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    HIGH POWER NPN UHF TRANSISTOR Search Results

    HIGH POWER NPN UHF TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    HIGH POWER NPN UHF TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    capacitor 2200 uF

    Abstract: philips resistor 2322 156 BLT82 UHF TRANSISTOR 2322 156 philips SMD ic catalogue 200B BC817 TRANSISTOR SMD L3 SMD TRANSISTOR L6
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT82 UHF power transistor Product specification 1996 Feb 05 Philips Semiconductors Product specification UHF power transistor BLT82 FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a


    Original     		PDF BLT82 OT96-1 MAM227 capacitor 2200 uF philips resistor 2322 156 BLT82 UHF TRANSISTOR 2322 156 philips SMD ic catalogue 200B BC817 TRANSISTOR SMD L3 SMD TRANSISTOR L6

    BLV97CE

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV97CE UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor BLV97CE FEATURES DESCRIPTION • Internal input matching to achieve high power gain NPN silicon planar epitaxial transistor in a SOT171


    Original     		PDF BLV97CE OT171 BLV97CE

    BLV98CE

    Abstract: MDA459 MDA456
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV98CE UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor BLV98CE FEATURES DESCRIPTION • Internal input matching to achieve high power gain NPN silicon planar epitaxial transistor in an SOT-171


    Original     		PDF BLV98CE OT-171 BLV98CE MDA459 MDA456

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFG10W/X UHF power transistor Product specification 1995 Sep 22 NXP Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin


    Original     		PDF BFG10W/X OT343N MBK523 R77/01/pp11

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION MMBTH10 NPN SURFACE MOUNT VHF/UHF TRANSISTOR POWER SEMICONDUCTOR Features • • • Designed for VHF/UHF Amplifier Applications and High Output VHF Oscillators High Current Gain Bandwidth Product Ideal for Mixer and RF Amplifier Applications


    Original     		PDF MMBTH10 OT-23 OT-23, MIL-STD-202, 100MHz, DS31031

    BC548 TRANSISTOR REPLACEMENT

    Abstract: transistor BC548 Philips Capacitor RT5880 BC548 transistor bc548 bp HE bc548 BC548 transistor bc548 equivalent MBG431
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor Product specification 1995 Sep 22 NXP Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin


    Original     		PDF BFG10W/X OT343N MBK523 R77/01/pp11 BC548 TRANSISTOR REPLACEMENT transistor BC548 Philips Capacitor RT5880 BC548 transistor bc548 bp HE bc548 BC548 transistor bc548 equivalent MBG431

    2SC3772

    Abstract: 2SC4403 ITR06730 ITR06731 ITR06732 ITR06733 marking LY
    Text: Ordering number:ENN2756 NPN Epitaxial Planar Silicon Transistor 2SC4403 VHF/UHF Local Oscillator Applications Applications Package Dimensions • VHF/UHF oscillators. unit:mm 2059B Features [2SC4403] 0.15 0.2 0.425 · High cutoff frequency : fT=3.0GHz typ · High power gain : MAG=12dB typ f=0.9GHz


    Original     		PDF ENN2756 2SC4403 2059B 2SC4403] 2SC4403applied 2SC3772 2SC4403 ITR06730 ITR06731 ITR06732 ITR06733 marking LY

    2SC3772

    Abstract: 2SC4403 marking LY
    Text: Ordering number:EN2756 NPN Epitaxial Planar Silicon Transistor 2SC4403 VHF/UHF Local Oscillator Applications Applications Package Dimensions • VHF/UHF oscillators. unit:mm 2059B Features [2SC4403] 0.15 0.2 0.425 · High cutoff frequency : fT=3.0GHz typ · High power gain : MAG=12dB typ f=0.9GHz


    Original     		PDF EN2756 2SC4403 2059B 2SC4403] 2SC4403applied 2SC3772 2SC4403 marking LY

