HIGH POWER DIODE AXIAL GAAS Search Results

Contextual Info: TSML1000, TSML1020, TSML1030, TSML1040 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES TSML1020 TSML1000 • Package type: surface mount • Package form: GW, RGW, yoke, axial • Dimensions L x W x H in mm : 2.5 x 2 x 2.7

smd diode GW

Abstract: TSML1020 DATA SHEET high power infrared led TEMT1000 TSML1000 TSML1020 TSML1030 TSML1040 GaAs 1000 nm Infrared Diode,
Contextual Info: TSML1000, TSML1020, TSML1030, TSML1040 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES TSML1000 TSML1020 • Package type: surface mount • Package form: GW, RGW, yoke, axial • Dimensions L x W x H in mm : 2.5 x 2 x 2.7

Contextual Info: TSML1000, TSML1020, TSML1030, TSML1040 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES TSML1020 TSML1000 • Package type: surface mount • Package form: GW, RGW, yoke, axial • Dimensions L x W x H in mm : 2.5 x 2 x 2.7

Contextual Info: TSML1000, TSML1020, TSML1030, TSML1040 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES TSML1020 TSML1000 • Package type: surface mount • Package form: GW, RGW, yoke, axial • Dimensions L x W x H in mm : 2.5 x 2 x 2.7

smd diode GW

Contextual Info: TSML1000, TSML1020, TSML1030, TSML1040 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES TSML1000 TSML1020 • Package type: surface mount • Package form: GW, RGW, yoke, axial • Dimensions L x W x H in mm : 2.5 x 2 x 2.7

SE135N

Abstract: SE110N UX-C2B SE140N STR83159 SE130N STR2012 Transistor AC 51 SE140 SE115N
Contextual Info: Type No. Type Type No. Type Index Type No. Order 57 Index (Type No. Order) Type No. Type 2SA1186 2SA1215 Transistors for Audio Amplifier (LAPT) 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488 2SA1492 2SA1493 2SA1494 2SA1567 2SA1568 2SA1667 2SA1668

SE110N

Abstract: A4032 SE130N SE005N SE090N high hfe transistor FMQG5FM SLA7022M SE012 3gu diode
Contextual Info: Index Type No. Order Type No. Type Type No. 2SA1186 Type 16 2SC3830 16 2SC3831 16 2SC3832 19 2SC3833 2SA1294 1R 2SC3834 2SA1295 16 2SC3835 16 2SC3851 General Purpose Transistor 19 16 2SC3852 Low VcE(sat)-High hFE Transistor 18 19 2SC3856 16 2SC3857 Transistors for Audio Am plifier (Single Emitter)

em 234 stepper

Abstract: 2SC5586 equivalent 8002 1018 AUDIO amplifier 2SC5586 2SC5487 voltage doubler bridge varistor 560-2 2sa2003 se125n SE090
Contextual Info: Bulletin No O01ED0 Jun.,2001 SEMICONDUCTORS SHORT FORM CATALOG ICs TRANSISTORS THYRISTORS DIODES LIGHT EMITTING DIODES CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility

2SC5586 equivalent

Abstract: 2sc5586 2sa1694 equivalent 2SC5487 transistor 2SC5586 STR83159 em 234 stepper SE090 SK 5154S 2SK3460 equivalent
Contextual Info: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements

SK 18752

Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Contextual Info: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,

L0242

Contextual Info: SIEMENS LD242 GaAs INFRARED EMITTER Maximum Ratings FEATURES * GaAs Infrared Emitting Diode, Fabricated in a Liquid Phase Epitaxy Process * Emits Radiation In Near Infrared Range * Cathode Electrically Connected to Case Operating and Storage Temperature Range T0P, Tstg . -40° to +80°C

triac zd 607

Abstract: transistor C5586 bridge rectifier sanken rb40 rb40 bridge rectifier rb60 bridge rectifier ZD 607 - triac CTPG2F CTX12S Toshiba transistor c4468 STA524A
Contextual Info: Warning ● The contents in this document are subject to changes, for improvement and other purposes, without notice. Make sure that this is the latest version of the document before use. ● The operation and circuit examples in this document are provided for reference purposes

pin diode gamma detector

Abstract: Tuning Varactors UHF schottky diode GaAs p-i-n diodes RF limiter PIN diode impatt diode IMPATT 10 GHz gunn diode 6 GHz PIN diode Microwave zero bias detector diodes
Contextual Info: TABLE OF CONTENTS SURFACE MOUNT PRODUCTS PIN DIODES IN SMQ SQUARE SURFACE MOUNT DIVERSITY SWITCHES DC-2 GHz HIGH POWER (4 PACKAGES . 6

