NTE27 Search Results

TO202N

Abstract: NTE272 NTE273 ic 555 audio amplifiers
Contextual Info: NTE272 NPN & NTE273 (PNP) Silicon Darlington Complementary Power Amplifiers Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications.

Complementary Darlington Audio Power Amplifier

Abstract: PNP Monolithic Transistor Pair ic 555 audio amplifiers npn darlington transistor 150 watts darlington complementary power amplifier NTE272 NTE273 application note ic 555
Contextual Info: NTE272 NPN & NTE273 (PNP) Silicon Darlington Complementary Power Amplifiers Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications.

Contextual Info: NTE272 NPN & NTE273 (PNP) Silicon Darlington Complementary Power Amplifiers Description: The NTE272 (NPN) and NTE273 (PNP) are silicon complementary Power Amplifiers in a TO202 type case designed for use in complementary amplifiers and driver applications.

NTE27C64-15D

Abstract: nte27c64
Contextual Info: NTE27C64−15D Integrated Circuit 64 Kbit 8Kb x 8 UV EPROM Description: The NTE27C64−15D is a 64Kbit UV EPROM in a 28−Lead DIP type package ideally suited for microprocessor systems requiring large programs and is organized as 8,192 by 8 bits. This device has a

NTE27C256-70D

Abstract: NTE27C256-15D NTE27C256-12D
Contextual Info: NTE27C256−12D, NTE27C256−15D, NTE27C256−15P, NTE27C256−70D Integrated Circuit 256 Kbit 32Kb x 8 EPROM Description: The NTE27C256 is a 256Kbit EPROM in a 28−Lead DIP type package ideally suited for microprocessor systems requiring large programs and is organized as 32,768 by 8 bits. The NTE27C256−12D,

NTE2708

Abstract: 1702 eprom 1702 eprom programmer 74LS
Contextual Info: NTE2708 Integrated Circuit NMOS, 8K UV EPROM, 450ns Description: The NTE2708 is an ultra–violet light–erasable, electrically programmable read only memory. It has 8, 192 bits organized as 1024 words of 8–bit length. This device is fabricated using N–channel silicon–

Contextual Info: NTE272 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)40 V(BR)CBO (V) I(C) Max. (A)2 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.25G h(FE) Max. Current gain.

Contextual Info: NTE271 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)125 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1G h(FE) Max. Current gain.

Contextual Info: NTE27C256−12D, NTE27C256−15D, NTE27C256−15P, NTE27C256−70D Integrated Circuit 256 Kbit 32Kb x 8 EPROM Description: The NTE27C256 is a 256Kbit EPROM in a 28−Lead DIP type package ideally suited for microprocessor systems requiring large programs and is organized as 32,768 by 8 bits. The NTE27C256−12D,

NTE2732A

Abstract: NTE3880 Nte388
Contextual Info: NTE2732A Integrated Circuit 32K 4K x 8 NMOS UV Erasable PROM Description: The NTE2732A is a 32,768–bits ultraviolet erasable and electrically programmable read–only memory (EPROM) organized as 4,096 words by 8 bits and manufactured using N–Channel Si–Gate

NTE2716

Contextual Info: NTE2716 Integrated Circuit NMOS, 16K UV Erasable PROM Description: The NTE2716 is a 16,384–bit 2048 x 8–bit Erasable and Electrically Reprogrammable PROM in a 24–Lead DIP type package designed for system debug usage and similar applications requiring nonvolatile memory that could be reprogrammed periodically. The transparent lid on the package allows

NTE270

Contextual Info: NTE270 NPN & NTE271 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications.

nte278

Contextual Info: NTE278 Silicon NPN Transistor Broadband RF Amp Description: The NTE278 is a silicon NPN transistor in a TO39 type package designed specifically for broadband applications requiring good linearity. Usable as a high frequency current mode switch to 200mA. Features:

nte280

Abstract: nte291
Contextual Info: BI-POL AR TRANSISTORS NTE Type Number Polarity and Material Description and Application 275 PNP-Si 278 NPN-Si 280 NPN-Si 280MP NPN-Si PNP-Si Darlington Pwr Amp Switch Compl to NTE274 Broad Band RF Amp, CATV/MATV Amp Audio Amp Output (Compl to NTE281) Matched Pair of NTE280

NTE2764

Contextual Info: NTE2764 Integrated Circuit NMOS, 64K Erasable EPROM, 200ns Description: The NTE2764 is a 65,536–bit 8192 X 8 bit Ultraviolet Erasable and Electrically Programmable Read–Only Memory (EPROM) in a 28–Lead DIP type package which operates from a single +5V supply, making it ideal for microprocessor applications. It features an output enable control and offers

NTE2716

Contextual Info: NTE2716 Integrated Circuit NMOS, 16K UV Erasable PROM Description: The NTE2716 is a 16,384–bit 2048 x 8–bit Erasable and Electrically Reprogrammable PROM in a 24–Lead DIP type package designed for system debug usage and similar applications requiring nonvolatile memory that could be reprogrammed periodically. The transparent lid on the package allows

Contextual Info: NTE27 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)60 I(C) Max. (A) Absolute Max. Power Diss. (W)170 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

Contextual Info: NTE270 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)125 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1G h(FE) Max. Current gain.

Contextual Info: NTE275 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)80 V(BR)CBO (V) I(C) Max. (A)4 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.3GÂ h(FE) Max. Current gain.

germanium Power Transistor

Abstract: Vcb-60V NTE27 Germanium power
Contextual Info: NTE27 Germanium PNP Transistor High Current, High Gain Amp Description: The NTE27 is a PNP germanium power transistor designed for high current applications requiring high–gain and low saturation voltages. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V

nte278

Contextual Info: NTE278 Silicon NPN Transistor Broadband RF Amp Description: The NTE278 is a silicon NPN transistor in a TO39 type package designed specifically for broadband applications requiring good linearity. Usable as a high frequency current mode switch to 200mA. Features:

NTE2764

Contextual Info: NTE2764 Integrated Circuit NMOS, 64K Erasable EPROM, 200ns Description: The NTE2764 is a 65,536–bit 8192 X 8 bit Ultraviolet Erasable and Electrically Programmable Read–Only Memory (EPROM) in a 28–Lead DIP type package which operates from a single +5V supply, making it ideal for microprocessor applications. It features an output enable control and offers

germanium Power Transistor

Abstract: pnp germanium transistor germanium transistor pnp NTE27 GERMANIUM TRANSISTOR Germanium power
Contextual Info: NTE27 Germanium PNP Transistor High Current, High Gain Amp Description: The NTE27 is a PNP germanium power transistor designed for high current applications requiring high-gain and low saturation voltages. Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V

Contextual Info: NTE276 Thyristors Gate Turn Off Thyristor GTO V(DRM) Max. (V)1.2k V(RRM) Max. (V) I(T) Rated Maximum (A)5.0² @Temp. (øC) (Test Condition) I(TSM) Max. (A)80 @ t(w) (s) (Test Condition) I(GT) Max. (A)120m V(GT) Max.(V)1.5 I(H) Max. (A) Holding Current300mÂ