SOT440A Search Results

Contextual Info: Package outline Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT440A D A F 3 D1 B U1 q C b1 c 1 H U2 E1 A E w1 M A M B M p 2 Q w2 M C M b 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT A b

BP317

Abstract: LTE21025R marking code 439
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LTE21025R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 21 Philips Semiconductors Product specification NPN microwave power transistor LTE21025R FEATURES PINNING - SOT440A • Diffused emitter ballasting resistors provide excellent

417 - 162 TRANSISTOR

Abstract: 1273 transistor
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LTE42008R FEATURES PINNING - SOT440A • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR PIN • Gold metallization realizes very stable characteristics

sot440a

Contextual Info: PDF: 1999 Apr 16 Philips Semiconductors Package outline Flanged hermetic ceramic package; 2 mounting holes; 2 leads SOT440A D A F 3 D1 B U1 q C b1 c 1 H U2 E1 A E w1 M A M B M p 2 Q w2 M C M b 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions

LTE42012R

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LTE42012R NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 21 Philips Semiconductors Product specification NPN microwave power transistor LTE42012R FEATURES PINNING - SOT440A • Interdigitated structure provides high emitter efficiency

LTE42005S

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LTE42005S NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 21 Philips Semiconductors Product specification NPN microwave power transistor LTE42005S FEATURES PINNING - SOT440A • Diffused emitter ballasting resistors provide excellent

Contextual Info: PACKAGE OUTLINES Page SOTIOO 348 SOT122A 349 SOT422A 350 SOT423A 351 SOT437A 352 SOT439A 353 SOT440A 354 SOT441A 355 SOT442A 356 SOT443A 357 SOT445A 358 SOT445B 359 SOT446A 360 SOT447A 361 SOT448A 362 SOT469A 363 Philips Semiconductors Microwave transistors

SC19a

Abstract: SC19 LTE21009R BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LTE21009R NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor LTE21009R FEATURES PINNING - SOT440A

Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LTE21009R FEATURES PINNING - SOT440A • Diffused emitter ballasting resistors PIN • Self-aligned process entirely ion implanted and gold sandwich metallization • optimum temperature profile

mga028

Abstract: 339 marking code transistor MGA02 BP317 PTC4001T SC15 SOT440A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PTC4001T NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor

MSA103

Abstract: PERMITTIVITY* 2.55 PTB23001X PTB23003X PTB23005X SC15 MSA112
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PTB23001X; PTB23003X; PTB23005X NPN microwave power transistors Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification PTB23001X; PTB23003X;

Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor PTC4001T FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Microwave performance up to Th = 25 °C in an oscillator circuit up to 3 GHz.

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

865 RF transistor

Abstract: RF Transistor reference "RF Power Modules" microwave transistor 03 Power Transistor MS-012AA SOT391A EU2A sot147a 1117 sot223
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Package outlines RF & Microwave Power Transistors and RF Power Modules 1998 Feb 17 File under Discrete Semiconductors, SC19a Philips Semiconductors RF & Microwave Power Transistors and RF Power Modules Package outlines SO8: plastic small outline package; 8 leads; body width 3.9 mm

mga028

Abstract: TRANSISTOR NPN 5GHz PTC4001T
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor PTC4001T FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR Microwave performance up to Th = 25 °C in an oscillator circuit up to 3 GHz.

Philips Semiconductors Selection Guide

Abstract: LTE42005S BLS2731-10
Contextual Info: SELECTION GUIDE Page Pulsed power transistors for radar 8 Pulsed power transistors for avionics 8 Linear power transistors 9 CW power transistors 10 Oscillator power transistors 10 Philips Semiconductors Microwave transistors Selection guide PULSED POWER TRANSISTORS FOR RADAR

EUROFARAD capacitor

Abstract: erie 1250-003 EUROFARAD cec EUROFARAD ceramic capacitor
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor MTB10010U FEATURES QUICK REFERENCE DATA • Input prematching cell allows an easier design of circuits Microwave performance for Tmb = 25 °C in a common base class C narrowband amplifier.

274 transistor

Abstract: transistor c 5855
Contextual Info: Philips Semiconductors Preliminary specification Microwave power transistor FEATURES • Very high power gain • Diffused emitter ballasting resistors improve ruggedness • Interdigitated emitter-base structure • Gold metallization with barrier layer to prevent electromigration and

E 1007

Abstract: PTB23002U
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PTB23002U NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Very high power gain • Internal input prematching network

MSA117

Abstract: PTB32001X PTB32003X PTB32005X
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PTB32001X; PTB32003X; PTB32005X NPN microwave power transistors Product specification Supersedes data of November 1994 1997 Feb 18 Philips Semiconductors Product specification PTB32001X; PTB32003X; PTB32005X NPN microwave power transistors

MCD628

Abstract: LTE42008R SC15 transistor marking code 1325 ss 297 transistor
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LTE42008R FEATURES PINNING - SOT44QA • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR PIN 1 collector • Gold metallization realizes very stable characteristics

transistor top 222

Abstract: LTE21025R SC15 marking code 439
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LTE21025R FEATURES PINNING - SOT44QA • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR PIN • Self-aligned process entirely ion implanted

142 transistor

Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LTE42012R FEATURES PINNING - SOT44QA • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR

Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LTE21015R FEATURES PINNING - SOT44QA • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR