HIGH POWER NPN UHF TRANSISTOR Search Results

2SC1365

Abstract: NE741 2sc1252 74113 NE74100
Contextual Info: NE74100 NE74113 NE74114 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: fT = 1.7 GHz The NE741 series of NPN epitaxial silicon transistors is designed for wide bandwidth UHF and VHF amplifiers. Its low

TP3400

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3400 The RF Line UHF Linear Power Transistor 'C = 400 mA UHF LINEAR TRANSISTOR NPN SILICON The TP3400 is a NPN transistor gold metallized for reliability. The transition frequency of 3 GHz make this transistor a high gain — high output

Contextual Info: NPN MEDIUM POWER UHF-VHF TRANSISTOR NE74000 NE74014 FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: The NE740 series of NPN silicon transistors is designed for wide bandwidth VHF and UHF amplifiers. Excellent intermodulation characteristics and low noise make the series

capacitor 2200 uF

Abstract: philips resistor 2322 156 BLT82 UHF TRANSISTOR 2322 156 philips SMD ic catalogue 200B BC817 TRANSISTOR SMD L3 SMD TRANSISTOR L6
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLT82 UHF power transistor Product specification 1996 Feb 05 Philips Semiconductors Product specification UHF power transistor BLT82 FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a

Contextual Info: NPN MEDIUM POWER UHF-VHF TRANSISTOR NE74000 NE74014 FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: fT = 2.2 GHz The NE740 series of NPN silicon transistors is designed for wide bandwidth VHF and UHF amplifiers. Excellent intermodulation characteristics and low noise make the series

BLV97CE

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV97CE UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor BLV97CE FEATURES DESCRIPTION • Internal input matching to achieve high power gain NPN silicon planar epitaxial transistor in a SOT171

BLV98CE

Abstract: MDA459 MDA456
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV98CE UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor BLV98CE FEATURES DESCRIPTION • Internal input matching to achieve high power gain NPN silicon planar epitaxial transistor in an SOT-171

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFG10W/X UHF power transistor Product specification 1995 Sep 22 NXP Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin

Contextual Info: ADVANCE INFORMATION MMBTH10 NPN SURFACE MOUNT VHF/UHF TRANSISTOR POWER SEMICONDUCTOR Features • • • Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators High Current Gain Bandwidth Product Ideal for Mixer and RF Amplifier Applications

BC548 TRANSISTOR REPLACEMENT

Abstract: transistor BC548 Philips Capacitor RT5880 BC548 transistor bc548 bp HE bc548 BC548 transistor bc548 equivalent MBG431
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor Product specification 1995 Sep 22 NXP Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4989 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC4989 is a silicon NPN epitaxial planar type transistor Dimension in mm specifically designed for high power amplifiers in UHF band. FEATURES • High power output and high gain: P o^65W , GpeS5.1dB,

transistor 5d

Abstract: transistor 1P t
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4989 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC4989 is a silicon NPN epitaxial planar type transistor Dimension in mm specifically designed for high power amplifiers in UHF band. R1 FEATURES • High power output and high gain: P o^65W , GpeS5.1dB,

uhf amp circuit diagrams

Abstract: marking JY 2095 FL 2SC3770 JY marking transistor 2095A marking u4j
Contextual Info: Ordering number :EN2095A ;_ 2SC3770 No.2095A NPN Epitaxial Planar Silicon Transistor UHF, VHF Oscillator, Mixer, HF Amp Applications Applications . UHF/VHF frequency converters, local oscillators, HF amplifiers Features . High power gain: PG=15dB typ f=0.4GHz .

