HIGH GAIN LOW VOLTAGE PNP TRANSISTOR Search Results

germanium Power Transistor

Abstract: pnp germanium transistor germanium transistor pnp NTE27 GERMANIUM TRANSISTOR Germanium power
Contextual Info: NTE27 Germanium PNP Transistor High Current, High Gain Amp Description: The NTE27 is a PNP germanium power transistor designed for high current applications requiring high-gain and low saturation voltages. Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V

Contextual Info: PNP small signal transistor BCX17 Small load switch transistor with high gain and Low saturation voltage. Features 1 High gain and low saturation voltage. (2) Ideal for small load switching applications. Complements the BCX19 Dimensions (Unit : mm)

BCX17

Abstract: BCX19 T116
Contextual Info: BCX17 Transistors PNP small signal transistor BCX17 Small load switch transistor with high gain and Low saturation voltage. zFeatures 1 High gain and low saturation voltage. 2) Ideal for small load switching applications. 3) Complements the BCX19. zDimensions Unit : mm)

MJE210

Abstract: transistor case To 106 transistor C 834
Contextual Info: MJE210 SILICON PNP TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain aydio amplifier applications.

Contextual Info: SGS-THOMSON iMm@ignnCTisi«ii Sg¡ MJE210 SILICON PNP TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon epitaxial-base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain

Contextual Info: UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. FEATURE *Collector-Emitter Sustaining Voltage VCEO sus =25V (Min) @ IC =10mA

Contextual Info: UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. FEATURE *Collector-Emitter Sustaining Voltage VCEO sus =25V (Min) @ IC =10mA

germanium Power Transistor

Abstract: Vcb-60V NTE27 Germanium power
Contextual Info: NTE27 Germanium PNP Transistor High Current, High Gain Amp Description: The NTE27 is a PNP germanium power transistor designed for high current applications requiring high–gain and low saturation voltages. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V

2STF2220

Abstract: JESD97 P025H STMicroelectronics marking code date sot-89
Contextual Info: 2STF2220 High Gain Low Voltage PNP Power Transistor General features • Very low Collector to Emitter saturation voltage ■ D.C. Current gain, hFE >100 ■ 1.5 A continuous collector current ■ In compliance with the 2002/93/EC European Directive Description

2STX2220

Abstract: JESD97 X2220
Contextual Info: 2STX2220 High Gain Low Voltage PNP Power Transistor General features • Very low Collector to Emitter saturation voltage ■ D.C. Current gain, hFE >100 ■ 1.5 A continuous collector current ■ In compliance with the 2002/93/EC European Directive Description

MAT03 op

Abstract: cascode miller capacitance low noise Microphone Preamplifier
Contextual Info: a FEATURES Dual Matched PNP Transistor Low Offset Voltage: 100 ␮V max Low Noise: 1 nV/√Hz @ 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 MHz typ Tight Gain Matching: 3% max Excellent Logarithmic Conformance: rBE Ӎ 0.3 ⍀ typ Available in Die Form

MJD210

Abstract: MJD210L-TN3-R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJD210 PNP SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS „ 1 DESCRIPTION TO-252 The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. „ FEATURE 1 *Collector-Emitter Sustaining Voltage

PART NUMBER OF PNP 2A DPAK

Contextual Info: UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. 1 FEATURE * Collector-Emitter Sustaining Voltage VCEO sus =25V (Min) @ IC =10mA

D45H1A

Abstract: 1462, TRANSISTOR
Contextual Info: ¿Z&MOSPEC PNP SILICON POWER TRANSISTORS PNP D45H1A D45H1A transistor is designed for use in low voltage and low drop-out regulator switching circuits application FEATURES: * Collector-Emitter Voltage v c e o = 15V Min * High Current Power Transistors * DC Current Gain

