARY DATA • Single chip CODEC and FILTER including all LOW-VOLTAGE SLIC functions. ■ Advanced 12V BJT, 5V CMOS 0.8um technol­ ogy. ■ Low external component count. ■ Over-sampling A/D and D/A conversion.

PLCC-44 cr16

Abstract: TDD 1605 D96TL265A AcDC Convertor STLC3170 D95TL205D L3000N L3000S PLCC44 SEL24
Contextual Info: STLC3040  SUBSCRIBER LINE INTERFACE CODEC FILTER, COFISLIC PRELIMINARY DATA November 1998 PLCC44 ORDERING NUMBERS: STLC3040 STLC3040-TR SEL24 TS2 TS1 STR3 TS0 DGND VDD FSC DCL DD DU Figure 1: Pin Connection Top view 6 5 4 3 2 1 44 43 42 41 40 IO1 7 39

Contextual Info: Technische Information / technical information FB20R06YE3_B1 IGBT-Module IGBT-modules IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values #$ $ % & & & $ : % ? $ . @ ? & #$ $ $ & % ' * +,-

FP15R06YE3

Contextual Info: Technische Information / technical information FP15R06YE3_B4 IGBT-Module IGBT-modules IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values $% % & ' * + ' ' % : & ? % . @ ? ' $% % % ' & ,-

NC76

Abstract: FP15R06YE3 T3423
Contextual Info: Technische Information / technical information FP15R06YE3 IGBT-Module IGBT-modules IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values $% % & ' * + ' ' % : & ? % . @ ? ' $% % % ' & ,- ./01

NJM2146B

Abstract: NJM2146BD NJM2146BM NJM2146BR
Contextual Info: g j R C NJM2146B l ÌlE S m S S flJ ÌÉ P ffllC N JM 2146Blim *;S1gA*T|-7-b'> hBE MAX. 2mV , i & W i ± W i S ^ J t S ^ « E ( V REF=1.5V± i.o % )$ i* ]ia L f= g iE s m i jiiP fflic ^ -r0 7ÌCi:l-SjM T'^"o NJM2146BD N JM 2146B £ffiffl-f 5 d t i z & y