2SC3772

Abstract: 2SC4403 ITR06730 ITR06731 ITR06732 ITR06733 marking LY
Contextual Info: Ordering number:ENN2756 NPN Epitaxial Planar Silicon Transistor 2SC4403 VHF/UHF Local Oscillator Applications Applications Package Dimensions • VHF/UHF oscillators. unit:mm 2059B Features [2SC4403] 0.15 0.2 0.425 · High cutoff frequency : fT=3.0GHz typ · High power gain : MAG=12dB typ f=0.9GHz

BLH*3355

Abstract: BLH3355 blh335 uhf amplifier design Transistor NPN planar RF transistor high power npn UHF transistor
Contextual Info: BLH3355 NPN EPITAXIAL SILICON RF TRANSISTOR CHIP BLH3355 Description NPN epitaxial silicon RF transistor for microwave low-noise amplification Features Low noise and high gain bandwidth product High power gain Applications UHF / VHF wide band amplifier Structure

air variable capacitor

Abstract: POWER TRANSISTOR 2sC3102 2sc3102 transistor CAPACITOR MURATA tta series 2SC3102 2SC310 mica capacitor mica material capacitor murata pir
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3102 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC3102 is a silicon NPN epitaxial planar type transistor specifi­ OUTLINE DRAWING cally designed for high power amplifiers applications in UHF band. Dimensions in mm R1 FEATURES

2SC3771

Abstract: ITR05896 ITR05897 ITR05898 ITR05899 ITR05900
Contextual Info: Ordering number:ENN1944B NPN Epitaxial Planar Silicon Transistor 2SC3771 UHF, VHF Oscillator Mixer, HF Amplifier Applications Applications Package Dimensions • UHF/VHF frequency converters, local oscillators, HF amplifiers. unit:mm 2018B [2SC3771] · High power gain : PG=10dB typ f=0.9GHz .

Contextual Info: Ordering number:ENN1944B NPN Epitaxial Planar Silicon Transistor 2SC3771 UHF, VHF Oscillator Mixer, HF Amplifier Applications Applications Package Dimensions • UHF/VHF frequency converters, local oscillators, HF amplifiers. unit:mm 2018B [2SC3771] · High power gain : PG=10dB typ f=0.9GHz .

2SC3770

Abstract: ITR05889 ITR05890 ITR05891 ITR05892 ITR05893 marking JY
Contextual Info: Ordering number:ENN2095A NPN Epitaxial Planar Silicon Transistor 2SC3770 UHF, VHF Oscillator Mixer, HF Amplifier Applications Applications Package Dimensions • UHF/VHF frequency converters, local oscillators, HF amplifiers. unit:mm 2018B [2SC3770] · High power gain : PG=15dB typ f=0.4GHz .

2SC107

Abstract: 2SC1070
Contextual Info: NEC NPN SILICON TRANSISTORS ELECTRON DEVICE DESCRIPTION 2SC1070 1 , 2SC1070(2) The 2SC1070(1) is specifically designed for UHF RF amplifier applications. The 2SC1070(2> is specifically designed fo r UHF mixer applications. They feature high power gain, low noise

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3379 NPN EPITAXIAL PLANAR TY P E DESCRIPTION OUTLINE DRAWING Dim ensions in mm 2SC3379 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for UHF power amplifier applications. FEATURES • High power gain: G p eè6.7dB

2SC3772

Abstract: 2SC4403
Contextual Info: Ordering number : EN 2756 _ 2 S C 4 4 0 3 NPN Epitaxial Planar Silicon Transistor VHF/UHF Local Oscillator Applications Applications • VHF/UHF oscillators Features • High cutoff frequency : fr = 3.0GHz typ : MAG= 12dB typ f=0.9GHz •High power gain

2SC1070

Abstract: s parameters RF NPN POWER TRANSISTOR 100MHz Tma UHF
Contextual Info: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SC1070 B RF AMP. FOR UHF TV TUNER NPN SILICON TRANSISTOR DISK MOLD The 2SC1070(B) is specifically designed fo r UHF RF amplifier PACKAGE DIMENSIONS (Unit : mm) applications. The 2SC1070(B) features high power gain, low

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3102 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION 2SC3102 is a silicon NPN epitaxial planar type transistor specifi­ OUTLINE DRAWING cally designed fo r high power amplifiers applications in UHF band. Dim ensions in mm R1 FEATURES