J920

Abstract: BP103
Contextual Info: SIEMENS LD242 GaAs INFRARED EMITTER Maximum Ratings FEATURES • GaAs Infrarad Emitting Diode, Fabricated In a Liquid Phase Epitaxy Emits Radiation in Near Infrared Range Cathode Electrically Connected to Case High Efficiency High Reliability Long Lifetime

MN638S

Abstract: STA464C sk 3001s relay Re 04501 spf0001 sta509a Schottky Diode 80V 6A 2SD2633 sk 5151s SLA2403M
Contextual Info: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein

Contextual Info: bOE » • 023Sbü5 DGHbSTH ibi « S I E G ,i SIEMENS AKTIENGESELLSCHAF SIEMENS LD242 GaAs INFRARED EMITTER Package Dimensions in Inches mm 571 (14.51 492(12 5) ,141 (3 6) 118(3 0) “ F 0 1 6 9 (4 3) . 0 161(4.1) 0100 (2 54) f 0 018(045) -106 (2 7) Chip Location

BPX63

Abstract: ld242
Contextual Info: SIEMENS LD242 GaAs INFRARED EMITTER Package Dimensions in Inches mm 186 (4 .7 5 ) 141 (3 .6 ^ .671 ( 1 4 .5 ) 4 9 2 (1 2 5 ) 118 (3 .0 ) r 0 1 6 9 (4 .3 ) 0.100 (2 .5 4 ) _ 0 .1 6 1 (4 . 1) / f r i -5 0 .0 1 8 ( 0 4 5 ) |\ Anode .2 1 6 (6 .5 ) 106 <2 .7 )

Contextual Info: LD242 SIEMENS GaAs INFRARED EMITTER Package Dimensions in Inches mm 185(4 75), 141 (3 6^ 118 (3 0) 571 (14 5) 492(12 5) * max * r 0100 (2 54) -p V — 0 169(43) . 0161(4.1) i f e \ t Anode 0.018(0 45) 106(2 7) Chip Location 216(5 5) 204 (5 2) Maximum Ratings

Contextual Info: LD242 SIEMENS GaAs Infrared Emitter Dimensions in inches mm .141 (3.6) .571i (14.5)_ ( _ .492r o( í ? ) 0.100 (2.54) Áíiode 0 .018 (0.45) 106(2.7) GET06625 Crap Location FEATURES • GaAs infrared emitting diode, fabricated In a liquid phase epitaxy process

CE109

Contextual Info: OSE-2W4 INFRARED EMITTING DIODE The OSR-2W4 is a axial lead type infrared emitting diode is made with GaAlAs/GaAs substrate LED die. DIMENSIONS Unit: m/m .Ui01. FEATURES • High Luminous intensity 2 A5±0.1 WATER CLEAR 7 /TIN P LA T IN G TIN PLA T IN G \

MEXICO LF 2A 250V 313 FUSE

Abstract: MEXICO LF 1A 250V 313 FUSE MEXICO LF 15A 250V 326 FUSE MEXICO LF 20A 250V 326 FUSE MEXICO LF 5A 250V 314 FUSE mosfet 5kw high power rf MEXICO LF 20A 250V 314 FUSE MEXICO LF 5A 250V 314 FUSE slo blo MEXICO LF 2A 250V 312 FUSE equivalent circuit of power transformer 11kv
Contextual Info: Circuit Protection Specialists World Headquarters Littelfuse, Inc. 800 E. Northwest Highway Des Plaines, IL 60016, USA www.littelfuse.com International Sales, Distribution and Engineering Facilities: North America • Des Plaines, Illinois USA Technical Assistance and

GaAs 850 nm Infrared Emitting Diode

Contextual Info: SFH 405 SIEMENS INFRARED EMITTER FEATURES Maximum Ratings • GaAs Infrared Emitting Diode, Fabricated in a Liquid Phase Epitaxy Process Operating and Storage Temperature Range T0 p. Ts tg . -40° Junction Temperature (Tj) Reverse Voltage (VR) .

HVR-1X 7 diode

Abstract: STR80145 SE135N hvr 1X 3 diode semiconductor STR 20005 sk a 3120c SE110N ux-c2b equivalent transistor CS 9012 PNP STR83159
Contextual Info: Bulletin No O01EC0 JAN.,1998 SEMICONDUCTORS SHORT FORM CATALOG Power ICs Power Transistors PowerMOSFETs Tryristors Diodes Light Emitting Diodes CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility

SFH4057

Contextual Info: SFH 405 SIEMENS INFRARED EMITTER FEATURES Maximum Ratings * GaAs Infrared Emitting Diode, Fabricated in a Liquid Phase Epitaxy Process * Long Lifetime Operating and Storage Temperature Range Tqp, Tstq .-40° to +80°C Junction Temperature ( T j) .80°C