    BLH*3355

    Abstract: BLH3355 blh335 uhf amplifier design Transistor NPN planar RF transistor high power npn UHF transistor
    Text: BLH3355 NPN EPITAXIAL SILICON RF TRANSISTOR CHIP BLH3355 Description NPN epitaxial silicon RF transistor for microwave low-noise amplification Features Low noise and high gain bandwidth product High power gain Applications UHF / VHF wide band amplifier Structure


    Original     		PDF BLH3355 BLH3355) BLH*3355 BLH3355 blh335 uhf amplifier design Transistor NPN planar RF transistor high power npn UHF transistor

    2SC3771

    Abstract: ITR05896 ITR05897 ITR05898 ITR05899 ITR05900
    Text: Ordering number:ENN1944B NPN Epitaxial Planar Silicon Transistor 2SC3771 UHF, VHF Oscillator Mixer, HF Amplifier Applications Applications Package Dimensions • UHF/VHF frequency converters, local oscillators, HF amplifiers. unit:mm 2018B [2SC3771] · High power gain : PG=10dB typ f=0.9GHz .


    Original     		PDF ENN1944B 2SC3771 2018B 2SC3771] 2SC3771 ITR05896 ITR05897 ITR05898 ITR05899 ITR05900

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN1944B NPN Epitaxial Planar Silicon Transistor 2SC3771 UHF, VHF Oscillator Mixer, HF Amplifier Applications Applications Package Dimensions • UHF/VHF frequency converters, local oscillators, HF amplifiers. unit:mm 2018B [2SC3771] · High power gain : PG=10dB typ f=0.9GHz .


    Original     		PDF ENN1944B 2SC3771 2018B 2SC3771]

    2SC3770

    Abstract: ITR05889 ITR05890 ITR05891 ITR05892 ITR05893 marking JY
    Text: Ordering number:ENN2095A NPN Epitaxial Planar Silicon Transistor 2SC3770 UHF, VHF Oscillator Mixer, HF Amplifier Applications Applications Package Dimensions • UHF/VHF frequency converters, local oscillators, HF amplifiers. unit:mm 2018B [2SC3770] · High power gain : PG=15dB typ f=0.4GHz .


    Original     		PDF ENN2095A 2SC3770 2018B 2SC3770] 2SC3770 ITR05889 ITR05890 ITR05891 ITR05892 ITR05893 marking JY

    2SC1365

    Abstract: NE741 2sc1252 74113 NE74100
    Text: NE74100 NE74113 NE74114 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: fT = 1.7 GHz The NE741 series of NPN epitaxial silicon transistors is designed for wide bandwidth UHF and VHF amplifiers. Its low


    OCR Scan     		PDF NE74100 NE74113 NE74114 NE741 E74100) NE74114 E74100, NE74100 2SC1365 2sc1252 74113

    TP3400

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3400 The RF Line UHF Linear Power Transistor 'C = 400 mA UHF LINEAR TRANSISTOR NPN SILICON The TP3400 is a NPN transistor gold metallized for reliability. The transition frequency of 3 GHz make this transistor a high gain — high output


    OCR Scan     		PDF TP3400 TP3400

    Untitled

    Abstract: No abstract text available
    Text: NPN MEDIUM POWER UHF-VHF TRANSISTOR NE74000 NE74014 FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: fT = 2.2 GHz The NE740 series of NPN silicon transistors is designed for wide bandwidth VHF and UHF amplifiers. Excellent intermodulation characteristics and low noise make the series


    OCR Scan     		PDF NE74000 NE74014 NE740 NE90115 quali16

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4989 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC4989 is a silicon NPN epitaxial planar type transistor Dimension in mm specifically designed for high power amplifiers in UHF band. FEATURES • High power output and high gain: P o^65W , GpeS5.1dB,


