HIGH POWER MICROWAVE DEVICE Search Results

high power fet amplifier schematic

Abstract: GaAs MESFET amplifier fet amplifier schematic x-band mmic core chip MMIC X-band amplifier x-band microwave fet HPA Ku x-band core chip "high power microwave" fet small signal
Contextual Info: Application of Loadline Simulation to Microwave High Power Amplifiers Edward L. Griffin Abstract Loadline theory is described as applied to high power microwave amplifiers. An example design with simulation is presented. Introduction The design of microwave GaAs high power amplifiers HPAs to demanding

DH80154

Abstract: DH80080 DH80106 DH80051 DH80055 dh80102 BH200 DH80100 DH80120 SH93103
Contextual Info: SILICON PIN DIODES High voltage PIN diodes MICROWAVE HIGH VOLTAGE PIN DIODES Applications Characteristics These devices are most often used to control Radio Frequency RF and microwave signals. Typically, high-voltage PIN diodes are found in high power switches and phase shifters.

TMD0708-2

Contextual Info: MICROWAVE POWER MMIC AMPLIFIER TMD0708-2 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=33.0dBm at 7.1GHz to 8.5GHz HIGH GAIN G1dB=22.0dB at 7.1GHz to 8.5GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS

TMD5872-2

Contextual Info: MICROWAVE POWER MMIC AMPLIFIER TMD5872-2 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=34.0dBm at 5.8GHz to 7.2GHz HIGH GAIN G1dB=29.0dB at 5.8GHz to 7.2GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS

TMD0507-2A

Contextual Info: MICROWAVE POWER MMIC AMPLIFIER TMD0507-2A MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=33.0dBm at 5.1GHz to 7.2GHz HIGH GAIN G1dB=22.0dB at 5.1GHz to 7.2GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS

TMD0305-2

Contextual Info: MICROWAVE POWER MMIC AMPLIFIER TMD0305-2 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=33.0dBm at 3.4GHz to 5.1GHz HIGH GAIN G1dB=22.0dB at 3.4GHz to 5.1GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS

CHA5093TCF/24

Abstract: RO4003 CHA5093TCF AN0005 Rogers RO4003 substrate
Contextual Info: CHA5093TCF 24-26GHz High Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The packaged monolithic microwave IC MMIC is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications,

LD79A02K

Abstract: NEC RF Switch 1998 NEC RF Switch
Contextual Info: DATA S H E E T MICROWAVE POWER MODULE FOR COMMUNICATIONS LD79A02K 30 GHz, 20 W CW, LIGHT WEIGHT, COMPACT, EFFICIENT GENERAL DESCRIPTION MPM stands for Microwave Power Module and is the solution introduced by NEC for a microwave power source with high efficiency and the most compact size.

AN0005

Abstract: CHA5093 CHA5093TCF
Contextual Info: CHA5093TCF 22-26GHz High Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description Main Features The monolithic microwave IC MMIC in the package is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications,

PTB23006U

Abstract: MLC718 SOT440A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PTB23006U Microwave power transistor Preliminary specification Supersedes data of December 1994 1997 Feb 19 Philips Semiconductors Preliminary specification Microwave power transistor FEATURES • Very high power gain • Diffused emitter ballasting resistors

Contextual Info: TOSHIBA MICROWAVE POWER GaAs MMIC TMD0507-2A MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • High Power Broadband Internally Matched PldB=33dBm at 5.1 to 7.2GHz ■ Hermetically Sealed Package High Gain GldB=22dB at 5.1 to 7.2GHz ABSOLUTE MAXIMUM RATINGS Ta=25°C

E 1007

Abstract: PTB23002U
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PTB23002U NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Very high power gain • Internal input prematching network

CLX34

Abstract: CLX34-00 CLX34-05 CLX34-10
Contextual Info: CLX34 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 10 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application

TMD1013-1-431

Contextual Info: MICROWAVE POWER MMIC AMPLIFIER TMD1013-1-431 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=33.0dBm at 9.5GHz to 12.0GHz n HIGH GAIN G1dB=25.0dB at 9.5GHz to 12.0GHz n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS Ta= 25°C

CLY35

Abstract: CLY35-00 CLY35-05 CLY35-10
Contextual Info: CLY35 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 4.5 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application

CLY38

Abstract: CLY38-00 CLY38-05 CLY38-10
Contextual Info: CLY38 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 4.2 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application

CLY32

Abstract: CLY32-00 CLY32-05 CLY32-10
Contextual Info: CLY32 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 6 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application

CLX32

Abstract: CLX32-00 CLX32-05 CLX32-10
Contextual Info: CLX32 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 12.5 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application

CLX27

Abstract: CLX27-00 CLX27-05 CLX27-10
Contextual Info: CLX27 HiRel X-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 15 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application

CLY29

Abstract: CLY29-00 CLY29-05 CLY29-10
Contextual Info: CLY29 HiRel C-Band GaAs Power-MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 8 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application

CLY29

Abstract: CLY29-00 CLY29-05 CLY29-10 GMW05880 IDp12
Contextual Info: CLY29. HiRel C-Band GaAs Power- MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 100 MHz to 8 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application

CLX27

Abstract: CLX27-00 CLX27-05 CLX27-10 GMW05880 049 01169
Contextual Info: CLX27. HiRel X- Band GaAs Power- MESFET • HiRel Discrete and Microwave Semiconductor • For professional power amplifiers • For frequencies from 500 MHz to 15 GHz • Hermetically sealed microwave power package • Low thermal resistance for high voltage application

TIM0910-20

Contextual Info: MICROWAVE POWER GaAs FET TIM0910-20 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER „ BROAD BAND INTERNALLY MATCHED P1dB=43.0dBm at 9.5GHz to 10.5GHz „ HIGH GAIN G1dB=7.0dB at 9.5GHz to 10.5GHz „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta= 25°°C

TMD1925-3

Contextual Info: MICROWAVE POWER MMIC AMPLIFIER TMD1925-3 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=35.0dBm at 1.9GHz to 2.5GHz n HIGH GAIN G1dB=29.0dB at 1.9GHz to 2.5GHz n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS Ta= 25°C