818B

Abstract: ON TSOP6 MARKING 6L PNP POWER TRANSISTOR SOT23-6L STT818B
Contextual Info: STT818B HIGH GAIN LOW VOLTAGE PNP POWER TRANSISTOR • ■ ■ ■ Type Marking STT818B 818B VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE DC CURRENT GAIN > 100 hFE 3 A CONTINUOUS COLLECTOR CURRENT (IC) SURFACE-MOUNTING SOT23-6L PACKAGE IN TAPE & REEL

818B

Abstract: PNP POWER TRANSISTOR SOT23-6L high gain PNP POWER TRANSISTOR SOT23 STT818B PNP POWER TRANSISTOR "SOT23-6L" MARKING 818B SOT23 818B
Contextual Info: STT818B HIGH GAIN LOW VOLTAGE PNP POWER TRANSISTOR • ■ ■ ■ Type Marking STT818B 818B VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE DC CURRENT GAIN > 100 hFE 3 A CONTINUOUS COLLECTOR CURRENT (IC) SURFACE-MOUNTING SOT23-6L PACKAGE IN TAPE & REEL

818A

Abstract: STT818A
Contextual Info: STT818A  HIGH GAIN LOW VOLTAGE PNP POWER TRANSISTOR • ■ ■ ■ VERY LOW SATURATION VOLTAGE DC CURRENT GAIN > 100 hFE 3 A CONTINUOUS COLLECTOR CURRENT (IC ) SURFACE-MOUNTING SOT23-6L PACKAGE IN TAPE & REEL APPLICATIONS ■ POWER MANAGEMENT IN PORTABLE

ST MARKING 818b

Abstract: marking code 10 sot23 818B JESD97 STT818B MARKING 818B
Contextual Info: STT818B High gain low voltage PNP power transistor Features • Very low collector to emitter saturation voltage ■ DC current gain > 100 hFE ■ 3 A continuous collector current (IC) Applications ■ Power management in portable equipments ■ Switching regulator in battery charger

ibm rev.1.5

Abstract: 2STF2280 STMicroelectronics marking code date sot-89
Contextual Info: 2STF2280 Low voltage high performance PNP power transistor Preliminary data Features • Low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed 4 3 2 1 Applications ■ DC-DC converter, voltage regulation ■

Contextual Info: UTC TIP110A PNP EXPITAXIAL PLANAR TRANSISTOR LOW SATURATION VOLTAGE PNP DARLINGTON TRANSISTOR DESCRIPTION The UTC TIP110A is designed for using in general purpose amplifier and switching applications. FEATURE 1 *Low VCE sat *High current gain TO-220 1:BASE

Contextual Info: TIP142T TIP147T COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . STM PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . MONOLITHIC DARLINGTON CONFIGURATION . LOW VOLTAGE . HIGH CURRENT . HIGH GAIN APPLICATIONS . GENERAL PURPOSE SWITCHING DESCRIPTION

2N6438

Abstract: 2N6338 2N6340 2N6436 2N6437
Contextual Info: ¿2&MOSPEC HIGH-POWER PNP SILICON TRANSISTORS . designed for use in industrial power amplifiers and switching circuit applications. PNP 2N6436 2N6437 2N6438 FEATURES: * High DC Current Gain hFE=20-80 @ lc =10A =12 Min @lc=25A * Low Collector-Emitter Saturation Voltage

FZT792A

Abstract: FZT692B DSA003717
Contextual Info: SOT223 PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR FZT792A ISSUE 3 - NOVEMBER 1995 FEATURES * High gain and Very low saturation voltage C APPLICATIONS * Battery powered circuits COMPLEMENTARY TYPE PARTMARKING DETAIL - E C FZT692B FZT792A B ABSOLUTE MAXIMUM RATINGS

2N2907 equivalent

Contextual Info: 20 STERN AVE SPRINGFIELD. NEW JERSEY 07081 TELEPHONE: 973 378-2932 2N2907 PNP SILICON PLANEX TRANSISTOR 2N2907 is a silicon PNP PLANEX* transistor designed primarily for saturated switching, D.C. amplifier and VHF-UHF communication applications. It features low saturation voltage, wide gain linearity, and high current gain bandwidth product.