    OCR Scan     		PDF 2SC4989 2SC4989 520MHz, 520MHz

    transistor 5d

    Abstract: transistor 1P t
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC4989 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC4989 is a silicon NPN epitaxial planar type transistor Dimension in mm specifically designed for high power amplifiers in UHF band. R1 FEATURES • High power output and high gain: P o^65W , GpeS5.1dB,


    OCR Scan     		PDF 2SC4989 2SC4989 520MHz, 520MHz transistor 5d transistor 1P t

    uhf amp circuit diagrams

    Abstract: marking JY 2095 FL 2SC3770 JY marking transistor 2095A marking u4j
    Text: Ordering number :EN2095A ;_ 2SC3770 No.2095A NPN Epitaxial Planar Silicon Transistor UHF, VHF Oscillator, Mixer, HF Amp Applications Applications . UHF/VHF frequency converters, local oscillators, HF amplifiers Features . High power gain: PG=15dB typ f=0.4GHz .


    OCR Scan     		PDF 2SC3770 uhf amp circuit diagrams marking JY 2095 FL 2SC3770 JY marking transistor 2095A marking u4j

    air variable capacitor

    Abstract: POWER TRANSISTOR 2sC3102 2sc3102 transistor CAPACITOR MURATA tta series 2SC3102 2SC310 mica capacitor mica material capacitor murata pir
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3102 NPN EPITAXIAL PLANAR TYPE DESCRIPTION 2SC3102 is a silicon NPN epitaxial planar type transistor specifi­ OUTLINE DRAWING cally designed for high power amplifiers applications in UHF band. Dimensions in mm R1 FEATURES


    OCR Scan     		PDF 2SC3102 2SC3102 PoS60W, 520MHz, 520MHz. 520MHz) 100pF to10pF air variable capacitor POWER TRANSISTOR 2sC3102 2sc3102 transistor CAPACITOR MURATA tta series 2SC310 mica capacitor mica material capacitor murata pir

    2SC107

    Abstract: 2SC1070
    Text: NEC NPN SILICON TRANSISTORS ELECTRON DEVICE DESCRIPTION 2SC1070 1 , 2SC1070(2) The 2SC1070(1) is specifically designed for UHF RF amplifier applications. The 2SC1070(2> is specifically designed fo r UHF mixer applications. They feature high power gain, low noise


    OCR Scan     		PDF 2SC1070 2SC107

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3379 NPN EPITAXIAL PLANAR TY P E DESCRIPTION OUTLINE DRAWING Dim ensions in mm 2SC3379 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for UHF power amplifier applications. FEATURES • High power gain: G p eè6.7dB


    OCR Scan     		PDF 2SC3379 2SC3379 520MHz,

    2SC3772

    Abstract: 2SC4403
    Text: Ordering number : EN 2756 _ 2 S C 4 4 0 3 NPN Epitaxial Planar Silicon Transistor VHF/UHF Local Oscillator Applications Applications • VHF/UHF oscillators Features • High cutoff frequency : fr = 3.0GHz typ : MAG= 12dB typ f=0.9GHz •High power gain


    OCR Scan     		PDF 2SC4403 2SC4403-applied 2SC3772 2SC4403

    2SC1070

    Abstract: s parameters RF NPN POWER TRANSISTOR 100MHz Tma UHF
    Text: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SC1070 B RF AMP. FOR UHF TV TUNER NPN SILICON TRANSISTOR DISK MOLD The 2SC1070(B) is specifically designed fo r UHF RF amplifier PACKAGE DIMENSIONS (Unit : mm) applications. The 2SC1070(B) features high power gain, low


    OCR Scan     		PDF 2SC1070 s parameters RF NPN POWER TRANSISTOR 100MHz Tma UHF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3102 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION 2SC3102 is a silicon NPN epitaxial planar type transistor specifi­ OUTLINE DRAWING cally designed fo r high power amplifiers applications in UHF band. Dim ensions in mm R1 FEATURES


    OCR Scan     		PDF 2SC3102 2SC3102 520MHz, 520MHz. 520MHz) 100pF to10pF to20pF