HIA TRANSISTOR Search Results

BF422

Abstract: transistor bf422 BF420 BF421 BF423
Contextual Info: AMER PHILIPS/D ISCR ETE bSE D • bbSBTBl DDS7bB4 bSb HIA PX D T 4 ¿ U A BF422 SILICON EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelope primarily intended forclass-B video output stages in colour television and professional monitor equipment. P-N-P complements are BF421 and BF423.

2N341

Abstract: MIL-S-1950U a1u transistor XLO6 2N3413 a1u marking 6 A1u marking transistor c 3206
Contextual Info: M IL -S -19500/31C 1 June 1972 SUPERSEDING M IL -S -1 9 5 0 0 /3 1 B 21 Ja n u ary 1965 MILITARY SPECIFICA TION SEMICONDUCTOR DEVICE. TRANSISTOR, NPN. SILICON, LOW-POWER T Y PE 2N341 T hia sp e c ific a tio n is approved fo r u se by all D e p a rt­ m e n ts and A gencies of th e D e p a rtm e n t of D efen se?-

2N5770

Abstract: T0-92A T092A
Contextual Info: 2N5770 NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5770 is NPN silicon planar epitaxial transistor designed for small signal high frequency amplifiers and oscillators. I CASE T0-92A EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltiage

Contextual Info: T O -92 5YM5EMI SEM ICO N DU CTO R BC368, -25 Plastic Encapsulate Transistors TRANSISTOR NPN 1U /— 1 \ luopl 9Z FEATURE Power dissipation PCM : 1. EMITTER 0.625 W (Tamb=25 °C) 2. COLLECTOR Collector current IC M I A 1 3. BASE Collector base voltage

Contextual Info: INI J 3-TERMINAL POSITIVE VOLTAGE GENERAL DESCRIPTION The NJU7202 series is a 100mA Output 3-terninaI positive voltage regulator which contains internal accurate voltage reference, error amplifier, control transistor outputvoltage setting resistor and shotdown prevention circuit.

TRANSISTOR 1017

Abstract: SAB 1018 P BFQ166
Contextual Info: ^5 3* 1 3 1 DO eS lD Û b4T H A P X Philips Sem iconductors Product specification NPN 1 GHz video transistor BFQ166 N AMER P H I L I P S / D I S C R E T E FEATURES b?E ]>' PINNING • Low output capacitance • High gain bandwidth product PIN 1 DESCRIPTION

BS208

Abstract: MB8075
Contextual Info: Philips Components Data sheet status Product specification date of issue February 1991 BS208 P-channel enhancement mode vertical D-MOS transistor PIN CONFIGURATION FEATURES • Direct interface to C-MOS • High-speed switching • No secondary breakdown.

7200L50

Abstract: NJU7200 7200L15 7200l30
Contextual Info: NJU7200 Series P R E L I M I NARY C-MOS 3-TER M INAL POSITIVE • GENERAL DESCRIPTION The NJU7200 series is a low drop out and C-MOS 3terminal positive voltage regulator which contains int­ ernal accurate voltage reference, error amplifier, control transistor and output voltage setting resistor.

2n5549

Contextual Info: TYPE 2N5549 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR B U L L E T I N N O . D L -S 7 0 1 1 1 2 4 , J U N E 1 9 7 0 FOR LOW-LEVEL CHOPPERS, LOGIC SWITCHES, MULTIPLEXERS, AND RF AND VHF AMPLIFIERS • High lyfsl/Ciss Ratio High-Frequency Figure-of-Merit

PW-201

Abstract: a1641 2044B 2SA1641 t313a 29261
Contextual Info: Ordering number: EN 2926A N°-2926A a _ _ _ _ _ _ _ 2 S A 164 1 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Features Adoption of FBET, MBIT processes. Low saturation voltage. F ast switching speed. Large current capacity. Small and slim package making it easy to make 2SA1641-used set smaller

Contextual Info: SIEMENS NPN Silicon Switching Transistor SXT 3904 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 3904 1A Q68000-A8396 B SOT-89 C E Maximum Ratings

B0543C

Contextual Info: BD543, BD543A, BD543B, BD543C NPN SILICON POWER TRANSISTORS Copyright 1997, Power innovations Limited, UK • Designed for Complementary Use with the BD544 Series • 70 W at 25°C Case Temperature • 8 A Continuous Collector Current • 10 A Peak Collector Current

TLP120-4

Abstract: E67349 TLP120 11-4c1 detector diode
Contextual Info: GaAs IRED a PHOTO-TRANSISTOR T L P 1 2 , - 4 TLP120 U nit in mm PROGRAM MABLE CONTROLLERS TLP120 A C /D C -IN P U T M ODULE 6 Weight : 0.{ 4 TELECOM M UNICATION The TOSHIBA MINI FLAT COUPLER TLP120 and TLP120-4 is a small outline coupler, suitable for surface m ount assembly.

Contextual Info: N AUER PHILIPS/DISCRETE b^E D • b b S S ^ l 0Q3D7^S ^flT W A P X Philips Semiconductors Product Specification PowerMOS transistor BUK553-100A/B Logic level FET_ _ _ GENERAL DESCRIPTION N-channel enhancement mode

BUK437-500B

Contextual Info: AMER PH IL IPS /DIS CRET E bTE T> • b b S 3 R 31 OOBDMôS Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK565-60A Logic level GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface

bc 103 transistor

Abstract: bc 106 transistor transistor BC 549 transistor bc 103 bc 104 npn transistor transistor bc 102 transistor c 548 of bc 547 b transistor bc 546 transistor Bc 580
Contextual Info: HN / BC 546.549 NPN Silicon Expitaxial Planar Transistor These transistors are subdivided into three groups A, B and C according to their current gain. The type BC546 is available in groups A and B, however, the types BC547 and BC548 can be supplied in all three groups. The BC549

APT45G100BN

Contextual Info: ADVANCED POIdER T E C H N O L O G Y bl E □ 2 5 7 ^ 0*1 OOOOfl'i'ï flb? D A d van ced po w er Tec h n o lo g y * APT45G100BN 1000V 45A POWER MOS IV IGBT N -C H A N N EL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS

Contextual Info: Philips Com ponents Data sheet status Preliminary specification date of issue March 1991 BUK474-400B PowerMOS transistor PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

BUK437-500B

Abstract: J812 DD304 HIA TRANSISTOR
Contextual Info: N Afl ER PHILIPS/DISCRETE bTE T> m bbS3R31 □Q3DM6S Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

I138

Abstract: 2SA512 2SC512 23A513
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

Contextual Info: Philips Semiconductors Product specification PowerMOS transistors PHX3N40E Avalanche energy rated_ FEATURES • • • • • SYMBOL QUICK REFERENCE DATA Repetitive Avalanche Rated Fast switching Stable off-state characteristics

LP2S

Abstract: BUK545-50A 40608G
Contextual Info: - r - 3 Philips Components Data sheet status Preliminary specification date of issue March 1991 Replaces BUK545-50A/B BUK575-60A/B PowerMOS transistor Logic level FET SbE » PH IL IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode

transistor tt 2222

Abstract: C7f TRANSISTOR BLY92C BLY92C/01 BLY92
Contextual Info: Philips Semiconductors b b S 3 T 3 1 Q 0 2 tì 7 4 0 CHT • A P X ^ u c ^ p e c m c a tfó n BLY92C/01 VHF power transistor N AUER PHILIPS/DISCRETE b*lE » PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,